S.M. Evseev

PhD student
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics


Promotor: Lis Nanver

Expertise: DC and microwave device simulations and measurements

Biography

A motivated and enthusiastic semiconductor process reliability physicist with project manager skills having a 10-year intensive experience in a full range of front-end failure mechanisms with a recent emphasis on Smart Power and High Voltage devices. My strong understanding of reliability physics and device physics concepts is connected to the knowledge of process integration. I have an extensive electrical characterization experience on wafer and package levels in a variety of materials (including wide band gap materials) resulted in a number of scientific publications and a deep knowledge of DC and microwave device simulations and measurements.

Publications

  1. Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses
    Evseev, S; Nanver, LK; Rejaei Salmassi, B; Milosavljevic, S;
    Microelectronic Engineering,
    Volume 125, pp. 2-7, 2014.

  2. Surface-charge-layer sheet-resistance measurements for evaluating interface RF losses on high-resistivity-silicon substrates
    S.B. Evseev; L.K. Nanver; S. Milosaviljevi_;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 11, pp. 3542-3550, Nov. 2012. DOI 10.1109/TMTT.2012.2215050.

  3. Eyring acceleration model in thick nitride/oxide dielectrics
    S. B. Evseev;
    Microelectronics Reliability,
    Volume 47, Issue 4-5, pp. 748-751, Apr. 2007.

  4. Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates
    S. B. Evseev; L. K. Nanver; S. Milosavljevic;
    In Proc. IEEE International Conference on Microelectronic Test Structures, ICMTS,
    Austin, USA, pp. 3-8, 2006. ISBN 1-4244-0167-4.

BibTeX support

Last updated: 16 Jun 2014

Serge Evseev

Alumnus