Electronic Components, Technology and Materials
Department of Microelectronics

dr. J. Derakhshandeh

Postdoc
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

Expertise: Monolithic three dimensional integrated circuits

Biography

Jaber Derakhshandeh was born in 1974 in Tabriz, Iran. His bachelor, Master and PhD studies were all in electrical engineering from university of Tabriz, Sharif University of Technology and University of Tehran, Iran, respectively. During his studies he has worked on automating and repairing electronic systems, implementing an electron beam evaporation system, low temperature poly silicon thin film transistors and using carbon Nanotubes for lithography purposes. He has taught several under graduate courses in electronics engineering. In 2006 he joined to the ECTM, DIMES in TU Delft as Postdoc where he is currently working on monolithic three dimensional integrated circuits (3DIC), CMOS Image sensors, carbon Nanotubes and photodiodes.

Publications

  1. High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
    Negin Golshani; Jaber Derakhshandeh; C.I.M. Beenakker; R. Ishihara;
    Solid-State Electronics,
    Volume 105, pp. 6-11, 2015.

  2. Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics:
    Ryoichi ISHIHARA; Jin ZHANG; Miki TRIFUNOVIC; Jaber DERAKHSHANDEH; Negin GOLSHANI; Daniel M.R. TAJARI MOFRAD; Tao CHEN; Kees BEENAKKER; Tatsuya SHIMODA;
    IEICE Transactions on Electronics,
    Volume E97.C, Issue 4, pp. 227--237, 2014.

  3. Temperature Dependency of the Kinetics of PureB CVD Deposition over Patterned Si/SiO2 Surfaces
    V. Mohammadi; N. Golshani; K.R.C. Mok; W.B. de Boer; J. Derakhshandeh; L.K. Nanver;
    Microelectronic Engineering,
    Volume 125, pp. 45-50, 2014.

  4. Investigation of the Issues Arising by Lowering the Deposition Temperature of the PureB-layer on Si/SiO2 Surfaces
    V. Mohammadi; N. Golshani; K.R.C. Mok; W.B. de Boer; J. Derakhshandeh; L.K. Nanver and;
    In ICT.OPEN,
    Eindhoven, The Netherlands, Nov. 2013.

  5. Temperature Dependency of the Kinetics of PureB CVD Deposition over Patterned Si/SiO2 Surfaces
    V. Mohammadi; N.Golshani; K.R.C. Mok; W.B. de Boer; J. Derakhshandeh; L.K. Nanver and;
    In E-MRS 2013 Fall Meeting 2013,
    Warsaw, Poland, Sep 2013.
    document

  6. A novel silicon interposer for measuring devices requiring complex two-sided contacting
    J. Derakhshandeh; N. Golshani; L.A. Steenweg; W. van der Vlist; L.K. Nanver;
    In IEEE International Conference on Microelectronic Test Structures,
    Osaka, Japan, pp. 43-46, 2013.

  7. Silicon Drift Detectors for the detection of x-rays down to energies as low as 100 eV
    Negin Golshani; Jaber Derakhshandeh; Agata Sakic; Lis Nanver;
    In Micronano conference,
    Ede, The Netherlands, 2013.

  8. Monolithic 3D-ICs with single grain Si thin film transistors
    R. Ishihara; J. Derakhshandeh; M.R. Tajari Mofrad; T. Chen; N. Golshani; C.I.M. Beenakker;
    Solid-State Electronics,
    Volume 71, pp. 80-87, May 2012. DOI 10.1016/j.sse.2011.10.025.

  9. High-efficiency silicon photodiode detector for sub-keV electron microscopy
    A. Sakic; G. van Veen; K. Kooijman; P. Vogelsang; T.L.M. Scholtes; W.B. de Boer; J. Derakhshandeh; W.H.A. Wien; S. Milosavljevic; L.K. Nanver;
    IEEE Transactions on Electron Devices,
    Volume 59, Issue 10, pp. 2707-2714, Oct. 2012. DOI 10.1109/TED.2012.2207960.

  10. Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices
    L.K. Nanver; A. Sammak; V. Mohammadi; K.R.C. Mok; L. Qi; A. Sakic; N. Golshani; J. Derakhshandeh; T.M.L. Scholtes; W.D. de Boer;
    In ECS Trans. 2012: 27th Symposium on Microelectronics Technology and Devices (SBMicro2012),
    Brazil, Brasilia, pp. 25-33, Aug. 2012. DOI 10.1149/04901.0025ecst.

  11. Applications of PureB and PureGaB ultrashallow junction technologies
    L.K. Nanver; A. _akic; V. Mohammadi; J. Derakhshandeh; K.R.C. Mok; L. Qi; N. Golshani; T.M.L. Scholtes; W.B. de Boer;
    In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSCT 2012),
    Xi'an, pp. 303-306., Oct. 2012.
    document

  12. Monolithic 3D- ICs with Single Grain Si Thin Film Transistors
    R. Ishihara; M. R. T. Mofrad; J. Derakhshandeh; N. Golshani; C. I. M. Beenakker;
    In IEEE 11th International Conference on Solid-State and Integrated Circuit Technology,
    2012.

  13. Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes
    A. Sakic; T.L.M. Scholtes; W. de Boer; N. Golshani; J. Derakhshandeh; L.K. Nanver;
    Materials,
    Volume 4, Issue 12, pp. 2092-2107, Dec. 2011. DOI 10.3390/ma4122092.

  14. Monolithic 3D Integration of SRAM and Image Sensor Using Two Layers of Single Grain Silicon
    Jaber Derakhshandeh; Negin Golshani; Ryoichi Ishihara; Mohammad Reza Tajari Mofrad; Michael Robertson; Thomas Morrison; C.I.M Beenakker;
    IEEE Transactions on Electron Devices,
    Volume 58, Issue 11, pp. 3954-3961, 2011.

  15. Design and fabrication of single grain (SG) TFTs and lateral PIN photodiodes for low dose X-ray detection
    A. Arslan; R. Ishihara; J. Derakhshandeh; C.I.M. Beenakker;
    In Proc. of SPIE Medical Imaging Conference,
    Lake Buena Vista, Orlando, USA, pp. 79614N-1-79614N, Feb. 2011. DOI 10.1117/12.877959.
    document

  16. Monolithic 3D-ICs with single grain Si thin film transistors
    R. Ishihara; N. Golshani; J. Derakhshandeh; M.R. Tajari Mofrad; C.I.M. Beenakker;
    In Proc. 12th International Conference on Ultimate Integration on Silicon (ULIS),
    Cork, Ireland, pp. 1-4, Mar. 2011. ISBN 978-1-4577-0090-3; DOI 10.1109/ULIS.2011.5758004.

  17. Growth of high density aligned carbon nanotubes using palladium as catalyst
    S. Vollebregt; J. Derakhshandeh; R. Ishihara; M. Y. Wu; C. I. M. Beenakker;
    Journal of Electronic Materials,
    Volume 39, Issue 4, pp. 371-375, 2010.

  18. High speed 6T SRAM cells using single grain TFTs fabricated by ""angstrom""""micro""-Czochralski-Czochralski process at low temperature
    Negin Golshani; Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    Japanese Journal of Applied Physics (JJAP),
    2010.

  19. Patterned growth of carbon nanotubes for vertical interconnect in 3D integrated circuits
    S. Vollebregt; R. Ishihara; J. Derakhshandeh; W. Wien; J. van der Cingel; C.E.M. Beenakker;
    In Proc. of SAFE 2010,
    pp. 184-187, 2010.

  20. Monolithic 3D Integration of SRAM and Image Sensor Using Two Layers of Single Grain Silicon
    Negin Golshani; Jaber Derakhshandeh; Ryoichi Ishihara; C.I.M Beenakker; Michael Robertson; Thomas Morrison;
    In IEEE International Conference on 3D System Integration,
    Munich, Germany, 2010.

  21. Low Subthreshold Slope and High Mobility Single Grain Silicon TFTs Using Grown Oxide
    Negin Golshani; Jaber Derakhshandeh; Shu Yi Liu; Ryoichi Ishihara; J. Van der Cingel; C.I.M Beenakker;
    In EMRS,
    2010.

  22. Stacking of Single-Grain Thin-Film Transistors.
    M.R. Tajari Mofrad; J. Derakhshandeh; R. Ishihara; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
    Japanese journal of applied physics,
    Volume 48, 2009. ISSN 0021-4922.

  23. Monolithic Stacking of Single-Grain Thin-Film Transistors to realize high performance three dimensional integrated circuits
    M.R Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
    Japanese Journal of Applied Physics,
    Volume 48, 2009.

  24. Investigating Low Temperature High Density Aligned Carbon Nanotube and Nanofilament Growth using Palladium as Catalyst
    S. Vollebregt; J. Derakhshandeh; M.Y. Wu; R. Ishihara; C.I.M. Beenakker;
    In SAFE 2009,
    STW, pp. 125-128, 2009.

  25. Comparing Single Grain and Poly silicon Lateral PIN Photodiodes
    Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    In Proceedings of SAFE 2009,
    Veldhoven, Netherlands, 2009.

  26. High speed 6T SRAM cells using single grain TFTs fabricated by ""angstrom""""micro""-Czochralski process at low temperature
    Negin Golshani; Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    In Proceedings of SAFE 2009,
    Veldhoven, Netherlands, 2009.

  27. Growth of high density aligned carbon nanotubes using palladium as catalyst
    S. Vollebregt; J. Derakhshandeh; R. Ishihara; C.I.M. Beenakker;
    In Proceedings of Electronic Material conference 2009,
    USA, 2009.

  28. A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon
    M.R. Tajari Mofrad; A. La Magna; R. Ishihara; J. Derakhshandeh; J. van der Cingel; C.I.M. Beenakker;
    In Proceedings of E-MRS Symposium Q Laser and plasma processing for advanced materials E-MRS,
    pp. 1-4, 2009.
    document

  29. Monolithic 3D-ICs with Single Grain Si TFTs
    R. Ishihara; J. Derakhshandeh; M.R. Tajari Mofrad; T. Chen; C.I.M. Beenakker;
    In Proceedings of Active-Matrix and Flat Panel Displays 2009,
    Tokyo, Japan, 2009.
    document

  30. Fabrication of 6T SRAM cell using single grain TFTs obtained by ""angstrom""""micro""-Czochralski process
    Negin Golshani; R. Ishihara; J. Derakhshandeh; C.I.M Beenakker;
    In Proceedings of Active-Matrix and Flat Panel Displays 2009,
    Nara, Japan, 2009.
    document

  31. Simulation and Experimental study of crystallographic orientation control of 2D location controlled single grain crystalline silicon
    M.R. Tajari Mofrad; R. Ishihara; J. Derakhshandeh; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
    In Proc. of SAFE 2009,
    pp. 185-188, 2009.
    document

  32. Analog and digital output lateral photodiodes fabricated by ""angstrom""""micro""-Czochralski process at low temperature
    J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; C.I.M. Beenakker;
    In Proc. of DRC 2009,
    IEEE, pp. 93-94, 2009.
    document

  33. Single Grain Si TFTs for RF and 3DICs
    R. Ishihara; A. Baiano; T. Chen; J. Derakhshandeh; M.R. Tajari Mofrad; M. Danesh; N. Saputra; J. Long; C.I.M. Beenakker;
    In 2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT),
    Xian, China, 2009.

  34. CMP effect on the quality of thin silicon film crystallized by ""angstrom""""micro""-Czochralski process with excimer laser irradiation
    J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; J. van der Cingel; C.I.M Beenakker;
    In The 4th International Thin-Film Transistor Conference ITC 08,
    Seol, Korea, 2008.

  35. Monolithic Three-Dimensional Stacking of Integrated Circuits with a Low-Temperature Process
    Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; Ryoichi Ishihara; Kees Beenakker;
    In Proceedings of SAFE 2008,
    Velhoven, Netherlands, 2008.

  36. Optimizing Chemical Mechanical Polishing process in 3D-IC
    J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; J. Van der Cingel; C.I.M Beenakker;
    In Proceedings of SAFE 2008,
    Velhoven, Netherlands, 2008.
    document

  37. Monolithic Stacking of Single-Grain Thin-Film Transistors
    Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
    In Proceedings of Active-Matrix and Flat Panel Displays 2008,
    Tokyo, Japan, 2008.

  38. Monolithic 3D Integration of Single-Grain Si TFTs
    M.R. Tajari Mofrad; R. Ishihara; J. Derakhshandeh; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
    In Material Research Society Symposium Proceedings,1066,A20,2008,MRS Spring Meeting,
    San Francisco, CA, USA, 2008.

  39. Fabrication of Three-Dimensional Inverters Using the ""angstrom""""micro""-Czochralski
    Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
    In European Solid-State Device Research Conference 2008,
    Edinburgh, Scotland, 2008.

  40. A novel Carbon-Nanotube-based Nano-lithography technique to form nano-MOS devices
    J. Derakhshandeh; Y. Abdi; S. Mohajerzadeh;
    In International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN) 2007,
    2007.

  41. Nano-scale MOSFET Devices Fabricated Using a Novel Carbon-Nanotube-based Lithography
    J. Derakhshandeh; Y. Abdi; S. Mohajerzadeh; M. Beikahmadi; E.Arzi; M.D. Robertson; J.C.Bennett;
    In Material Research Society (MRS) spring meeting,
    San Francisco, CA, Mar. 2006.
    document

  42. Fabrication of 100nm Gate length MOSFET's using a novel carbon-nanotube-based nano-lithography
    J. Derakhshandeh; M. Beikahmadi; K. Baghban; Y. Abdi; S. Mohajerzadeh;
    In ICEE2006,
    Amirkabir University, Tehran, 2006.
    document

  43. Application of Encapsulated PECVED-grown Carbon Nano-Structure Field-Emission Devices in Nanolithography
    J. Koohsorkhi; Y. Adbi; S. Mohajerzadeh; J. Derakhshandeh; H. Hosseinzadegan; A. Khakifirooz;
    Nanotech,
    2005.

  44. PECVD-grown Carbon-nano-tubes on Silicon Substrates with an anomalous Nickel-seeded Tip-growth structure
    Y. Abdi; J. Koohsorkhi; J. Derakhshandeh; S. Mohajerzadeh; H. Hoseinzadegan; M.D. Robertson; C. Benet;
    Journal of Materials and Science Engineering C,
    2005.

  45. Fabrication of 100nm Gate length MOSFET's using a novel carbon-nanotube-based nano-lithography
    J. Derakhshandeh; Y. Abdi; S. Mohajerzadeh; H. Hosseinzadegan; E. Asl. Soleimani; H. Radamson;
    Journal of Materials and Science Engineering B,
    2005.

  46. Light Emitting Nano-porous silicon structures fabricated using a plasma hydrogenation technique
    Y. Abdi; J. Derakhshandeh; S. Mohajerzadeh; F. Nayeri; E. Arzi; M.D. Robertson;
    Journal of Materials and Science Engineering B,
    2005.

  47. Fabrication of 100nm Gate length MOSFET's using a novel carbon-nanotube-based nano-lithography
    18) J. Derakhshandeh; Y. Abdi; S. Mohajerzadeh; H. Hosseinzadegan; E. Asl. Soleimani; H. Radamson;
    In EMRS spring meeting 2005,
    2005.

  48. PECVD-grown Carbon-nano-tubes on Silicon Substrates with an anomalous Nickel-seeded Tip-growth structure
    Y. Abdi; J. Koohsorkhi; J. Derakhshandeh; S. Mohajerzadeh; H. Hoseinzadegan; M.D. Robertson; C. Benet;
    In EMRS spring meeting 2005,
    2005.

  49. A Precise Model for Leakage Power Estimation in VLSI Circuits
    J. Derakhshandeh; Nasser Masoumi; B.kasiri; Y.Farazmand; Akbarzadeh; S. Aghnoot;
    In Proceedings of the 9th International Database Engineering & Application Symposium (IDEAS'05),
    2005.
    document

  50. Low Temperature Metal-Free Fabrication of polycrystalline Si and Ge TFT's by PECVD Hydrogenation
    P. Hashemi; J. Derakhshandeh; B. Hekmatshoar; S. Mohajerzadeh; Y. Abdi; M.D. Robertson;
    In Material Research Society conference (MRS 2005),
    San Francisco CA, USA, pp. A22.2.1-A22.2.6, 2005.
    document

  51. Low temperature growth of nano-crystalline silicon and germanium using Rf hydrogen plasma with application in thin film transistors
    P. Hashemi; Y. Abdi; S. Mohajerzadeh; J. Derakhshandeh; B. Hekmatshoar; E. Arzi; M. D. Robertson;
    In Iran Phys. Conf.,
    Iran, Aug. 2005.

  52. Characterization of low temperature stress-induced crystallization of a-si on flexible glass substrate by Raman and transmission electron microscopy
    P. Hashemi; J. Derakhshandeh; S. Mohajerzadeh; M. D. Robertson; A. Shayan Arani; A. Afzali Kusha;
    In IEEE 17th Intl. Conf. on Microelectronics,
    Islamabad, Dec. 2005.

  53. A Precise Model for Leakage Power Estimation in VLSI Circuits
    J. Derakhshandeh; B. kasiri; Y. Farazmand; N. Masoumi; Akbarzadeh;
    In International Workshop on System on chip,
    Banff, Alberta-Canada, Jul. 2005.

  54. Emitting Nano-porous silicon structures fabricated using a plasma hydrogenation technique
    Y. Abdi; J. Derakhshandeh; S. Mohajerzadeh; F. Nayeri; E. Arzi; M.D. Robertson;
    In EMRS spring meeting 2005,
    2005.

  55. Stress-assisted nickel-induced crystallization of silicon on glass
    P. Hashemi; J. Derakhshandeh; S. Mohajerzadeh; M. Robertson; A. Tonita;
    Journal of Vacuum Science and Technology A (JVSTA),
    Volume 22, Issue 3, pp. 966-970, May 2004.

  56. Low-Temperature Stress-Assisted Nickel-Induced Crystallization of Silicon on Glass
    J. Derakhshandeh; P. Hashemi; S. Mohajerzadeh; A. Khajooeizadeh;
    In Iran Physics Conference,
    Tehran, Iran, Sep. 2004.

  57. The Investigation of Stress-Assisted Nickel-Induced Crystallization of Silicon on Glass by TEM and SEM
    P. Hashemi; J. Derakhshandeh; S. Mohajerzadeh; M. Robertson; A. Tonita;
    In The 31st Annual Meeting of the Microscopical Society of Canada May,
    2004.

  58. Race-free CMOS pass-gate charge recycling logic (FCPCL) for low power applications
    A. Abbasian; S.H. Rasouli; J. Derakhshandeh; A. Afzali-Kusha; M. Nourani;
    In Proceeding of the 2003 south west symposium on mixed signal design,
    Las Vegas, USA, pp. 87-89, Feb. 2003.

  59. Stress-assisted Nickel-Induced Crystallization of Silicon on Glass
    P. Hashemi; A. Khajooeizadeh; S. Mohajerzadeh; J. Derakhshandeh; M. Robertson; J.C. Bennett;
    In 11th Canadian Semiconductor Technology Conference (CSTC),
    Ottawa, Canada, Aug. 2003.

  60. Current Assisted Germanium Induced Crystallization of amorphous silicon on glass
    J. Derakhshandeh; N. Golshani; S. Mohajerzadeh;
    Journal of Thin Solid Films,
    2002.

  61. Metal free Germanium Induced Crystallization of a-Si on glass
    A. Akhavan; L. Rezaee; S. Mohajerzadeh; J. Derakhshandeh;
    In MRS,
    2002.

  62. Low temperature Germanium Induced Crystallization of silicon in the presence of electric current
    J. Derakhshandeh; N. Golshani; S. Mohajerzadeh;
    In EMRS,
    2002.

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Last updated: 16 Jun 2014

Jaber Derakhshandeh

Alumnus