Anodic Alumina Oxide as hard mask for graphene nanomesh fabrication

To take full advantage of the functionality of 2D materials, precise engineering of structural defects are crucial. Periodically ordered nano-perforated graphene structures lead to the formation of a graphene nanomesh (GMN). In this configuration, defects can be considered as structural arrangements that can be exploited for specific functionalities, rendering the GMN a promising material for the implementation in a broad range of applications such as electrochemical and optical sensing, filtration, electronics devices, energy conversion/storage or catalysis.

Large-area GMN has been prepared using AAO membrane as an etch mask in which a plasma process is applied to etch the exposed graphene surfaces selectively. The reported works place the AAO on top of the graphene films. However, AAO is a brittle material that complicates their manipulation. Besides, bad contact on the interphase of the AAO/graphene can induce inhomogeneous etching structures. Here we aim to form AAO directly on top of graphene.

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Assignment

• Sputtering aluminium layer on top of a graphene film.
• Stop pore growth formation close to the graphene.
• Evaluate the film thickness on the graphene etching.
• Monitor the graphene quality through the process.
• Electrical measurements on GMN.

The activities will take place at both EKL and the labs at the PME department of 3mE in collaboration with Ivan Buijnsters.

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Last modified: 2023-12-05