Electronic Components, Technology and Materials
Department of Microelectronics

dr. M.L. Popadic

Postdoc
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

PhD thesis (Jul 2010): Silicon doping techniques using chemical vapor dopant deposition
Promotor: Lis Nanver

Themes: MEMS Technology

Biography

Milos Popadic was born in Belgrade, Serbia in 1981. In 2004 he was a summer student of Prof. M. Heiblum at the Weizmann Institute of Science, Israel, where he collaborated on a project in the field of quantum transport. He received the MSc degree in Electrical Engineering from the University of Belgrade, Serbia in 2005, specializing in the field of optoelectronics and laser engineering.

Since 2005 he is with the ECTM laboratory and the DIMES institute of Delft University of Technology, where he obtained a Ph.D. in 2009, in the group of Prof. L.K. Nanver. His doctoral research was on doping techniques based on dopant CVD, Si epitaxy, modeling of ultrashallow junctions and C-V profiling.

He is currently working on characterization and modeling of capacive sensors for ink-jet devices in the MEMS group of Prof. P.M. Sarro.

Publications

  1. C-V profiling of ultra-shallow junctions using step like background profiles
    M. Popadic; V. Milovanovic; C. Xu; F. Sarubbi; L.K. Nanver;
    Solid-state electronics,
    Volume 54, Issue 9, pp. 890-896, 2010.

  2. Deep p+ junctions formed by drive-in from pure boron depositions.
    P. Maleki; T.L.M. Scholtes; M. Popadic; F. Sarubbi; G. Lorito; S. Milosavljevic; W.B. de Boer; L.K. Nanver;
    In International Workshop on Junction Technology (IWJT), 2010,
    Shanghai, China, pp. 1�4, 2010.

  3. Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers
    M. Popadic; T.L.M. Scholtes; W. de Boer; F. Sarubbi; L.K. Nanver;
    Journal of Electronic Materials,
    Volume 38, Issue 11, pp. 2323-2328, 2009.

  4. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
    C. Huang; K. Buisman; M. Maretti; L. K. Nanver; F. Sarubbi; M. Popadic; T. Scholtes; H. Schellevis; L. E. Larson; L. de Vreede;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 57, Issue 1, pp. 205-215, 2009.

  5. Analytical Model of I-V Characteristics of Arbitrarily Shallow p-n Junctions
    M. Popadic; G. Lorito; L. K. Nanver;
    IEEE Transactions on Electron Devices,
    Volume 56, Issue 1, pp. 116-125, 2009.

  6. Analytical Carrier Transport Model for Arbitrarily Shallow p-n Junctions
    M. Popadic; G. Lorito; L.K. Nanver;
    IEEE Transactions on Electron Devices,
    Volume 56, Issue 1, pp. 116-125, 2009.

  7. Ultra linear low-loss varactor diode configurations for adaptive RF systems
    C. Huang; K. Buisman; L.K. Nanver; F. Sarubbi; M. Popadic; T.L.M. Scholtes; H. Schellevis;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 57, Issue 1, pp. 205-215, 2009.

  8. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
    L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    IEEE Journal of Solid-State Circuits,
    Volume 44, Issue 9, pp. 2322-2338, 2009.

  9. C-V Profiling of Ultrashallow Junctions using a Step-Like Background Doping Profile
    M. Popadic; C. Xu; F. Sarubbi; L.K. Nanver;
    In Proceedings of 39th European Solid-State Device Research Conference, ESSDERC 2009,
    Athens, Greece, pp. 303-306, 2009.
    document

  10. Silicon doping techniques using chemical vapor dopant deposition
    M. Popadic;
    PhD thesis, Delft University of Technology, Nov. 2009. ISBN 978-90-8570-422-5; Promotor: prof. L.K. Nanver.
    document

  11. Enabling low-distortion varactors for adaptive transmitters
    C. Huang; L. C. N. de Vreede; F. Sarubbi; M. Popadic; K. Buisman; J. Qureshi; M. Mar.etti; A. Akhnoukh; T. L. M. Scholtes; L. E. Larson; L. K. Nanver;
    IEEE Trans. Microwave Theory and Techniques,
    Volume 56, Issue 5, pp. 1149-1163, May 2008.

  12. A 67 dBm OIP3 Multistacked Junction Varactor
    C. Huang; K. Buisman; L. K. Nanver; F. Sarubbi; M. Popadic; T. L. M. Scholtes; H. Schellevis; L. E. Larson; L. C. N. de Vreede;
    IEEE Microwave and Wireless Components Letters,
    Volume 18, Issue 11, pp. 749-751, 2008.

  13. Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode Technology
    L.K. Nanver; F. Sarubbi; V. Gonda; M. Popadic; T.L.M. Scholtes; W. de Boer; K. Buisman;
    In Proceedings of IEEE International Workshop on Junction Technology (IWJT 2008),
    Shanghai, China, pp. 101-106, May 2008.
    document

  14. Analytical carrier transport model for arbitrary shallow p-n junctions
    M. Popadic; G. Lorito; L.K. Nanver;
    In Proceedings of 26th International Conference on Microelectronics (MIEL 2008),
    Niza, Serbia, pp. 155-158, May 2008.

  15. Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology
    L.K. Nanver; V. Gonda; Y. Civale; T.L.M. Scholtes; L. La Spina; H. Schellevis G. Lorito; F. Sarubbi; M. Popadic; K. Buisman; S. Milosavljevic; E.J.G. Goudena;
    In Proceedings of 9th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2008),
    Beijing, China, pp. 1184-1187, Oct. 2008.

  16. RF/Microwave Device Fabrication in Silicon-on-Glass Technology
    L..K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    In Proceedings of 26th International Conference on Microelectronics (MIEL 2008),
    Niza, Serbia, pp. 273-280, May 2008.

  17. Ultrashallow doping by excimer laser drive-in of RPCVD surface deposited Arsenic monolayers
    M. Popadic; Lis K. Nanver; Cleber Biasotto; Viktor Gonda; Johan van der Cingel;
    In Proceedings of 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors (RTP 2008),
    Las Vegas, Nevada, USA, pp. 141-146, Sep. 2008.

  18. Special RF/Microwave Devices in Silicon-on-Glass Technology
    L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    In Proceedings of IEEE Bipolar/BiCMOS Circuit and Technology Meeting (BCTM 2008),
    Monterey, CA, USA, pp. 33-40, Oct. 2008.

  19. Ultrashallow Defect-Free Junction Formation by Excimer Laser Annealing
    M. Popadic; Lis K. Nanver; Johan van der Cingel;
    In Proc. 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE),
    Veldhoven, The Netherlands, pp. 495-498, Nov. 2008.

  20. Ultra-Shallow Dopant Diffusion from Pre-Deposited RPCVD Monolayers of Arsenic and Phosphorus
    Milos Popadic; Lis K. Nanver; Tom L. M. Scholtes;
    In Proceedings of the 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors RTP 2007,
    Catania, Italy, pp. 95-100, 2007. ISBN 1-4244-1227-7.

  21. Silicon Dioxide Contact Window Disfiguration Due to Oxide Decomposition During the Baking Step
    M. Popadic; L. K. Nanver; Y. Civale;
    In Proceedings of 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors,
    Veldhoven, The Netherlands, 2007. ISBN 978-90-73461-49-9.

  22. Simulation of a tunable optically pumped terahertz intersubband laser with diluted magnetic semiconductors
    M. Popadic; V. Milanovic; Z. Ikonic; Dragan Indjin;
    Journal of Applied Physics,
    Volume 100, pp. 1-6, 2006.

  23. Profile Engineering of Decreasing Arsenic Doping in Silicon RPCVD
    Milos Popadic; Francesco Sarubbi; Tom L. M. Scholtes; Silvana Milosavljevic; Wiebe de Boer; Lis K. Nanver;
    In Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors,
    Veldhoven, The Netherlands, pp. 475-478, 2006.

  24. Versatile n-type profile engineering by controlling arsenic surface segregation in silicon RPCVD
    M. Popadic; F. Sarubbi; T. L. M. Scholtes; L. K. Nanver;
    In ECS Transactions,
    2006.
    document

  25. Schottky Barrier Height Modulation by Ultra-Shallow Low-Dose Dopant Diffusion
    M. Popadic; Lis K. Nanver; Tom L. M. Scholtes;
    In 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ICSICT-2006,
    Shanghai, China, pp. 469-471, 2006. ISBN 1-4244-0160-7.

  26. Silicon-on-glass technology for RF and microwave device fabrication
    Lis K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; H. Cong; S. Milosavljevic; E.J.G. Goudena;
    In 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ICSICT-2006,
    Shanghai, China, pp. 162-165, 2006. ISBN 1-4244-0160-7.
    document

BibTeX support

Last updated: 25 Jul 2017

Milos Popadic

Alumnus