prof.dr.ir. J.W. Slotboom

Parttime Professor
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

Expertise: Silicon device-technologies

Biography

Jan W. Slotboom (M 82) was born in Utrecht, The Netherlands, on December 26, 1942. He received the degree of electrical engineering from the Technical University of Delft, The Netherlands in 1966. In 1967 he joined the Philips Research Laboratories in Eindhoven, the Netherlands, where he worked on bipolar device modeling, numerical simulation and experimental silicon device physics. In 1977 the received the Ph.D. degree from the Technical University of Eindhoven on a thesis about 2D-numerical device simulation of bipolar transistors and pioneering experiments on bandgap-narrowing in heavily-doped silicon. He was involved in the development of CCD memories for video applications and exploratory research of high-density memories. His current activities are research of novel silicon device-technologies. Jan has authored and co-authored more than 70 papers and 17 US patents. In 1994 he became a part-time professor at the Delft Institute of Microelectronics and Submicron Technology (DIMES) of the Technical University of Delft.

Publications

  1. Thermally induced current bifurcation in bipolar transistors
    L. La Spina; N. Nenadovic; V. d'Alessandro; F. Tamigi; N. Rinaldi; L. K. Nanver; J. W. Slotboom;
    Solid-State Electronics,
    Volume 50, pp. 877-888, 2006.

  2. Electrothermal Characterization of Silicon-on-Glass VDMOSFETs
    N. Nenadovic; V. Cuoco; S.J.C.H. Theeuwen; L.K. Nanver; H. Schellevis; G. Spierings; H.F.F. Jos; J.W. Slotboom;
    Microelectronics Reliability,
    pp. 541-550, Mar. 2005.

  3. Electrothermal characterization of silicon-on-glass VDMOSFETs
    N. Nenadovic; V. Cuoco; A. Griffo; H. Schellevis; L. K. Nanver; J. W. Slotboom; S. J. C. H Theeuwen; H. F. F. Jos;
    IEEE-Microelectronics Reliability,
    Volume 45, Issue 3-4, pp. 541-550, Mar. 2005.

  4. Electrothermal Limitations on the Current Density of High-Frequency Bipolar Transistors
    Nebojsa Nenadovic; Lis K. Nanver; Jan W. Slotboom;
    IEEE Transactions on Electron Devices,
    Volume 51, Issue 12, pp. 2175-2180, Dec. 2004.

  5. A Back-Wafer Contacted Silicon-On-Glass Integrated Bipolar Process - Part II: A Novel Analysis of Thermal Breakdown
    N. Nenadovic; V. d Alessandro; L.K. Nanver; F. Tamigi; N. Rinaldi; J.W. Slotboom;
    IEEE Transactions on Electron Devices,
    Volume 51, Issue 1, pp. 51-62, Jan. 2004.

  6. A Back-Wafer Contacted Silicon-On-Glass Integrated Bipolar Process - Part I: The Conflict Electrical Versus Thermal Isolation
    L.K. Nanver; N. Nenadovic; V. d Alessandro; H. H. Schellevis; W. van Zeijl; R. Dekker; D.B. de Mooij; V. Zieren; J.W. Slotboom;
    IEEE Trans. on Electron Devices,
    Volume 51, Issue 1, pp. 42-50, Jan. 2004.

  7. Extraction and Modeling of Self-Heating and Mutual Thermal Coupling Impedance of Bipolar Transistors
    N. Nenadovic; S. Mijalkovic; L.K. Nanver; L.J.K. Vandamme; V. Alessandro; H. Schellevis; J.W. Slotboom;
    IEEE Journal of Solid-State Circuits,
    Volume 39, Issue 10, pp. 1764-1772, Oct. 2004. ISSN 0018-9200.

  8. RF power silicon-on-glass VDMOSFETs
    N. Nenadovic; V. Cuoco; S.J.C.H. Theeuwen; H. Schellevis; G. Spierings; A. Griffo; M. Pelk; L.K. Nanver; R.F.F. Jos; J.W. Slotboom;
    IEEE Electron Device Letters,
    Volume 25, Issue 6, pp. 424-426, Jun. 2004.

  9. A Novel SPICE Macromodel of BJTs Including the Temperature Dependence of High-Injection Effects
    V. Alessandro; N. Nenadovic; F. Tamigi; N. Rinaldi; L.K. Nanver; J.W. Slotboom;
    In Proc. 24th International Conference on Microelectronics (MIEL 04), Nis,
    pp. 253-256, May 2004. ISBN 0-7803-8166-1.
    document

  10. Electrothermal Characterization of Silicon-on-Glass VDMOSFETs
    N. Nenadovic; H. Schellevis; V. Cuoco; A. Griffo; S.J.C.H. Theeuwen; L.K. Nanver; R.F.F. Jos; J.W. Slotboom;
    In Proc. 24th International Conference on Microelectronics (MIEL 04), Nis,
    pp. 145-148, May 2004. ISBN 0-7803-8166-1.
    document

  11. Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistors
    F. Tamigi; N. Nenadovic; V. Alessandro; L.K. Nanver; N. Rinaldi; J.W. Slotboom;
    In Proc. 24th International Conference on Microelectronics (MIEL 04),
    Nis, Serbia and Montenegro, pp. 257-260, May 2004. ISBN 0-7803-8166-1.
    document

  12. Electrothermal limitations on the current density of high-frequency bipolar transistors
    N. Nenadovic; L.K. Nanver; J.W. Slotboom;
    In Proc. 19th International Symposium on Microelectronics Technology and Devices,
    Porto de Galinhas, Brazil, pp. 3-8, Sep. 2004. ISBN 1-56677-416-0.

  13. Extraction of Thermal Network Function for Bipolar RF Devices and Circuits
    N. Nenadovic; S. Mijalkovic; F. Tamigi; V. dAlessandro; L.K. Nanver; H. Schellevis; J.W. Slotboom;
    In XLVII ETRAN Conference,
    Herceg Novi, Serbia-Montenegro, pp. 225-228, Jun. 2003. ISBN 86-80509-48-5.
    document

  14. Thermal Impedance Extraction and Modeling for Different Silicon-on-Glass BJT Designs
    A. Rossi; V. Moschiano; F. Tamigi; N. Nenadovic; L.K. Nanver; J.W. Slotboom;
    In Proc. SAFE 2003,
    Veldhoven, The Netherlands, pp. 643-647, Nov. 2003. ISBN 90-73461-39-1.

  15. Thermal Management of Silicon-On-Glass MOS Field-Effect Transistors for RF-Power Applications
    A. Griffo; N. Nenadovic; V. Cuoco; L.K. Nanver; J.W. Slotboom;
    In Proc. SAFE 2003,
    Veldhoven, The Netherlands, pp. 1-8, Nov. 2003. ISBN 90-73461-39-1.

  16. Thermal Instability in Two-Finger Bipolar Transistors
    N.Nenadovic; V.dAlessandro; F. Tamigi; A. Rossi; A. Griffo; L.K. Nanver; J.W. Slotboom;
    In J. Franca; P. Freitas (Ed.), Proc. ESSDERC 2003,
    Estoril, Portugal, pp. 203-206, Sep. 2003. ISBN 0-7803-7999-3.

  17. Electrical characterization of silicon diodes formed by laser annealing of implanted dopants
    L.K. Nanver; J. Slabbekoorn; A. Burtsev; T.L.M. Scholtes; R. Surdeanu; F. Simon; H.J. Kalhert; J.W. Slotboom;
    In Proc. 203rd ECS,
    Paris, France, pp. 119-130, Apr. 2003. ISBN 1-56677-396-2.
    document

  18. Extraction and Modeling of Self-Heating and Mutual Thermal Coupling Impedance of Bipolar Transistors
    N. Nenadovic; S. Mijalkovic; L.K. Nanver; Vandamme; H. Schellevis; V. Alessandro; J. W. Slotboom;
    In 2003 BCTM,
    Toulouse, France, Sep. 2003.

  19. The Shrinking Bipolar Transistor
    J.W. Slotboom;
    In 2003 BCTM,
    Toulouse, France, Sep. 2003.

  20. Photo carrier generation in bipolar transistors
    J.H. Klootwijk; J.W. Slotboom; M.S. Peter; V. Zieren; D.B. de Mooy;
    IEEE Trans. on Electron Devices,
    Volume 49, Issue 9, pp. 1628-1631, Sept. 2002.

  21. CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer
    C.J. Ortiz; L.K. Nanver; W.D van Noort; T.L.M. Scholtes; J.W Slotboom;
    In Proc. 2002 International Conference on Microelectronic Test Structures (ICMTS 2002),
    Cork, Ireland, pp. 83-88, Apr. 2002. ISBN 0-7803-7464-9.

  22. Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors
    N. Nenadovic; L.K. Nanver; H. Schellevis; D. de Mooij; V. Zieren; J.W. Slotboom;
    In Proc. 2002 Int. Conference on Microelectronic Test Structures (ICMTS 2002),
    pp. 77-82, Apr. 2002. ISBN 0-7803-7464-9.

  23. CV-Doping Profiling of Shallow Junctions with an abrupt and Highly Doped Arsenic Doped Epilayer
    Ch.J. Ortiz; L.K. Nanver; T.L.M. Scholtes; J.W. Slotboom;
    In Proc. SAFE 2002,
    Veldhoven, The Netherlands, STW, pp. 75-80, Nov. 2002. ISBN 90-73461-33-2.

  24. VDMOS and LDMOS Transistors for RF-power Applications
    N. Nenadovic; V. Cuoco; V. Alessandro; S.J.C.H. Theeuwen; L.K. Nanver; H.F.F. Jos; J.W. Slotboom;
    In Proc. SAFE 2002,
    Veldhoven, The Netherlands, STW, pp. 61-68, Nov. 2002. ISBN 90-73461-33-2.

  25. High-performance Silicon-On-Glass VDMOS transistor for RF-power applications
    N. Nenadovic; V. Cuoco; M.P. van der Heijden; L.K. Nanver; J.W. Slotboom; S.J.C.H. Theeuwen; H.F. Jos;
    In Proc. ESSDERC 2002,
    Firenze, Italy, University of Bologna, pp. 379-382, Sep. 2002. ISBN 88-900847-8-2.

  26. Analytical formulation and electrical measurements of self-heating in silicon BJTs
    N. Nenadovic; V. ]Alessandro; L.K. Nanver; N. Rinaldi; H. Schellevis; J.W. Slotboom;
    In BCTM 2002,
    Monterey, CA, USA, pp. 24-27, Sept. 2002. ISBN 0-7803-7562-9.

  27. A novel vertical DMOS transistor in SOA technology for RF power applications
    N. Nenadovic; V. Cuoco; S.J.C.H. Theeuwen; L.K. Nanver; H.F.F. Jos; J.W. Slotboom;
    In 23rd International Conference on Microelectronics,
    Nis, Yugoslavia, pp. 159-162, May, 2002 2002. ISBN 0-7803-7235-2.

  28. Epitaxy and device behaviour of collector-up SiGe HBTs with a partial p-type collector
    L.C.M. van den Oever; L.K. Nanver; T.L.M. Scholtes; H.W. van Zeijl; W. van Noort; Q.W. Ren; J.W. Slotboom;
    Solid-State Electronics,
    Volume 45, Issue 11, pp. 1899-1904, 2001. ISBN: 0038-1101.

  29. Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions
    Q.W. Ren; L.K. Nanver; C.C.G. Visser; J.W. Slotboom;
    Journal of Materials Science: Materials Electronics,
    Volume 12, Issue 4-6, pp. 313-316, Apr. 2001. ISBN 0957-4522.

  30. Arsenic-spike epi-layer technology applied to bipolar transistors
    W.D. van Noort; L.K. Nanver; J.W. Slotboom;
    IEEE Tr. Electr. Dev.,
    Volume 48, Issue 11, pp. 2500-2505, 2001.

  31. Reduction of UHF power transistor distortion with a nonuniform collector doping profile
    W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1399-1406, Sept. 2001.

  32. Electrothermal characterization of NPNs fabricated in a backwafer contacted silicon-on-glass integrated bipolar process
    N. Nenadovic; L.K. Nanver; H. H. SchellevisW. van Zeijl; J.W. Slotboom;
    In Proceedings of SAFE 2001,
    Veldhoven, The Netherlands, pp. 123-131, 2001. ISBN: 90-73461-29-4.
    document

  33. Design of 200 GHz SiGe HBTs
    L.C.M. van den Oever; L.K. Nanver; J.W. Slotboom;
    In Proc. 2001 Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 78-81, Sept. 2001. ISBN 0-7803-7019-8.

  34. Ultra shallow boron base profile with carbon implantation
    Magnee; P.H.C.; Kemmeren; A.L.A.M.; Cowern; N.E.B.; J.W. Slotboom; R.J. Havens; Huizing; H.G.A;
    In Proc. of the 2001 Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 64-67, 2001.
    document

  35. Measurement and fabrication of sub-monolayer As and P concentrations on Si 100
    W.D. van Noort; C. Nieuwenhuizen; Q.W. Ren; L.K. Nanver; J.W. Slotboom;
    In Poster presentation 7th European Conference on Surface Crystallography and Dynamics,
    Leiden, The Netherlands, Aug. 2001.

  36. Base current tuning in SiGe HBTs by SiGe in the emitter
    Huizing; H.G.A.; Klootwijk; J.H.; Aksen; E.; J.W. Slotboom;
    In IEDM 2001,
    Washington DC, USA, pp. 40.5.1 -40.5.4, Dec. 2001.

  37. Thermal issues in a backwafer contacted silicon-on-glass integrated bipolar process
    N. Nenadovic; L.K. Nanver; H. H. SchellevisW. van Zeijl; J.W. Slotboom;
    In G.E. Ponchak (Ed.), 2001 Topical Meeting on Silicon Monolithic Integrated Circuits RF Systems,
    Ann Arbor, MI, USA, pp. 114-121, Sep. 2001. ISBN 0-7803-7129-1.
    document

  38. Control of Arsenic Doping during Low-Temperature CVD Epitaxy of Silicon (100)
    W.D. van Noort; L.K. Nanver; J.W. Slotboom;
    J. of the Electrochemical Society,
    Volume 147, Issue 11, pp. 4301-4304, 2000.

  39. A better insight into the performance of silicon BJTs featuring highly nonuniform collector doping profiles
    P. Palestri; C. Fiegna; L. Selmi; Peter; M.S.; G.A.M. Hurkx; J.W. Slotboom; E. Sangiorgi;
    IEEE Trans. Electr. Dev.,
    Volume 48, Issue 5, pp. 1044-1051, May 2000.

  40. 7781af6e4ower added efficiency surface-mounted bipolar power transistors for low-voltage wireless applications
    R. Dekker; D.M.H. Hartskeer; H.G.R. Maas; F. Van Rijs; J.W. Slotboom;
    BCTM,
    pp. 191-194, 2000.

  41. Reduction of distorsion with a non-uniform BJT collector doping profile
    W.D. van Noort; L.C.N. de Vreede; H.F.F. Jos; L.K. Nanver; J.W. Slotboom;
    In Proceedings SAFE 2000,
    Veldhoven, pp. 113-118, 2000.

  42. Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base
    M.R. van den Berg; L.K. Nanver; C.R. de Boer; C.C.G. Visser; J.W. Slotboom;
    In Proceedings of the 30th ESSDERC,
    Cork, Ireland, pp. 612-615, Sept. 2000.

  43. A Bipolar Structure with a Tunnelling Emitter
    M.R. van den Berg; L.K. Nanver; C.R. de Boer; C.C.G. Visser; J.W. Slotboom;
    In Proceedings SAFE 2000,
    Veldhoven, pp. 11-14, 2000.

  44. Analysis of the emitter charge storage in SiGe heterojunction bipolar transistors with a lightly doped emitter
    L.C.M. van den Oever; L.K. Nanver; J.W. Slotboom;
    In Proceedings of the 30th ESSDERC,
    Cork, Ireland, pp. 568-571, Sept. 2000.
    document

  45. Reduction of UHF power distortion with a non-uniform collector doping profile
    W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
    In Proceedings of the 2000 BCTM,
    Minneapolis, Minnesota, Sept 24-26, 2000, pp. 126-129, 2000. ISBN 0-7803-6384-1/-X/-8.

  46. Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions
    Q.W. Ren; L.K. Nanver; C.C.G. Visser; J.W. Slotboom;
    In Proceedings 3rd Int. Conf. on Materials for Micro-electronics,
    Dublin, Ireland, pp. 97-100, Oct., 2000 2000.

  47. Current transport in the ultra-shallow abrupt Si and SiGe diodes
    Q.W. Ren; L.K. Nanver; J.W. Slotboom;
    In Proc. SAFE 2000,
    Veldhoven, The Netherlands, pp. 113-118, Nov. 2000.

  48. Electrical and Physical Properties of Polysilicon Film Resistors Modified by Excimer Laser Annealing
    F.M. Soares; M.R. van den Berg; L.K. Nanver; C.C.G. Visser; K. Grimm; J.W. Slotboom;
    In Proc. 3rd Int. Conf. on Materials for Microelectronics,
    Ireland, pp. 235-238, Oct. 2000.

  49. On the reliability of SiGe microwave power heterojunction bipolar transistor
    Jinshu Zhang; Pei-Hsin Tsien; Peiyi Chen; L.K. Nanver; J.W. Slotboom;
    In 2000 IEEE Hong Kong Electron Devices Meeting,
    pp. 90-93, 2000.

  50. Metal/silicon Schottky barrier lowering by RTCVD interface passivation
    Q.W. Ren; W. van Noort; L.K. Nanver; J.W. Slotboom;
    In 197th Meeting of the Electrochemical Society,
    Toronto, Canada, pp. 161-166, May 2000.

  51. Bipolar transistor epilayer design using the MAIDS mixed-level simulator
    L.C.N. de Vreede; H.C. de Graaff; Willemen; J.A.; W. van Noort; Jos; R.; Larson; L.E.; J.W. Slotboom; J.L. Tauritz;
    IEEE J. Solid-State Circuits,
    Volume 34, Issue 9, pp. 1331-1338, Sept. 1999.

  52. As peaks in Si 100 films fabricated with rapid thermal epitaxy
    W. van Noort; L.K. Nanver; C.C.G. Visser; A. van den Bogaard; J.W. Slotboom;
    In F. Roozeboom; e.a. (Ed.), Symp. Advances Rapid Thermal Processing,
    New Jersey, The Electrochemical Society, pp. 335-342, 1999. ISBN 1-56677-232-X.

  53. As peaks in Si 100 films fabricated with rapid thermal epitaxy
    W. van Noort; L.K. Nanver; C.C.G. Visser; A. van den Bogaard; J.W. Slotboom;
    In D.J. Meyer (Ed.), Proceedings of the Second International Epsilon Users Group Meeting: Si1-xGex and Low Temperature Si Epitaxy,
    San Jose, CA, May 1999.

  54. Al contacts to very shallow junctions
    Q.W. Ren; L.K. Nanver; C.C.G. Visser; J.W. Slotboom;
    In Proc. SAFE 1999,
    Mierlo, The Netherlands, pp. 719-722, Nov. 1999.

  55. Epitaxial Arsenic Doping of Si BJT Collectors
    W.D. van Noort; L. K. Nanver; J.W. Slotboom;
    In Proc. of SAFE 99,
    Mierlo, pp. 747-752, 1999. ISBN 90-73461-18-9.

  56. Large signal Modeling and Verification of Silicon RF Power Transistors
    R. Tinti; K. Mouthaan; H.C. de Graaff; R. Tuijtelaars; M. Versleijen; J. Slotboom; J.L. Tauritz;
    In ESSDERC,
    Leuven, pp. 664-667, Sept. 1999.

  57. Impact ionization and neutral base recombination in SiGe HBTs
    Peter; M.S.; J.W. Slotboom; Terpstra; D;
    In BCTM,
    pp. 58-61, 1999.

  58. Ultra-low-temperature low-ohmic contacts for SOA applications
    L.K. Nanver; H.W. van Zeijl; H. Schellevis; R.J.M. Mallee; J. Slabbekoorn; R. Dekker; J.W. Slotboom;
    In 1999 Bipolar/BiCMOS Circuits and Technology Meeting,
    Minneapolis, pp. 137-140, Sept. 1999. ISBN 0-7803-5712-4.

  59. Optimisation of the base-collector doping profile for high-frequency distortion
    W. van Noort; L.C.N. de Vreede; L.K. Nanver; H.C. de Graaff; J.W. Slotboom;
    In Proc. 28th ESSDERC,
    France, pp. 496-499, Sep. 1998.

  60. Doping of polysilicon emitters by excimer laser-annealing
    M.R. van den Berg; L.K. Nanver; Q.W. Ren; C.C.G. Visser; R.J.M. Mallee; J.W. Slotboom;
    In Proc. SAFE 1998,
    Mierlo, The Netherlands, pp. 27-30, Nov. 1998.

  61. Buried boron layers as extrinsic base in inverse SiGe HBTs
    L.C.M. van den Oever; T.L.M. Scholtes; L.K. Nanver; H. Lifka; J.W. Slotboom;
    In Proc. of SAFE,
    Mierlo, pp. 435-439, 1998.

  62. Microwave modelling and measurement of prematch circuitry for RF power transistors
    K. Mouthaan; R. Tinti; H.C. de Graaff; J.L. Tauritz; J. Slotboom;
    In MTT-S European Wireless 98,
    Amsterdam, pp. 198-203, Oct. 1998.

  63. Modelling and measurement of electro-thermal interaction in RF bipolar power transistors
    K. Mouthaan; R. Tinti; H.C. de Graaff; J.L. Tauritz; J. Slotboom;
    In IEEE Silicon Monolithic Integrated Circuits RF Systems Meeting,
    Ann Arbor, pp. 47-56, Sep. 1998.

  64. Energy dependent electron and hole impact ionization in Si bipolar transistors
    P. Palestri; L. Selmi; G.A.M. Hurkx; J.W. Slotboom; E. Sangiorgi;
    In IEDM 1998,
    pp. 885-888, 1998.

  65. Optimization guidelines for epitaxial collectors of advanced BJTs with improved breakdown voltage and speed
    P. Palestri; C. Fiegna; L. Selmi; G.A.M. Hurkx; J.W. Slotboom; E. Sangiorgi;
    In IEDM 1998,
    pp. 741-744, 1998.

  66. Optimum dimensions of the epilayer for third-order intermodulation distortion
    L.C.N. de Vreede; W. van Noort; H.F.F. Jos; H.C. de Graaff; J.W. Slotboom; J.L. Tauritz;
    In Proc. Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 168-171, Sept. 1998.

  67. Inverse SiGe heterojunction bipolar transistor
    L.C.M. van den Oever; L.K. Nanver; C.C.G. Visser; T.L.M. Scholtes; R.J.E. Hueting; J.W. Slotboom;
    In Proceedings of the 27th ESSDERC,
    Stuttgart, Germany, pp. 450-453, Sept. 1997.

  68. MAIDS: A microwave active integral device simulator
    L. de Vreede; W. van Noort; H.C. de Graaff; J.L. Tauritz; J. Slotboom;
    In Proceedings of the 27th ESSDERC,
    Stuttgart, Germany, pp. 108-111, Sept. 1997.

  69. Thermal resistance modelling of RF high power bipolar transistors
    K. Mouthaan; R. Tinti; A. Arno; H.C. de Graaff; J.L. Tauritz; J. Slotboom;
    In ESSDERC 97,
    Stuttgart, pp. 184-187, Sep. 1997.

  70. Microwave modelling and measurement of the self- and mutual inductance of coupled bondwires
    K. Mouthaan; R. Tinti; M. de Kok; H.C. de Graaff; J.L. Tauritz; J.W. Slotboom;
    In Proc. Bipolar/BiCMOS Circuits and Technology Meeting,
    Minneapolis, USA, pp. 166-169, Sep. 1997.

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Last updated: 7 Oct 2020

Jan Slotboom

Alumnus
  • Left in 2005
  • Now: Emeritus Professor