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Recent publications:

  1. A Fully Integrated Sequential Synchronized Switch Harvesting on Capacitors Rectifier Based on Split-Electrode for Piezoelectric Energy Harvesting
    Xinling Yue; Jiarui Mo; Zhiyuan Chen; Sten Vollebregt; Guoqi Zhang; Sijun Du;
    IEEE Transactions on Power Electronics,
    Volume 39, Issue 6, pp. 7643-7653, 2024.

  2. Measuring residual stresses in individual on-chip interconnects using synchrotron nanodiffraction
    Yaqian Zhang; Leiming Du; Olof Bäcke; Sebastian Kalbfleisch; Guoqi Zhang; Sten Vollebregt; Magnus Hörnqvist Colliander;
    Applied Physics Letters,
    Volume 124, pp. 083501-1-6, 2024.

  3. Surface modification of multilayer graphene neural electrodes by local printing of platinum nanoparticles using spark ablation
    Nasim Bakhshaee Babaroud; Samantha J. Rice; Maria Camarena Perez; Wouter A. Serdijn; Sten Vollebregt; Vasiliki Giagka;
    Nanoscale,
    Volume 16, pp. 3549-3559, 2024.

  4. Highly-sensitive wafer-scale transfer-free graphene MEMS condenser microphones
    Roberto Pezone; Sebastian Anzinger; Gabriele Baglioni; Hutomo Suryo Wasisto; Lina Sarro; Peter Steeneken; Sten Vollebregt;
    Microsystems & Nanoengineering,
    Volume 10, Issue 27, pp. 1-9, 2024.

  5. Effect of air-loading on the performance limits of graphene microphones
    R. Pezone; G. Baglioni; C. Van Ruiten; S. Anzinger; H. S. Wasisto; P. M. Sarro; P. G. Steeneken; S. Vollebregt;
    Applied Physics Letters,
    Volume 124, Issue 12, 2024.

  6. A high aspect ratio surface micromachined accelerometer based on a SiC-CNT composite material
    Jiarui Mo; Shreyas Shankar; Roberto Pezone; Guoqi Zhang; Sten Vollebregt;
    Microsystems & Nanoengineering,
    Volume 10, Issue 42, 2024.

  7. An Analog to Digital Converter in a SiC CMOS Technology for High-temperature Applications
    Jiarui Mo; Yunfan Niu; Alexander May; Mathias Rommel; Chiara Rossi; Joost Romijn; Guoqi Zhang; Sten Vollebregt;
    Applied Physics Letters,
    Volume 124, Issue 15, 2024.

  8. Centimeter-scale nanomechanical resonators with low dissipation
    Andrea Cupertino; Dongil Shin; Leo Guo; Peter G. Steeneken; Miguel A. Bessa; Richard A. Norte;
    Nature Communications,
    Volume 15, pp. 4255, 2024.

  9. Origin of the mm-submm loss in deposited dielectrics
    B.T. Buijtendorp; A. Endo; W. Jellema; K. Karatsu; K. Kouwenhoven; D. Lamers; A. J. van der Linden; K. Rostem; M. Veen; E. J. Wollack; J. J. A. Baselmans; S. Vollebregt;
    arXiv:2405.13688,
    2024.
    document

  10. Rectification in Ionic Field Effect Transistors Based on Single Crystal Silicon Nanopore
    Hao Hong; Xin Lei; Jiangtao Wei; Yang Zhang; Yulong Zhang; Jianwen Sun; Guoqi Zhang; Pasqualina M. Sarro; Zewen Liu;
    Advanced Electronic Materials,
    pp. 2300782, 2024.

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