dr. L. Qi

1. Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection
   Jian Zhang; Robert Sokolovskij; Ganhui Chen; Yumeng Zhu; Yongle Qi; Xinpeng Lin; Wenmao Li; GuoQi Zhang; Yu-Long Jiang; Hongyu Yu;
   Sensors and Actuators, B: Chemical,
   Volume 280, pp. 138-143, 2019. DOI: 10.1016/j.snb.2018.10.052

2. Au-based and Au-free Ohmic Contacts to AlGaN/GaN Structures on Silicon or Sapphire Substrates
   Wenmao Li; Jian Zhang; Robert Sokolovskij; Yumeng Zhu; Yongle Qi; Xinpeng Lin; Jingyi Wu; Lingli Jiang; Hongyu Yu;
   In 18th International Workshop on Junction Technology,
   2018.

3. Interface Properties of Group-III-Element Deposited-Layers Integrated in High-Sensitivity Si Photodiodes
   Lin Qi;
   PhD thesis, Delft University of Technology, 2016.

4. Optimization of LED light spectrum to enhance colorfulness of illuminated objects with white light constraints
   H. Wu; J. Dong; G. Qi; GuoQi Zhang;
   Journal of the Optical Society of America A,
   Volume 32, Issue 7, pp. 1262-1270, 2015.

5. Robust UV/VUV/EUV PureB Photodiode Detector Technology with High CMOS Compatibility
   L.K. Nanver; L. Qi; V. Mohammadi; K.R.M. Mok; W.B. de Boer; N. Golshani; A. Sammak; T.L.M. Scholtes; A. Gottwald; U. Kroth; F. Scholze;
   Journal of Selected Topics in Quantum Electronics,
   Volume 20, Issue 6, pp. pp.1-11, 2014.

6. A 270�1 Ge-on-Si photodetector array for sensitive infrared imaging
   Sammak, A; Aminian, M; Lin Qi; Charbon, E; Nanver, LK;
   In Optical Sensing and Detection III Vol. 9141. Proceedings of SPIE- International Society for Optical Engineering,
   pp. 1-7, 2014.

7. VUV/Low-Energy-Electron Si Photodiodes with Post-Metal 400�C PureB Deposition
   V. Mohammadi; L. Qi; N. Golshani; K. R. C. Mok; W. B. de Boer; A. Sammak; J. J. Derakhshandeh. van der Cingel; L. K. Nanver;
   IEEE Electron Device Letters,
   Volume 34, Issue 12, 2013. DOI 10.1109/LED.2013.2287221.

8. Lateral-transistor test structures for evaluating the effectiveness of surface doping techniques
   L. Qi; G. Lorito; L.K. Nanver;
   IEEE Transactions on Semiconductor Manufacturing,
   Volume 25, Issue 4, pp. 581-588, 2012. DOI 10.1109/TSM.2012.2206834.

9. Epitaxial growth of large-area p+n diodes at 400 �C by aluminum-induced crystallization
   A. Sakic; L. Qi; T.L.M. Scholtes; J. van der Cingel; L.K. Nanver;
   In Proc. of the 42th European Solid-State Device Research Conference (ESSDERC 2012),
   Bordeaux, France, pp. 145-148, Sept. 2012. ISBN 978-1-4673-1707-8; DOI 10.1109/ESSDERC.2012.6343354.

10. Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices
    L.K. Nanver; A. Sammak; V. Mohammadi; K.R.C. Mok; L. Qi; A. Sakic; N. Golshani; J. Derakhshandeh; T.M.L. Scholtes; W.D. de Boer;
    In ECS Trans. 2012: 27th Symposium on Microelectronics Technology and Devices (SBMicro2012),
    Brazil, Brasilia, pp. 25-33, Aug. 2012. DOI 10.1149/04901.0025ecst.

11. Applications of PureB and PureGaB ultrashallow junction technologies
    L.K. Nanver; A. _akic; V. Mohammadi; J. Derakhshandeh; K.R.C. Mok; L. Qi; N. Golshani; T.M.L. Scholtes; W.B. de Boer;
    In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSCT 2012),
    Xi'an, pp. 303-306., Oct. 2012.
    document

12. Simple method to evaluate minority carrier injection levels in schottky diodes
    L. Qi; G. Lorito; L.K. Nanver;
    In Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011),
    Veldhoven, The Netherlands, pp. 1-3, Nov. 2011.

13. A CMOS compatible Ge-on-Si APD operating in proportional and geiger modes at infrared wavelengths
    A. Sammak; M. Aminian; L. Qi; W.B. de Boer; E. Charbon; L.K. Nanver;
    In International Electron Device Meeting (IEDM 2011),
    Washington DC, Dec. 2011.

14. Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing.
    G. Lorito; L. Qi; L.K. Nanver;
    In 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010),
    Shanghai, China, pp. 972-974, 2010.
    document

15. Chemical vapor deposition of Ga dopants for fabricating ultrashallow pn junctions at 400
    A. Sammak; L. Qi; W.B. de Boer; L.K. Nanver;
    In 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010),
    Shanghai, China, pp. 969-971, 2010.
    document

16. Chemical Vapor Deposition of Gallium on Silicon and SiO2. In PJ French
    A. Sammak; W.B. de Boer; L.K. Nanver; L. Qi; G. Lorito;
    In Proc. of SAFE 2009,
    Veldhoven, The Netherlands, pp. 538-541, 2009.
    document

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