Electronic Components, Technology and Materials
Department of Microelectronics

dr. V. Milovanovic

PhD student
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

PhD thesis (Jul 2010): Advanced breakdown modeling for solid-state circuit design
Promotor: Lis Nanver, Ramses van der Toorn

Expertise: physical modeling of advanced breakdown phenomena in semiconductor devices

Biography

Vladimir Milovanovic graduated in Electrical Engineer from the Faculty of Electrical Engineering, University of Belgrade. He joined DIMES, TU Delft in March 2006, where he started his work towards the Ph.D. degree. His research interests include physical modeling of advanced breakdown (both avalanche and tunneling) phenomena in semiconductor devices.

Publications

  1. RF small signal avalanche for bipolar transistor circuit design: Characterization, modeling and repercussions
    V. Milovanovic; R. R. van der Toorn Pijper;
    Microelectronics Reliability,
    Volume 51, Issue 3, pp. 560-565, 2011. DOI 10.1016/j.microrel.2010.10.006.

  2. C-V profiling of ultra-shallow junctions using step like background profiles
    M. Popadic; V. Milovanovic; C. Xu; F. Sarubbi; L.K. Nanver;
    Solid-state electronics,
    Volume 54, Issue 9, pp. 890-896, 2010.

  3. Advanced breakdown modeling for solid-state circuit design
    V. Milovanovic;
    PhD thesis, Delft University of Technology, Jul. 2010. ISBN 978-90-8570-583-3; Promotors: prof. L.K. Nanver. R. van der Toorn.

  4. Compact Model of Zener tunneling Current in Bipolar Transistors featuring a Smooth Transition to Zero Forward Bias Current
    V. Milovanovic; R. van der Toorn; P. Huphries; D. Vidal; A. Vafanejad;
    In Proc. of Bipolar/BiCMOS Circuits and Technology Meeting,
    Capri, Italy, IEEE, pp. 99-102, 2009.
    document

  5. Behavioural Biometrics Hardware Based on Bioinformatics Matching
    S. Bojanic; V. Povic; G. Caffarena; V. Milovanovic; C. Carrers; J. Popovic;
    In Proc. of 3rd International Conference on Complex, Intelligent and Software Intensive Systems (CISIS-2009),
    Fukuoka, Japan: IEEE, pp. 171-178, 2009.

  6. Statistical Analysis of Diode Ideal Current Parameter Extraction Procedures
    V. Milovanovic; R. van der Toorn;
    In Proc. 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE 2009),
    Veldhoven, The Netherlands, pp. 163-166, 2009.

  7. RF Small Signal Avalanche Characterization and Repercussions on Bipolar Transistor Circuit Design
    Vladimir Milovanovic; Ramses van der Toorn;
    In Proc. IEEE EUROCON 2009,
    St. Petersburg, Russia, IEEE, pp. 230-233, 2009.
    document

  8. Modeling Advanced Avalanche Effects for Bipolar Transistor Circuit Design
    Vladimir Milovanovic; Ramses van der Toorn;
    In Proc. 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE),
    Veldhoven, The Netherlands, Nov. 2008.

  9. An Efficient Sectionalized Modeling Approach for Introduction of @Distributed Avalanche Effects in Bipolar Circuit Design
    V. Milovanovic; S. Mijalkovic;
    In Proc. NANOTEC 2007,
    Santa Clara, CA, 2007.

BibTeX support

Last updated: 16 Jun 2014

Vladimir Milovanovic

Alumnus