dr. Sberna

Electronic Components, Technology and Materials (ECTM), Department of Microelectronics


Paolo Maria Sberna was born in Palermo (Sicily - Italy) in 1987. In 2009 he received the bachelor degree in physics (cum laude) at the University of Catania (Italy) with a thesis on Bose-Einstein condensation. In 2011 he received the master degree in physics (cum laude) at the University of Catania with the thesis: �Quantum confinement effects on Si nano-crystals observed with Raman spectroscopy�. In 2015, he completed the PhD, at the University of Catania and partly at the NOVA University of Lisbon (Portugal), with the thesis: �Novel Approaches to Photoactive Nanostructured Materials for Efficient Solar Cells�. From May 2015 he is working on low-temperature Si thin-film transistors fabrication by solution-processing in the group of Professor Ryoichi Ishihara.


  1. Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators
    B. T. Buijtendorp; J. Bueno; D. J. Thoen; V. Murugesan; P. M. Sberna; J. J. A. Baselmans; S. Vollebregt; A. Endo;
    In Proc. SPIE 11453, Millimeter, Submillimeter, and Far-Infrared Detectors and Instrumentation for Astronomy X,

  2. Vacuum Assisted Liquified Metal (VALM) TSV Filling Method With Superconductive Material
    J.A. Alfaro; P.M. Sberna; C. Silvestri; M. Mastrangeli; R. Ishihara; P.M. Sarro;
    In 31th IEEE International Conference on Micro Electro Mechanical Systems (MEMS),
    2018. DOI: 10.1109/MEMSYS.2018.8346611

  3. Solution-Processed LTPS on Paper
    Ryoichi Ishihara; Miki Trifunovic; Paolo Sberna; Tatsuya Shimoda;
    In Proceeding of IDW �15, The 22nd International Display Workshop,

BibTeX support

Last updated: 9 Mar 2019

Paolo Sberna

  • Left in 2017
  • Now: Else Kooi Laboratory