Ryoichi Ishihara
Publications
- Carbon Nanotube Array: Scaffolding Material for Opto, Electro, Thermo, and Mechanical Systems
Amir M. Gheytaghi; H. van Zeijl; S. Vollebregt; R.H. Poelma; C. Silvestri; R. Ishihara; G. Q. Zhang; P. M. Sarro;
Innovative Materials,
Volume 3, pp. 22-25, 2018. - Vacuum Assisted Liquified Metal (VALM) TSV Filling Method With Superconductive Material
J.A. Alfaro; P.M. Sberna; C. Silvestri; M. Mastrangeli; R. Ishihara; P.M. Sarro;
In 31th IEEE International Conference on Micro Electro Mechanical Systems (MEMS),
2018. DOI: 10.1109/MEMSYS.2018.8346611 - Carbon Nanotubes as Vertical Interconnects for 3D Integrated Circuits
Sten Vollebregt; Ryoichi Ishihara;
In Carbon Nanotubes for Interconnects,
Springer International Publishing, 2017.
document - The growth of carbon nanotubes on electrically conductive ZrN support layers for through-silicon vias
Sten Vollebregt; Sourish Banerjee; Frans D. Tichelaar; Ryoichi Ishihara;
Microelectronic Engineering,
Volume 156, pp. 126-130, 2016.
document - Effect of excimer laser annealing on a -InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers
Juan Paolo Bermundo; Yasuaki Ishikawa; Mami N Fujii; Toshiaki Nonaka; Ryoichi Ishihara; Hiroshi Ikenoue; Yukiharu Uraoka;
Journal of Physics D: Applied Physics,
Volume 49, Issue 3, pp. 035102-1-7, 2016. - The Direct Growth of Carbon Nanotubes as Vertical Interconnects in 3D Integrated Circuits
Sten Vollebregt; Ryoichi Ishihara;
Carbon,
Volume 96, pp. 332-338, 2016.
document - Manufacturing uniform field silicon drift detector using double boron layer
Negin Golshani; C.I.M Beenakker; Ryoichi Ishihara;
Nuclear Instruments and Methods in Physics Research Section A,
Volume 794, pp. 206-214, 2015. - Solution-processed polycrystalline silicon on paper
M. Trifunovic; T. Shimoda; R. Ishihara;
Applied Physics Letters,
Volume 106, pp. 163502, 2015. - Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
S. Vollebregt; R. Ishihara;
Journal of Visual Experiments,
Volume 106, pp. e53260, 2015.
document - Impact of the atomic layer deposition precursors diffusion on solid-state carbon nanotube based supercapacitors performances
G Fiorentino; S Vollebregt; FD Tichelaar; R Ishihara; PM Sarro;
IOP Nanotechnology,
Volume 26, Issue 6, pp. 064002, 2015.
document - High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
Negin Golshani; Jaber Derakhshandeh; C.I.M. Beenakker; R. Ishihara;
Solid-State Electronics,
Volume 105, pp. 6-11, 2015. - Doped Carbon Nanotubes for Interconnects
J. Robertson; S. Esconjauregui; L. D’Arsie; J. Yang; H. Sugime; G. Zhong; Y. Guo; S. Vollebregt; R. Ishihara; C. Cepek; G. Duesberg; T. Hallam;
In Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM),
2015. - Carbon nanotubes TSV grown on an electrically conductive ZrN support layer
Sten Vollebregt; Sourish Banerjee; Frans D. Tichelaar; Ryoichi Ishihara;
In IEEE International Interconnect Technology Conference,
pp. 281-283, 2015. - Design dependent SRAM PUF robustness analysis
M. Cortez; S. Hamdioui; R. Ishihara;
In 16th IEEE Latin-American Test Symposium,
2015. - Solution-Processed Poly-Si TFTs at Paper Compatible Temperatures
Miki Trifunovic; Jin Zhang; Michiel van der Zwan; Tatsuya Shimoda; Ryoichi Ishihara;
In SID Symposium Digest of Technical Papers,
pp. 415-418, 2015. - Solution-Processed LTPS on Paper
Ryoichi Ishihara; Miki Trifunovic; Paolo Sberna; Tatsuya Shimoda;
In Proceeding of IDW �15, The 22nd International Display Workshop,
2015. - A Flexible Ultrathin-Body Single-Photon Avalanche Diode With Dual-Side Illumination
Pengfei Sun; Charbon, E.; Ishihara, R.;
IEEE Journal of Selected Topics in Quantum Electronics,
Volume 20, Issue 6, pp. 1-8, Nov 2014.
document - Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications
Golshani, Negin; Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.;
APL Materials,
Volume 2, Issue 10, pp. 100702, 2014.
document - Dominant thermal boundary resistance in multi-walled carbon nanotube bundles fabricated at low temperature
Vollebregt, Sten; Banerjee, Sourish; Chiaramonti, Ann N; Tichelaar, Frans D; Beenakker, Kees; Ishihara, Ryoichi;
Journal of Applied Physics,
Volume 116, Issue 2, pp. 023514, 2014. - Carbon nanotube vertical interconnects fabricated at temperatures as low as 350 �C
Vollebregt, Sten; Tichelaar, FD; Schellevis, H; Beenakker, CIM; Ishihara, R;
Carbon,
Volume 71, pp. 249--256, 2014. - Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics:
Ryoichi ISHIHARA; Jin ZHANG; Miki TRIFUNOVIC; Jaber DERAKHSHANDEH; Negin GOLSHANI; Daniel M.R. TAJARI MOFRAD; Tao CHEN; Kees BEENAKKER; Tatsuya SHIMODA;
IEICE Transactions on Electronics,
Volume E97.C, Issue 4, pp. 227--237, 2014. - Failure Analysis and Reliability of Low-Temperature-Grown Multi-Wall Carbon Nanotube Bundles Integrated as Vias in Monolithic Three-Dimensional Integrated Circuits
Chiaramonti, Ann N; Vollebregt, Sten; Sanders, Aric W; Ishihara, Ryoichi; Read, David T;
Microsc. Microanal,
Volume 20, pp. 1762-1763, 2014. - Single-Grain Si TFTs Fabricated From Sputtered Si on a Polyimide Substrate
Jin Zhang; Michiel van der Zwan; Ryoichi Ishihara;
Journal of Display Technology,
Volume 10, Issue 11, pp. 945-949, 2014. - Carbon Nanotube Vertical Interconnects: Prospects and Challenges
Vollebregt, S; Beenakker, CIM; Ishihara, R;
In Micro-and Nanoelectronics: Emerging Device Challenges and Solutions,
CRC Press, 2014. - Solution-processed Poly-Si TFTs Fabricated at a Maximum Temperature of 150 �C
M. Trifunovic; Jin Zhang; M. van der Zwan; R. Ishihara;
In Technical Digest � International Electron Devices Meeting,
pp. 26.5.1-4, 2014. - Excimer Laser Annealing of Amorphous Oxide Thin-Film Transistors Passivated with Hybrid Passivation Layer
J. P. S. Bermundo; Y. Ishikawa; M. N. Fujii; M. V. D. Zwan; T. Nonaka; R. Ishihara; Y. Uraoka;
In The 21st International Display Workshops,
2014. - Single-Grain Si TFTs fabricated on a Precursor from Doctor-Blade Coated Liquid-Si
Jin Zhang; M. Trifunovic; M. van der Zwan; H. Takagishi; T. Shimoda; R. Ishihara;
In ECS and SMEQ Joint International Meeting,
2014. - Solution processed single-grain Si TFTs on a plastic substrate
Ishihara, R; Jin Zhang,; Zwan, M van der; Trifunovic, M; Takagishi, H; Shimoda, T;
In SID International symposium digest of technical papers Vol. 45. SID International Symposium. Digest of Technical Papers,
pp. 439-442, 2014. - 3D solid-state supercapacitors obtained by ALD coating of high-density carbon nanotubes bundles
Fiorentino, Giuseppe; Vollebregt, Sten; Tichelaar, FD; Ishihara, Ryoichi; Sarro, Pasqualina M;
In Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on,
IEEE, pp. 342--345, 2014. - Manufacture a submicron structure using a liquid precursor
R. Ishihara; M. van der Zwam; M. Trifunovic;
Patent no. 2010199, 08 2014. - Method of forming silicon on a substrate
Ishihara, R.; Trifunovic, M.; Van der Zwan, M.;
European Patent Office WO 2014175740 (A1), 2014.
document - Size-Dependent Effects on the Temperature Coefficient of Resistance of Carbon Nanotube Vias
Vollebregt, Sten; Banerjee, Sourish; Beenakker, Kees; Ishihara, Ryoichi;
Electron Devices, IEEE Transactions on,
Volume 60, Issue 12, pp. 4085--4089, 2013. - Thermal conductivity of low temperature grown vertical carbon nanotube bundles measured using the three-ω method.
S. Vollebregt; S. Banerjee; C.I.M. Beenakker; R. Ishihara;
Applied Physics Letters,
Volume 102, Issue 19, pp. 1-4, 2013. - Towards the integration of carbon nanotubes as vias in monolithic three-dimensional integrated circuits
S. Vollebregt; Chiaramonti A.N.; J. van der Cingel; C.I.M. Beenakker; R. Ishihara;
Japanese Journal of Applied Physics. Part 1, Regular Papers Brief Communications & Review Papers,
Volume 52, Issue 1-5, 2013. - Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si.
Jin Zhang; M. Trifunovic; M. van der Zwan; H. Takagishi; R. Kawajiri; T. Shimoda; C.I.M. Beenakker; R. Ishihara;
Applied Physics Letters,
Volume 102, Issue 24, pp. 1-4, 2013. - Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing
Fujii; M; Ishikawa; Y; R. Ishihara; J. van der Cingel; Mofrad; MRT; Horita; M; Uraoka; Y;
Applied Physics Letters,
Volume 102, Issue 12, pp. 1-4, 2013. - Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology
Sten Vollebregt; Ryoichi Ishihara; Jaber J. Derakhshandehohan van der Cingel; Hugo Schellevis; C.I.M. Beenakker;
In Nanoelectronic Device Applications Handbook,
Taylor and Francis, 2013. - Carbon Nanotubes as Interconnects in Integrated Circuits
Vollebregt, S; Ishihara, R; Beenakker, CIM;
In Dekker Encyclopedia of Nanoscience and Nanotechnology, Second Edition,
Taylor and Francis, 2013. - Flexible single-grain Si TFTs
R. Ishihara;
In The 13th International Meeting on Information Display (IMID2013),
Deagu, Korea, 2013.
document - Carbon nanotube vias fabricated at back-end of line compatible temperature using a novel CoAl catalyst
S. Vollebregt; H. Schellevis; C.I.M. Beenakker; R. Ishihara;
In S. Ogawa (Ed.), IEEE International Interconnect Technology Conference-technical papers,
Kyoto, Japan, Jun. 2013. - Flexible single-grain Si TFTs
Ryoichi Ishihara;
In 4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT),
Grenoble (France), 2013. - A Flexible Ultra-Thin-Body SOI Single-Photon Avalanche Diode
Pengfei Sun; Benjamin Mimoun; Edoardo Charbon; Ryoichi Ishihara;
In IEEE International Electron Device Meeting (IEDM),
Washington, DC, USA, 2013. - Improvement on MIS Properties of Single-Grain Germanium by Pulsed-Laser Annealing
Pengfei Sun; M. van der Zwan; A. Arslan; E. Charbon; R. Ishihara;
In 44th IEEE Semiconductor Interface Specialists Conference,
Arlington, USA, 2013. - Location controlled high performance single-grain Ge TFTs on glass substrate
T. Chen; R. Ishihara; C.I.M. Beenakker;
Solid-State Electronics,
Volume 69, pp. 94-98, Mar. 2012. DOI 10.1016/j.sse.2011.11.027. - Monolithic 3D-ICs with single grain Si thin film transistors
R. Ishihara; J. Derakhshandeh; M.R. Tajari Mofrad; T. Chen; N. Golshani; C.I.M. Beenakker;
Solid-State Electronics,
Volume 71, pp. 80-87, May 2012. DOI 10.1016/j.sse.2011.10.025. - Analysis of u-Czochralski technique using two-dimensional crystallization simulator
K. Matsuki; R. Saito; S. Tsukamoto; M. Kimura; R. Ishihara;
Journal of Crystallization Process and Technology,
Volume 2, Issue 1, pp. 12-15., Jan. 2012. DOI 10.4236/jcpt.2012.21002. - Thick single grain silicon formation with microsecond green laser crystallization
A. Arslan; H.J. Kahlert; P. Oesterlin; D.T. Mofrad; R. Ishihara; C.I.M. Beenakker;
ECS Transactions,
Volume 50, Issue 8, pp. 35-42, Oct. 2012. ISBN 978-1-62332-007-2. - Influence of the growth temperature on the first and second-order Raman band ratios and widths of carbon nanotubes and fibers
S. Vollebregt; R. Ishihara; F.D. Tichelaar; Y. Hou; C.I.M. Beenakker;
Carbon,
Volume 50, Issue 10, pp. 3542-3554, Aug. 2012. DOI 10.1016/j.carbon.2012.03.026. - Integrating carbon nanotubes as vias in a monolithic 3DIC process
S. Vollebregt; R. Ishihara; A.N. Chiaramonti; J. van der Cingel; C.I.M. Beenakker;
In Proc. International Conference on Solid State Devices and Materials (SSDM 2012),
Kyoto, Japan, pp. 1170-1171, Sep 2012. - Reliability of single-grain silicon TFTs fabricated from spin-coated liquid-silicon
Z. Jin; R. Ishihara; H. Takagishi; R. Kawajiri; T. Shimoda; C.I.M. Beenakker;
In Proc. 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),
Kyoto, Japan, pp. 309-312, Jul. 2012. ISBN: 978-1-4673-0399-6. - OTFT with PNDT3BT-20 dispersed solution by drop casting method
M. Trifunovic; T. Yokota; Y. Kato; T. Tokuhara; I. Hirata; I. Osaka; K. Takimiya; T. Sekitani; T. Someya; R. Ishihara;
In Proc. 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),
Kyoto, Japan, pp. 203-206, Jul 2012. ISBN: 978-1-4673-0399-6. - Electrical characterization of carbon nanotube vertical interconnects with different lengths and widths
S. Vollebregt; R. Ishihara; F.D. Tichelaar; J. van der Cingel; C.I.M. Beenakker;
In IEEE International Interconnect Technology Conference (IITC 2012),
San Jose, CA, USA, pp. 1-3, Jun. 2012. DOI 10.1109/IITC.2012.6251578. - Single-grain Si TFTs fabricated by liquid-Si and long-pulse excimer-laser
R. Ishihara; Jin Zhang; M. Trifunovic; M. van der Zwan; H. Takagishi; R. Kawajiri; T. Shimoda; C.I.M. Beenakker;
In Y. Kuo (Ed.), ECS Transactions,
Honolulu, USA, pp. 49-53, Oct. 2012. ISBN 978-1-62332-007-2. - High-sensitivity single-grain Si PIN photodiode with thick-silicon and deep doped regions
A. Arslan; R. Ishihara; C.I.M. Beenakker;
In 8th International Thin-Film Transistor Conference,
Lisbon, Portugal, Jan. 2012. - Single-Grain Germanium TFTs
R. Ishihara; T. Chen; A. Baiano; M.R. Tajari Mofrad; C.I.M. Beenakker;
In Y. Kuo; G. Bersuker (Ed.), ECS Transactions: Challenges Si- and Ge-based TFT Technology,
Hong Kong, China, pp. 65-74, Jun. 2012. DOI 10.1149/1.3600725. - Low-temperature bottom-up integration of carbon nanotubes for vertical interconnects in monolithic 3D integrated circuits
S. Vollebregt; R. Ishihara; J. van der Cingel; C.I.M. Beenakker;
In 3rd IEEE International 3D Systems Integration Conference (3DIC 2011),
Osaka, Japan, Jan. 2012. DOI 10.1109/3DIC.2012.6262989. - Multilayer conformal coating of highly dense Multi-Walled Carbon Nanotubes bundles
G. Fiorentino; S. Vollebregt; R. Ishihara; P.M. Sarro;
In 2012 12th IEEE Conference on Nanotechnology (IEEE-NANO),
Birmingham, UK, Aug. 2012. ISBN 978-1-4673-2198-3; DOI 10.1109/NANO.2012.6322054. - Contact resistance of low-temperature carbon nanotube vertical interconnects
S. Vollebregt; A.N. Chiaramonti; R. Ishihara; H. Schellevis; C.I.M. Beenakker;
In K. Jiang (Ed.), 2012 12th IEEE Conference on Nanotechnology (IEEE-NANO),
Birmingham, UK, Aug. 2012. ISBN 978-1-4673-2198-3; DOI 10.1109/NANO.2012.6321985. - Monolithic 3D- ICs with Single Grain Si Thin Film Transistors
R. Ishihara; M. R. T. Mofrad; J. Derakhshandeh; N. Golshani; C. I. M. Beenakker;
In IEEE 11th International Conference on Solid-State and Integrated Circuit Technology,
2012. - Excimer laser crystallization of InGaZnO4 on SiO2 substrate
T. Chen; M.Y. Wu; R. Ishihara; K. Nomura; T. Kamiya; H. Hosono; C.I.M Beenakker;
Journal of Materials Science: Materials Electronics,
Volume 22, pp. 1694-1696, 2011. DOI 10.1007/s10854-011-0347-4. - Hot carrier effect and tunneling effect of location- and orientation-controlled (100)- and (110)-oriented single-grain Si TFTs without seed substrate
T. Chen; R. Ishihara; C.I.M. Beenakker;
IEEE Transactions on Electron Devices,
Volume 58, Issue 1, pp. 216-223, 2011. DOI 10.1109/TED.2010.2084089. - Monolithic 3-D integration of SRAM and image sensor using two layers of single-grain silicon
J.Derakhshandeh; N.Golshani; R. Ishihara; M.R. Tajari Mofrad; M. Robertson; T. Morrison; C.I.M. Beenakker;
IEEE Transactions on Electron Devices,
pp. 3954-3961, 2011. - Monolithic 3D Integration of SRAM and Image Sensor Using Two Layers of Single Grain Silicon
Jaber Derakhshandeh; Negin Golshani; Ryoichi Ishihara; Mohammad Reza Tajari Mofrad; Michael Robertson; Thomas Morrison; C.I.M Beenakker;
IEEE Transactions on Electron Devices,
Volume 58, Issue 11, pp. 3954-3961, 2011. - Design and fabrication of single grain (SG) TFTs and lateral PIN photodiodes for low dose X-ray detection
A. Arslan; R. Ishihara; J. Derakhshandeh; C.I.M. Beenakker;
In Proc. of SPIE Medical Imaging Conference,
Lake Buena Vista, Orlando, USA, pp. 79614N-1-79614N, Feb. 2011. DOI 10.1117/12.877959.
document - Electrical characterisation of low temperature aligned carbon nanotubes for vertical interconnects
S. Vollebregt; R. Ishihara; J. van der Cingel; H. Schellevis; C.I.M. Beenakker;
In Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011),
Veldhoven, The Netherlands, Nov. 2011. - Single grain TFTs and lateral photodiodes for large area X-ray detection
A. Arslan; R. Ishihara; C.I.M. Beenakker;
In Proc. 2011 International Image Sensor Workshop (IISW),
Hokkaido, Japan, pp. 301-304., Jun. 2011. - Monolithic 3D-ICs with single grain Si thin film transistors
R. Ishihara; N. Golshani; J. Derakhshandeh; M.R. Tajari Mofrad; C.I.M. Beenakker;
In Proc. 12th International Conference on Ultimate Integration on Silicon (ULIS),
Cork, Ireland, pp. 1-4, Mar. 2011. ISBN 978-1-4577-0090-3; DOI 10.1109/ULIS.2011.5758004. - Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology
S. Vollebregt; R. Ishihara; J. J. Derakhshandeh. van der Cingel; H. Schellevis; C.I.M. Beenakker;
In Proc. 11th IEEE International Conference on Nanotechnology (NANO 2011),
Portland, OR, pp. 985-990, Aug. 2011. - Single-grain Si TFTs for high-speed flexible electronics
R. Ishihara; T. Chen; M. van der Zwan; M. He; H. Schellevis; C.I.M. Beenakker;
In K. Blankenbach; L.C. Chien (Ed.), Proc. of SPIE: Advances Display Technologies and E-papers and Flexible Displays,
San Francisco, CA, SPIE, Jan. 2011. ISBN 9780819484932; DOI 10.1117/12.876649. - Patterned aligned carbon nanotubes for vertical interconnects in 3D integrated TFT circuits
S. Vollebregt; R. Ishihara; J. J. Derakhshandeh. van der Cingel; W.H.A. Wien; C.I.M. Beenakker;
In 7th International Thin-Film Transistor Conference,
Cambridge, United Kingdom, Mar. 2011. - Single-grain Si TFTs using spin-coated liquid-silicon
Jin Zhang; R. Ishihara; H. Tagagishi; R. Kawajiri; T. Shimoda. C.I.M. Beenakker;
In 2011 International Electron Device Meeting (IEDM 2011),
Washington, DC, USA, pp. 14.5.1-14.5.4, Dec. 2011. ISBN 978-1-4577-0505-2; DOI 10.1109/IEDM.2011.6131553. - Growth of high density aligned carbon nanotubes using palladium as catalyst
S. Vollebregt; J. Derakhshandeh; R. Ishihara; M. Y. Wu; C. I. M. Beenakker;
Journal of Electronic Materials,
Volume 39, Issue 4, pp. 371-375, 2010. - High speed 6T SRAM cells using single grain TFTs fabricated by ""angstrom""""micro""-Czochralski-Czochralski process at low temperature
Negin Golshani; Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
Japanese Journal of Applied Physics (JJAP),
2010. - High Performance Single Grain Si- TFT X-ray Image Sensors
A. Arslan; R. Ishihara; C.I.M. Beenakker;
In Semiconductor Advances for Future Electronics Workshop (SAFE),
Veldhoven, The Netherlands, Nov. 2010. - Single-grain Si TFTs with high performance surpassing SOI-TFTs
R. Ishihara; T. Chen; C.I.M. Beenakker;
In Proceedings of International Meeting on Information Display,
2010. - Patterned growth of carbon nanotubes for vertical interconnect in 3D integrated circuits
S. Vollebregt; R. Ishihara; J. Derakhshandeh; W. Wien; J. van der Cingel; C.E.M. Beenakker;
In Proc. of SAFE 2010,
pp. 184-187, 2010. - Monolithic 3D Integration of SRAM and Image Sensor Using Two Layers of Single Grain Silicon
Negin Golshani; Jaber Derakhshandeh; Ryoichi Ishihara; C.I.M Beenakker; Michael Robertson; Thomas Morrison;
In IEEE International Conference on 3D System Integration,
Munich, Germany, 2010. - Low Subthreshold Slope and High Mobility Single Grain Silicon TFTs Using Grown Oxide
Negin Golshani; Jaber Derakhshandeh; Shu Yi Liu; Ryoichi Ishihara; J. Van der Cingel; C.I.M Beenakker;
In EMRS,
2010. - Direct observation of the electrical activity of coincidence-site lattice boundaries in location-controlled silicon islands using scanning spread resistance microscopy
N. Matsuki; R. Ishihara; C.I.M. Beenakker;
Journal of the society for information display,
Volume 17, Issue 3, pp. 293-297, 2009. - Stacking of Single-Grain Thin-Film Transistors.
M.R. Tajari Mofrad; J. Derakhshandeh; R. Ishihara; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
Japanese journal of applied physics,
Volume 48, 2009. ISSN 0021-4922. - Monolithic Stacking of Single-Grain Thin-Film Transistors to realize high performance three dimensional integrated circuits
M.R Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
Japanese Journal of Applied Physics,
Volume 48, 2009. - Strained Single Grain Silicon n- and p-channel Thin Film Transistors by Excimer Laser
A. Baiano; R. Ishihara; J. van der Cindel; K. Beenakker;
Accepted IEEE Electron Device Letters,
2009. - Investigating Low Temperature High Density Aligned Carbon Nanotube and Nanofilament Growth using Palladium as Catalyst
S. Vollebregt; J. Derakhshandeh; M.Y. Wu; R. Ishihara; C.I.M. Beenakker;
In SAFE 2009,
STW, pp. 125-128, 2009. - Comparing Single Grain and Poly silicon Lateral PIN Photodiodes
Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
In Proceedings of SAFE 2009,
Veldhoven, Netherlands, 2009. - High speed 6T SRAM cells using single grain TFTs fabricated by ""angstrom""""micro""-Czochralski process at low temperature
Negin Golshani; Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
In Proceedings of SAFE 2009,
Veldhoven, Netherlands, 2009. - Growth of high density aligned carbon nanotubes using palladium as catalyst
S. Vollebregt; J. Derakhshandeh; R. Ishihara; C.I.M. Beenakker;
In Proceedings of Electronic Material conference 2009,
USA, 2009. - A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon
M.R. Tajari Mofrad; A. La Magna; R. Ishihara; J. Derakhshandeh; J. van der Cingel; C.I.M. Beenakker;
In Proceedings of E-MRS Symposium Q Laser and plasma processing for advanced materials E-MRS,
pp. 1-4, 2009.
document - Monolithic 3D-ICs with Single Grain Si TFTs
R. Ishihara; J. Derakhshandeh; M.R. Tajari Mofrad; T. Chen; C.I.M. Beenakker;
In Proceedings of Active-Matrix and Flat Panel Displays 2009,
Tokyo, Japan, 2009.
document - Fabrication of 6T SRAM cell using single grain TFTs obtained by ""angstrom""""micro""-Czochralski process
Negin Golshani; R. Ishihara; J. Derakhshandeh; C.I.M Beenakker;
In Proceedings of Active-Matrix and Flat Panel Displays 2009,
Nara, Japan, 2009.
document - Simulation and Experimental study of crystallographic orientation control of 2D location controlled single grain crystalline silicon
M.R. Tajari Mofrad; R. Ishihara; J. Derakhshandeh; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
In Proc. of SAFE 2009,
pp. 185-188, 2009.
document - Analog and digital output lateral photodiodes fabricated by ""angstrom""""micro""-Czochralski process at low temperature
J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; C.I.M. Beenakker;
In Proc. of DRC 2009,
IEEE, pp. 93-94, 2009.
document - Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscopy
N. Matsuki; R. Ishihara; A. Baiano; Y. Hiroshima; S. Inoue; C.I.M. Beenakker;
In Materials Research Society Symposium Proceedings,
pp. 94-99, 2009. - Integrated High Performance (100) and (110) Oriented Single-Grain Si TFTs without Seed Substrate
T. Chen; R. Ishihara; J. van der Cingel; A. Baiano; M.R. Tajari Mofrad; H. Schellevis; C.I.M. Beenakker;
In International Electron Devices Meeting (IEDM 2009),
Baltimore, MD, USA: IEEE, pp. 179-182, 2009.
document - Single Grain Si TFTs for RF and 3DICs
R. Ishihara; A. Baiano; T. Chen; J. Derakhshandeh; M.R. Tajari Mofrad; M. Danesh; N. Saputra; J. Long; C.I.M. Beenakker;
In 2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT),
Xian, China, 2009. - High Performance n- and p-channel Strained Single Grain Silicon TFTs using Excimer Laser
A. Baiano; R. Ishihara; K. Beenakker;
In Mater. Res. Soc. Symp. Proc,
Warrendale, PA, Materials Research Society, pp. 1-11, 2009.
document - Single-Grain Si Thin Film Transistors SPICE Model, Analog and RF Circuit Applications
A. Baiano; M. Danesh; N. Saputra; R. Ishihara; J. Long; W. Metselaar; C.I.M. Beenakker; N. Karaki; Y. Hiroshima; S. Inoue;
Solid State Electronics,
Volume 52, Issue 9, pp. 1345-1352, Aug. 2008. - Single-Grain Si TFTs and Circuits Fabricated Through Advanced Excimer-Laser Crystallization
R. Ishihara; Vikas Rana; Ming He; Y. Hiroshima; S. Inoue; Wim Metselaar; Kees Beenakker;
Solid State Electronics,
Volume 52, pp. 353-358, 2008. - Location and Crystallographic Orientation Control of Si Grains Through Combined Metal Induced Lateral Crystallization and micro-Czochralski process
Chen Tao; Ryoichi Ishihara; J. W .Metselaar; C.I.M Beenakker; Meng-Yue Wu;
JJAP,
Volume 47, Issue 3, pp. 1880-1883, 2008. - An Assessment of angstrom micro-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integation
N. Saputra; M. Danesh; A. Baiano; R. Ishihara; J.R. Long; N. Karaki; S. Inoue;
IEEE Journal of Solid-State Circuits,
Volume 43, Issue 7, pp. 1563-1576, Jul. 2008. - An Assessment of �_-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration
N. Saputra; M. Danesh; A. Baiano; R. Ishihara; J. R. Long; N. Karaki; S. Inoue;
IEEE Journal of Solid State Circuits,
Volume 43, Issue 7, pp. 1563-1576, 2008. - Formation of Location-Controlled Germanium Grains by Excimer Laser
A. Baiano; R. Ishihara; J. van d. Cingel; K. Beenakker;
ECS Transactions Thin Film Transistors,
Volume 13, Issue 9, Oct. 2008. - Reliability Analysis of Single Grain Si TFT using 2D Simulation
A. Baiano; J. Tan; R. Ishihara; K. Beenakker;
ECS Transactions Thin Film Transistors,
Volume 13, Issue 9, Oct. 2008. - Investigation of Local Electrical Properties of Coincidence-Site-Lattice Boundaries in Location-Controlled Silicon Islands Using Scanning Capacitance Microscopy
N. Matsuki; R. Ishihara; A. Baiano; K. Beenakker;
Applied Physics Letters,
Volume 93, Issue 6, Aug. 2008. - CMP effect on the quality of thin silicon film crystallized by ""angstrom""""micro""-Czochralski process with excimer laser irradiation
J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; J. van der Cingel; C.I.M Beenakker;
In The 4th International Thin-Film Transistor Conference ITC 08,
Seol, Korea, 2008. - Monolithic Three-Dimensional Stacking of Integrated Circuits with a Low-Temperature Process
Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; Ryoichi Ishihara; Kees Beenakker;
In Proceedings of SAFE 2008,
Velhoven, Netherlands, 2008. - Optimizing Chemical Mechanical Polishing process in 3D-IC
J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; J. Van der Cingel; C.I.M Beenakker;
In Proceedings of SAFE 2008,
Velhoven, Netherlands, 2008.
document - Monolithic Stacking of Single-Grain Thin-Film Transistors
Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
In Proceedings of Active-Matrix and Flat Panel Displays 2008,
Tokyo, Japan, 2008. - 2D Simulation of Hot-Carrier-Induced Degradation and Reliability Analysis for Single Grain Si TFTs
J. Tan; A. Baiano; R. Ishihara; K. Beenakker;
In Proceeding of SAFE,
2008. - Germanium Grains Location Control using ""angstrom""""micro""-Czochralski Process
A. Baiano; R. Ishihara; J. van d. Cingel; K. Beenakker;
In Proceeding of SAFE,
2008. - A Flexible Active-Matrix Electronic Paper with Integrated Display Driver using the -Czochralski Single Grain TFT Technology
W. M. Chim; N. Saputra; A. Baiano; R. Ishihara; A. van Genderen;
In Proceeding of PRORISC,
2008. - Monolithic 3D Integration of Single-Grain Si TFTs
M.R. Tajari Mofrad; R. Ishihara; J. Derakhshandeh; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
In Material Research Society Symposium Proceedings,1066,A20,2008,MRS Spring Meeting,
San Francisco, CA, USA, 2008. - Single-Grain Si TFTs for Flexible Electronics and 3D-ICs
R. Ishihara; A. Baiano; N. Saputra; M. Danesh; N. Matsuki; T. Chen; V. Rana; M. He; J. Long; Y. Hiroshima; N. Karaki; S. Inoue; C.I.M. Beenakker;
In International TFT Conference,
Jan. 2008. - Fabrication of Three-Dimensional Inverters Using the ""angstrom""""micro""-Czochralski
Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
In European Solid-State Device Research Conference 2008,
Edinburgh, Scotland, 2008. - Agglomeration of amorphous silicon film with high energy density excimer laser irradiation
Ming He; Ryoichi Ishihara; Wim Metselaar; Kees Beenakker;
Thin Solid Films,
Volume 515, pp. 2872-2878, 2007. - Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the micro-Czochralski (grain filter) process
R. Ishihara; D. Danciu; F. Tichelaar; M. He; Y. Hiroshima; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
Journal of Crystal Growth,
Volume 299, Issue 2, pp. 316-321, Feb. 2007. - Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100oC
Ming He; Ryoichi Ishihara; Ellen J. J. Neihof; Yvonne van Andel; Hugo Schellevis; Wim Metselaar; Kees Beenakker;
Japanese Journal of Applied Physics,
Volume 46, Issue 3B, pp. 1245-1249, Mar. 2007. - High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by Micro-Czochralski Process with Capping Layer
Rana Vikas; Ryoichi Ishihara; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; J.W. Metselaar; C.I.M. Beenakker;
IEEE Transactions on Electron Devices,
Volume 54, Issue 1, pp. 124-130, Jan. 2007. - Simulation of twin boundary effect on characteristics of single-grain silicon thin film transistors
F. Yan; P. Migliorato; R. Ishihara;
Applied Physics Letters,
Volume 91, pp. 073509, 2007. - Single-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs
Ryoichi Ishihara; Vikas Rana; Ming He; Wim Metselaar; Kees Beenakker; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue;
In Society for Information Display 2007 International Symposium,
pp. 252-255, 2007. - Local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning spread resistance microscopy
N. Matsuki; R. Ishihara; A. Baiano; Y. Hiroshima; S. Inoue; C.I.M Beenakker;
In Proceeding of The 14th International Display Workshops,
pp. 489-492, 2007. - Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscope
N. Matsuki; R. Ishihara; A. Baiano; Y. Hiroshima; S. Inoue; C.I.M Beenakker;
In Proceeding of SAFE,
2007. - Orientation and Location Controlled Si Grains Through Combined MILC and ""angstrom""""micro""-Czochralski Process
C. Tao; R. Ishihara; J. W. Metselaar; C. I. M. Beenakker;
In Proceeding of The 14th International Display Workshops,
pp. 2011-2012, 2007. - Analog and RF Design Using the �_-Czochralski Single Grain TFT Technology
Nitz Saputra; Mina Danesh; Alessandro Baiano; Ryoichi Ishihara; Satoshi Inoue; Nobuo Karaki; John R. Long;
In Proceeding of PRORISC,
2007. - SPICE Modeling with NQS effect of Single-Grain Si TFTs using BSIMSOI
Alessandro Baiano; Ryoichi Ishihara; Nobuo Karaki; Satoshi Inoue; Wim Metselaar; Kees Beenakeer;
In Proceeding of SAFE,
2007. - Single-Grain Si Thin-Film Transistors for Analog and RF Circuit Applications
N. Saputra; M. Danesh; A. Baiano; R. Ishihara; J.R. Long; J.W. Metselaarand; C.I.M. Beenakker; N. Karaki; Y. Hiroshima; S. Inoue;
In Proceeding of ESSDERC 2007,
pp. 107-110, 2007. - Preparation of large, location-controlled Si grains by excimer-laser crystallization of a-Si films sputtered at 100oC
M. He; R Ishihara; C. I. M. Beenakker;
In Mater. Res. Soc. Proc.,
2007. - Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy
V. Nadazdy; V. Rana; R. Ishihara; S. Lanyi; R. Durny; J.W. Metselaar; C.I.M. Beenakker;
In Mater. Res. Soc. Proc.,
2007. - DC modeling of Single-Grain Si TFTs using BSIMSOI
A. Baiano; R. Ishihara; N. Karaki; S. Inoue; W. Metselaar; K. Beenakker;
In International TFT Conference,
pp. 200-203, Jan. 2007. - SPICE Modeling of Single-Grain Si TFTs using BSIMSOI
A. Baiano; R. Ishihara; N. Saputra; J. Long; N. Karaki; S. Inoue; W. Metselaar; K. Beenakeer;
In ECS Transactions-ULSI vs. TFT Conference,
Jul. 2007. - Local electrical properties of coincidence site lattice boundaries in location-controlled silicon islands by scanning capacitance microscopy
Nobuyuki Matsuki; Ryoichi Ishihara; Chen Tao; Yasushi Hiroshima; J. W .Metselaar; C.I.M Beenakker;
In AMFPD07,
pp. 251-253, 2007. - Location and Orientation Control of Si Grains Through Combined MILC and �_-Czochralski process
Chen Tao; Ryoichi Ishihara; J. W .Metselaar; C.I.M Beenakker;
In AM-FPD07,
pp. 271-273, 2007. - Single-grain Si TFTs fabricated at 100oC for microelectronics on a plastic substrate
M. He; R. Ishihara; C. I. M. Beenakker;
In 2007 MRS Proceedings: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology,
2007. - Textured Self-assembled Square-shaped Poly-Si Grains by Multiple Shots Excimer Laser Crystallization
Ming He; Ryoichi Ishihara; Wim Metselaar; Kees Beenakker;
Journal of Applied Physics,
Volume 100, 2006. - Capping Layer on Thin Si Film for mu-Czochralski Process with Excimer Laser Crystallization
Rana Vikas; Ryoichi Ishihara; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; Wim Metselaar; Kees Beenakker;
Japanese Journal of Applied Physics,
Volume 45, Issue 5, pp. 4340-4343, 2006. - A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
R. Ishihara; A. Glazer; Y. Raab; P. Rusian; M. Dorfan; B. Lavi; I. Leizerson; A. Kishinevsky; Y. van Andel; X. Cao; J. W. Metselaar; C. I. M. Beenakker; S. Stolyarova; Y. Nemirovsky;
Journal of IEICE,
Volume E89-C, Issue 10, pp. 136-140, 2006. - Effects of Capping Layer on Grain Growth with mu-Czochralski Process during Excimer Laser Crystallization
Ming He; Ryoichi Ishihara; Yasushi Hiroshima; Satoshi Inoue; Tatsuya Shimoda; Wim Metselaar; Kees Beenakker;
Japanese Journal of Applied Physics,
Volume 45, Issue 1, 2006. - Preferred <100> surface and in-plane orientations in self-assembled poly-Si by multiple excimer-laser irradiation
M. He; R Ishihara; C. I. M. Beenakker;
Electrochemical Society Transaction,
Volume 3, Issue 8, pp. 167-172, Oct. 2006. - Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy
V. Nadazdy; V. Rana; R. Ishihara; S. Lanyi; R. Durny; J.W. Metselaar; C.I.M. Beenakker;
In Polycrystalline Thin-Film Silicon Science and Technology,
2006.
document - Preparation of Large Poly-Si Grains by Excimer Laser Crystallization of Sputtered a-Si film with Processing Temperature of 100 �C
M. He; R. Ishihara; E.J.J. Neihof; Y. van Andel; H. Schellevis; C.I.M. Beenakker;
In Proc. AM-FPD 06,
2006.
document - Preparation of large, location-controlled Si grains by excimer laser crystallization of �-Si film sputtered at 100 �C
M. He; E.J.J. Neihof; Y. van Andel; H. Schellevis; R. Ishihara; J.W. Metselaar; C.I.M. Beenakker;
In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006,
2006.
document - Preferred <100> Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation
M. He; R. Ishihara; W. Metselaar; Kees Beenakker;
In 2006 Joint International Meeting of the Electrochemical Society, Symposium Thin Film Transistors 8 (TFT8),
Cancun, Mexico, Oct. 2006.
document - Single-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs
Ryoichi Ishihara; Vikas Rana; Ming He; Wim Metselaar; Kees Beenakker;
In 2006 8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT),
Shanghai, China, pp. 174-177, Oct. 2006.
document - Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization
R. Ishihara; M. He; V. Rana; Y. Hiroshima; S. Inoue; T. Shimoda; J.W. Metselaar; C. I. M. Beenakker;
Thin Solid Films,
Volume 487, Issue 1-2, pp. 97-101, Sep. 2005. - Switch-on undershoot current observed in thin film transistors
Feng Yan; Piero Migliorato; Yi Hong; V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda;
Journal of Applied Physics,
Volume 87, Issue 1, 2005. - Dependence of Single-Crystalline Si Thin-Film Transistor Characteristics on the Channel Position inside a Location-Controlled Grain
V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda; J.W.Metselaar; C. I.M. Beenakker;
IEEE Transactions on Electron Devices,
Volume 52, Issue 12, Dec. 2005. - High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by �_-Czochralski Process with Capping Layer
Rana Vikas; Ryoichi Ishihara; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; J.W. Metselaar; C.I.M. Beenakker;
In IEDM 2005,
2005. - Process Simulation of Laser Crystallization and Analysis of Crystallization Process of Si films
M. Kimura; R. Saito; S. Tsukamoto; Y. Hiroshima; S. Inoue; T. Shimoda; R. Ishihara;
In IDW05,
2005. - A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
R. Ishihara; A. Glazer; Y. Raab; P. Rusian; M. Dorfan; B. Lavi; I. Leizerson; A. Kishinevsky; Y. van Aandel; X. Cao; J. W. Metselaar; C. I. M. Beenakker; S. Stolyarova; Y. Nemirovsky;
In IDW05,
2005. - Capping Layer on Thin Si Film for micro-Czochralski Process with Excimer Laser Crystallization
R. Vikas; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
In AMLCD05,
2005. - Phase-Field Modelling of Excimer Laser Lateral Crustallization of Silicon Thin Films
A. Burtsev; M. Apel; R. Ishihara; C.I.M. Beenakker;
Thin Solid Films,
Volume 427, Issue 1-2, pp. 309-313, Mar. 2003. - Advanced excimer-laser crystallization process for single-crystalline thin film transistors
R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; J.W. Metselaar; C.I.M. Beenakker;
Thin Solid Films,
Volume 427, Issue 1-2, pp. 77-85, Mar. 2003. - Poly-Si TFT Structures
R. Ishihara;
In Thin Film Transistors, Materials and Processes,
Boston, Kluwer Academic Publishers, 2003. - Single-crystalline Si TFTs fabricated by the µ-Czochralski (grain-filter) process
Y. Hiroshima; R. Ishihara; V. Rana; D. Abe; S. Inoue; T. DShimoda; J.W. Metselaar; C.I.M. Beenakker;
In 2003 Int. Workshop on Active-Matrix Liquid-Crystal Displays,
Tokyo, Japan, pp. 157-158, Jul. 2003.
document - Dependence of single-crystalline Si TFT characteristics on the channel position in a location-controlled grain
V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Higashi; S. Inoue; T. Shimoda; J.W. Metselaar;
In 2003 Int. Workshop on Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials,
Tokyo, pp. 17-20, Jul. 2003.
document - Dynamic behavior of polycrystalline and single grain silicon TFTs
P. Migliorato; F. Yan; S. Inoue; T. Shimoda; R. Ishihara;
In Proc. 10th International Display Workshop,
Fukuoka, Japan, Dec. 2003. - High-performance TFTs fabricated inside a location-controlled grain by µ-Czochralski (grain-filter) process
V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Higashi; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
In Proc. 3rd International Meeting on Information Display,
Deagu, Korea, pp. 1-4, Jul. 2003.
document - High Performance P-Channel Single-Crystalline Si TFTs Fabricated Inside a Location-Controlled Grain by mu-Czochralski Process
V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda; J.W. Metselaar; C. I.M. Beenakker;
In Proc. SAFE 2003,
Veldhoven, The Netherlands, pp. 639-642, Nov. 2003. ISBN 90-73461-39-1.
document - Energy Density Window for Location-Controlled Si Grains by Dual-Beam Excimer-Laser
A. Burtsev; R. Ishihara; C. I. M. Beenakker;
In Thin Solid Films,
pp. 199-206, Nov. 2002. ISSN 0040-6090. - Single-Crystalline Si Thin-Film Transistors Fabricated with mu-Czochralski (Grain-Filter) Process
R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; J.W. Metselaar; C.I.M. Beenakker;
In M. Matsumura (Ed.), Tech Dig. 2002 Intern. Workshop on Active-Matrix LCDs - TFT Technologies and Rel. Materials,
Tokyo, Japan, pp. 53-56, Jul. 2002 2002. - High Performance P-Channel Single-Crystalline Si Thin Film Transistors
V. Rana; R. Ishihara;
In SAFE 2002,
Veldhoven, The Netherlands, pp. 35, Nov. 2002. ISBN 90-73461-32-4. - Filtered Photodiode Arrays for NADH Fluorescence Analysis
V.P. Iordanov; J. Bastemeijer; R. Ishihara; P.M. Sarro; A. Bossche; M. Vellekoop;
In Proc. SeSens 2002,
Veldhoven, The Netherlands, STW, pp. 627-630, Nov. 2002. ISBN 90-73461-33-2. - Single-crystalline Si thin film transistors with electron cyclotron resonance plasma enhanced chemical vapor deposited gate SiO2
R. Ishihara; Y. Hiroshima; D. Abe; B.D. van Dijk; P.Ch. van der Wilt; S. Higashi; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
In Proc. Eurodisplay 2002,
Nice, France, pp. 407-409, Oct. 2002. ISBN 2-9507804-3-1. - Single-Crystalline Si TFTs Fabricated with Micro-Czochralski (grain-filter) process
R. Ishihara; B.D. van Dijk; P.Ch. van der Wilt; J.W. Metselaar; C.I.M. Beenakker;
In Y.B. Kim; I.G. Kang (Ed.), Proc. 2nd International Meeting on Information Display,
Daegu, Korea, pp. 159-162, Aug. 2002. ISSN 1598-3196. - Dynamic characteristics of single grain silicon TFTs
F. Yan; N. Bavidge; P. Migliorato; R. Ishihara;
In Proc. 202nd Meeting of the Electrochemical Societey, Thin Film Transistor Technologies VI,
pp. 75-81, 2002. - Location-control of large grains by micro-Czochralski (grain filter) process and its application to single-crystalline silicon thin-film transistors
R. Ishihara; P.C. van der Wilt; B.D. van Dijk; J.W. Metselaar; C.I.M. Beenakker;
In Proc. 202nd Meeting of the Electrochemical Societey, Thin Film Transistor Technologies VI,
pp. 63-74, 2002. - CMOS-Compatible Optical Filter for High-Throughput Enzymatic-Analysis Devices
V.P. Iordanov; R. Ishihara; P.M. Sarro; J. Bastemeijer; A. Bossche; M.J. Vellekoop;
In IEEE Sensors 2002,
Hyatt Orlando, Orlando, Florida, USA, pp. 9.6/1-9.6/4, Jun. 2002. ISBN 0-7803-7455-X. - A Combined TEM and Time-Resolved Optical Reflectivity Investigation Into The Excimer-Laser Crystallization of a-Si Films
F. Voogt; R. Ishihara;
Thin Solid Films,
Volume 383, pp. 45-47, 2001. - Formation of location-controlled crystalline islands using substrate-embedded-seeds in excimer-laser crystallization of silicon films
P.Ch. van der Wilt; B.D. van Dijk; G.J. Bertens; R. Ishihara; C.I.M. Beenakker;
Appl. Phys. Lett.,
Volume 72, Issue 12, pp. 1819, 2001. - Heterogeneous Nucleation from Molten-Si Induced by Excimer-Laser Melting of Si Thin-Films
R. Ishihara; F. C. Voogt;
In Polycrystalline Semiconductors VI - Bulk Materials, Thin Films, and Devices,
Switzerland, Scitech Publ., 2001. - Si Based Thin-Film Filter with High Visible-Over-UV Selectivity for Biochemical Fluorescence Analysis
V.P. Iordanov; G.W. Lubking; R. R. Ishihara; R.F. Wolffenbuttel; P.M. Sarro; M.J. Vellekoop;
In The 11th Intern. Conf. on Solid-State Sensors and Actuators (Transducers 01),
Munich, Germany, pp. 1182-1185, Jun. 2001. ISBN 3-540-42150-5. - Excimer-Laser Lateral Crystallization Scenario of Silicon Thin Films by Phase-Field Modelling
A. Burtsev; M. Apel; R. Ishihara;
In Proceeding for 4th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE),
Veldhoven, pp. 8-12, 2001.
document - Properties of a Poly-Si Film Grown from a Grid of Grain Filters by Excimer-Laser Crystallization
P.Ch. van der Wilt; B.D. van Dijk; G.J. Bertens; R. Ishihara;
In Proc. SAFE 2001,
Veldhoven, The Netherlands, pp. 1-8, Nov. 2001.
document - Effects of Grain-Boundaries in Excimer-Laser Crystallized Poly-Si Thin-Film Transistors
R. Ishihara;
In Proc. 31st Euro. Solid State Device Res. Conf.,
Nuremberg, Germany, pp. 479-482, Sep. 2001. - Advanced Excimer-Laser Crystallization Techniques of Si Thin-Film for Location Control of Large Grain on Glass
R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; F.C. Voogt; G.J. Bertens; J.W. Metselaar; C.I.M. Beenakker;
In Proc. SPIE Flat Panel Display Technology and Display Metrology II,
pp. 14-23, 2001. - Study of Crystal Growth in Grain-Filters for Location-Controlled Excimer-Laser Crystallization
P.C. van der Wilt; B.D. van Dijk; G.J. Bertens; R. Ishihara;
In Advanced Materials and Devices for Large-Area Electronics (Mat. Res. Soc. Proc.),
2001. - Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization
B.D. van Dijk; P.Ch. van der Wilt; G.J. Bertens; L.K. Nanver; R. Ishihara;
In Advanced Materials and Devices for Large-Area Electronics (Mat. Res. Soc. Proc.),
2001. - Location-Control of Large Si Grains by Dual-Beam Excimer-Laser and Thick Oxide Portion
R. Ishihara; A. Burtsev; P. F. A. Alkemade;
Jpn. Journal of Applied Physics,
Volume 39, pp. 3872-3878, 2000. ISSN 0021-4922. - Enlargement of Location Controlled Si Grain by Dual-Beam Excimer-Laser Melting with Bump Structure
A. Burtsev; R. Ishihara;
Applied Surface Science 154-155,
pp. 152-158, 2000. ISSN 0169-4332. - Energy Density Window for Location-Controlled Si Grains by Dual-Beam Excimer-Laser
A. Burtsev; R. Ishihara;
In Proc. SAFE 2000,
Veldhoven, 29 november-1 december, pp. 15-22, 2000. ISBN 90-73461-24-3. - Temperature-Gradient Driven Directional Solidification of Si thin-film by Excimer-Laser Melting
R. Ishihara;
In Proc. of The Int. Workshop on Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials,
2000. - Processing window for location-controlled Si grains by dual-beam excimer-laser
A. Burtsev; R. Ishihara;
In Proc. SAFE 2000,
Veldhoven, The Netherlands, 2000. - Effects of Grain-Boundaries on Excimer-Laser Crystallized Poly-Si Thin-Film Transistors
R. Ishihara;
In Proc. International Workshop on Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials,
Tokyo, Japan, pp. 259-260, Jul. 2000. - Location Control of Laterally Columnar Si Grains by Dual-Beam Excimer-Laser Melting of Si Thin-Film
R. Ishihara;
In Proc. Mat. Res. Soc.: Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays,
2000. - Location-Controlled Large-Grains in Near-Agglomeration Excimer-Laser Crystallized Silicon Films
P.C. van der Wilt; R. Ishihara; J. Bertens;
In Proc. Mat. Res. Soc.: Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays,
2000. - Dual-beam Excimer-Laser Induced Si Grain Size Enlargement in an a-Si/Structured SiO2/Metal Stack
A. Burtsev; R. Ishihara;
In Jean Pierre Veen (Ed.), SAFE 99,
Mierlo, The Netherlands, 24, STW Technology Foundation, pp. 665-670, 1999. ISBN 90-73461-18-9. - Modelling of Thin-Film Transistors in a Polycrystalline Silicon Layer with Large Grains
A.J.G. Spiekerman; B.D. van Dijk; R. Ishihara;
In Proc. of the fourth Symposium on Thin Film Transistor Technologies, the Electrochemical Society,
Pennington, New Jersey, pp. 249-255, 1999. ISBN 1-56677-216-8. - Effects of Gate Oxide Deposition Methods on Excimer Laser Crystallized poly-Si Thin Film Transistors
B. van Dijk; J. Bertens; R. Ishihara;
In E. Lueder (Ed.), 19th International Display Research Conference, Euro Display 99,
Berlin, Germany, Society for Information Display, pp. 335-338, Sep. 1999. 3-8007-2478-2. - Microtexture Analysis of Location Controlled Large Si Grain Formed by Excimer-Laser Crystallization Method
R. Ishihara; P.F.A. Alkemade;
In 1999 International Workshop on Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials -,
Tokyo, Japan, The Japan Societies of Applied, pp. 99-102, Jul. 1999. - Werkwijze voor het vervaardigen van dunne films polykristallijn silicium en volgens die werkwijze vervaardigde films
P.C. van der Wilt; R. Ishihara;
Nederlandse Octrooiaanvraag nr. 1013790, Dec 1999. - Grain Location-Control in Excimer-Laser Crystallised Thin Silicon Films
P. Ch. van der Wilt; R. Ishihara;
Physica Status Solidi (a),
Volume 166, Issue 2, pp. 619-627, 1998. - Location Control of Crystal Si Grain Followed by Excimer-Laser Melting of Si Thin-Films
R. Ishihara; P.Ch. van der Wilt;
Jpn.J.Appl.Phys.,
Volume 37, pp. L15-L17, Jan. 1998. - Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
R. Ishihara; A. Burtsev;
Japan. J. Appl. Phys,
Volume 37, Issue 1, pp. 1071-1075, 1998. - Location Controlled Large Silicon Grains for New Large Area Applications
R. Ishihara;
In Jean Pierre Veen (Ed.), SAFE 98,
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B.D. van Dijk; R. Ishihara;
In Proc. of SAFE '98,
Mierlo, pp. 143-145, 1998. - Grain Matrix Made with Excimer-Laser Crystallization of Thin Silicon Films
P. Ch. van der Wilt; R. Ishihara;
In Polycrystalline Semiconductors V, - Bulk Materials, Thin Films and Devices-, Proceedings of the Fifth International Conference,
Schwabisch Gmund, Germany, Sept. 1998. - Excimer-laser-produced single-crystal silicon thin-film transistors
R. Ishihara; M. Matsumura;
Japanese Journal of Applied Physics,
Volume 36, pp. 6167-6170, 1997. - Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
R. Ishihara;
In the 1997 International Conference on Solid State Devices and Materials,
Hamamatsu, Japan, pp. 360-361, Sep. 1997. - Two-dimensional location confinement of crystal Si grain followed by excimer-laser melting of Si thin films
R. Ishihara; P.C. van der Wilt;
In International Conference on Advanced Materials and European Materials Research Society Spring Meeting,
Strasbourg, Jun. 1997. - Dual-beam excimer-laser irradiation of a-Si film on glass substrate
R. Ishihara; A. Burtsev;
In Ext. Abstr. 1997, Int. Conference on Solid State Devices and Materials,
Hamamatsu, pp. 360-365, 1997.