dr. A. Sakic

PhD student
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

PhD thesis (Nov 2012): Silicon Technology for Integrating High-Performance Low-Energy Electron Photodiode Detectors
Promotor: Lis Nanver

Expertise: On-chip detection electronics for low energy charged-particles

Biography

Agata Sakic was born in Split, Croatia, in 1985. She received the M.Sc. degree in Electrical Engineering, University of Zagreb, Croatia in 2008. The same year she joined DIMES Institute of Delft University of Technology as a Ph.D. student in the Silicon Device Integration Group of Prof. Lis K. Nanver. Her present research focuses on development of on-chip detection electronics for low energy charged-particles. In 2010 she entered the prestigious Huygens Scholarship Programme.

Publications

  1. Silicon Drift Detectors for the detection of x-rays down to energies as low as 100 eV
    Negin Golshani; Jaber Derakhshandeh; Agata Sakic; Lis Nanver;
    In Micronano conference,
    Ede, The Netherlands, 2013.

  2. High-efficiency silicon photodiode detector for sub-keV electron microscopy
    A. Sakic; G. van Veen; K. Kooijman; P. Vogelsang; T.L.M. Scholtes; W.B. de Boer; J. Derakhshandeh; W.H.A. Wien; S. Milosavljevic; L.K. Nanver;
    IEEE Transactions on Electron Devices,
    Volume 59, Issue 10, pp. 2707-2714, Oct. 2012. DOI 10.1109/TED.2012.2207960.

  3. Epitaxial growth of large-area p+n diodes at 400 �C by aluminum-induced crystallization
    A. Sakic; L. Qi; T.L.M. Scholtes; J. van der Cingel; L.K. Nanver;
    In Proc. of the 42th European Solid-State Device Research Conference (ESSDERC 2012),
    Bordeaux, France, pp. 145-148, Sept. 2012. ISBN 978-1-4673-1707-8; DOI 10.1109/ESSDERC.2012.6343354.

  4. Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions
    T. Knezevic; T. Suligoj; A. Sakic; L.K. Nanver;
    In Proc. of the 35th International Convention MIPRO 2012,
    Opatija, Croatia, pp. 36-41, May 2012. ISBN 978-1-4673-2577-6.

  5. Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices
    L.K. Nanver; A. Sammak; V. Mohammadi; K.R.C. Mok; L. Qi; A. Sakic; N. Golshani; J. Derakhshandeh; T.M.L. Scholtes; W.D. de Boer;
    In ECS Trans. 2012: 27th Symposium on Microelectronics Technology and Devices (SBMicro2012),
    Brazil, Brasilia, pp. 25-33, Aug. 2012. DOI 10.1149/04901.0025ecst.

  6. Silicon technology for integrating high-performance low-energy electron photodiode detector
    A. Sakic;
    PhD thesis, Delft University of Technology, Nov. 2012. ISBN 978-94-6203-260-6; Promotor: prof.dr. L.K. Nanver.

  7. Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes
    A. Sakic; T.L.M. Scholtes; W. de Boer; N. Golshani; J. Derakhshandeh; L.K. Nanver;
    Materials,
    Volume 4, Issue 12, pp. 2092-2107, Dec. 2011. DOI 10.3390/ma4122092.

  8. On the uniformity of pure-boron-layer depositions
    V. Mohammadi; W.D. de Boer; T.L.M. Scholtes; A. Sakic; C. Heerkens; L.K. Nanver;
    In Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011),
    Veldhoven, The Netherlands, pp. 73-75, Nov. 2011.

  9. Radiation Detector
    Lis K. Nanver; T. Ludovicus; M. Scholtes; Agata Sakic; C. Sander Kooijman; Gerard Nicolaas Anne Van Veen;
    Patent application, 2011.

  10. Ultrashallow junction silicon photdiodes for detection of low energy electrons
    A. Sakic; L.K. Nanver; T.L.M. Scholtes; C.T.H. Heerkens; G. van Veen; K. Kooijman; P. Vogelsang;
    In STW-SAFE2010 Conference Proceeding,
    Veldhoven, pp. 150-153, 2010.

  11. The influence of stacking faults on the leakage current of B-layer p+n diodes.
    Golshani; N; W.B. de Boer; T.L.M. Scholtes; A. Sakic; L.K. Nanver;
    In Proceedings of STW-SAFE 2010,
    Veldhoven, Nederland, pp. 81-84, 2010.

  12. Silicon Photodiodes for High-Efficiency Low-Energy Electron Detection
    Agata Sakic; Lis K. Nanver; T. L. M. Scholtes; Carel Th. H. Heerkens; Gerard van Veen; Kees Kooijman; Patrick Vogelsang;
    In Proceedings of IEEE 40th European Solid-State Device Research Conference (ESSDERC 2010),
    Seville, Spain, pp. 102-105, Sep. 2010.

  13. Characterization of amorphous boron layers as diffusion barrier for pure aluminium
    Agata Sakic; Vladimir Jovanovic; Parastoo Maleki; Tom L.M. Scholtes; Silvana Milosavljevic; Lis K. Nanver;
    In MIPRO 2010 International Conference,
    Opatija, Croatia, pp. 52-55, May 2010.

  14. Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator
    Agata Sakic; Yann Civale; Lis K. Nanver; Cleber Biasotto; Vladimir Jovanovic;
    In MRS Spring Meeting Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology,
    San Francisco, Apr. 2010.

  15. Versatile Silicon Photodiode Detector Technology for Scanning Electron Microscopy with High-Efficiency Sub-5 keV Electron Detection
    A. Sakic; L. K. Nanver; G. van Veen; K. Kooijman; P. Vogelsang; T. L.M. Scholtes; W. de Boer; W. H. A. Wien; S. Milosavljevic; C. Th. H. Heerkens; T. Kne_evi_; I. Spee;
    In International Electron Devices Meeting (IEDM),
    San Francisco, CA, 2010.

  16. Pure-Boron Chemical-Vapor-Deposited Layers: a New Material for Silicon Device Processing
    L.K. Nanver; T. L. M. Scholtes; F. Sarubbi; W.B. de Boer; G. Lorito; A. Sakic; S. Milosavljevic; C. Mok; L. Shi; S. Nihtianov; K. Buisman;
    In 18th Annual Conference on Advanced Thermal Processing of Semiconductors-RTP 2010,
    Gainesville, FL, Sep. 2010.

  17. New Solid State Detector Design for Ultra-Sensitive Back-Scattered Electron Detection
    Ingo Gestmann; Kees Kooijman; Agata Sakic; Lis Nanver; Gerard van Veen;
    In 17th International Microscopy Congress (IMC17),
    Rio de Janeiro, Brazil, Sep. 2010.

  18. Application of amorphous boron layer as diffusion barrier for pure aluminium
    A. Sakic; G. Lorito; F. Sarubbi; T.L.M. Scholtes; J. van der Cingel; L.K. Nanver;
    In Proc. of SAFE 2009,
    Veldhoven, The Netherlands, pp. 112-115, 2009.
    document

  19. Influence of Scaling and Source/Drain Series Resistance on the Characteristics of Ultra-Thin Body FinFETs
    A. Sakic; M. Poljak; V. Jovanovic; T. Suligoj;
    In Proceedings of the 31st International Convention MIPRO,
    Zagreb, pp. 84-89, 2008.
    document

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Last updated: 21 Jul 2020

Agata Sakic

Alumnus