Electronic Components, Technology and Materials
Department of Microelectronics

dr. M. Saadaoui

Postdoc
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

Expertise: Copper electroplating in High aspect ratio TSV for System In Packages

Biography

Mohamed Saadaoui received the B. S. degree in electrical engineering from Faculty of Sciences and Technology, Mohammadia, Morocco in 2000, and the M. S. degree in Microsystems and Microtechnology from National Institute of Applied Sciences (INSA), Rennes, France in 2001. In 2006, he received his Ph.D. degree in electrical engineering from Paul Sabatier University of Toulouse, France. His doctoral thesis concerned the design and technological optimization of RF-passive components on membranes. In 2006, he joined Electronics Components, Technology and Materials laboratory of TU-Delft where he was involved in the study of copper electroplating in High aspect ratio TSV for System In Packages. In 2008, he joined Microelectronics Center of Provence (CMP), part of Ecole Nationale Superieure des Mines de Saint-Etienne (ENSM-SE) as a researcher. His current research interests include printed electronics and advanced 3D electronics packaging for flexible substrates.

Publications

  1. Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride or PE-ALD titanium nitride for void-free bottom-up copper electroplating
    M. Saadaoui; H. van Zeijl; W.H.A. Wien; H.T.M. Pham; C. Kwakernaak; H.C.M. Knoops; W.M.M. Erwin Kessels; R.M.C.M. van de Sanden; F.C. Voogt; F. Roozeboom; P.M. Sarro;
    IEEE Transactions on Components, Packaging and Manufacturing Technology,
    Volume 1, Issue 11, pp. 1728-1738, 2011. DOI 10.1109/TCPMT.2011.2167969.

  2. Oxidized ALD-deposited titanium nitride films as a low-temperature alternative for enhancing the wettability of through-silicon vias
    M. Saadaoui; H.W. van Zeijl; H.T.M. Pham; H.C. Knoops; W.M.M. Kessels; M.C.M. van de Sanden; F. Roozeboom; Y. Lamy; K.B. Jinesh; W. Besling; P.M. Sarro;
    In MRS Proceedings Volume 1112, Materials and Technologies for 3-D Integration,
    Warrendale, PA, pp. 1-8, 2009.

  3. Local Sealing of High Aspect Ratio Vias for Single Step Bottom-up Copper Electroplating of Through Wafer Interconnects
    M. Saadaoui; W. Wien; H. V. Zeijl; H. Schellevis; M. Laros; P. M. Sarro;
    In B.Mizaikoff; P.J. French (Ed.), Proc. IEEE Sensors 2007 Conf,
    Atlanta, Georgia, USA, IEEE, pp. 974-977, Oct. 2007.

  4. Improvement of wettability of silicon nitride in PECVD environment for copper electrodeposition in HAR vias
    M. Saadaoui; W. Wien; H. van Zeijl; A. van den Bogaard; P.M. Sarro;
    In Proc SAFE & Prorisc 2004,
    Veldhoven, The Netherlands, STW, pp. 543-546, Nov. 2007.

BibTeX support

Last updated: 16 Jun 2014

Mohamed Saadaoui

Alumnus
  • Left in 2008
  • Now: Ecole Nationale Superieure des Mines de Saint-Etienne (France)
  • Personal webpage