dr. A. Sakic

1. Silicon Drift Detectors for the detection of x-rays down to energies as low as 100 eV
   Negin Golshani; Jaber Derakhshandeh; Agata Sakic; Lis Nanver;
   In Micronano conference,
   Ede, The Netherlands, 2013.

2. High-efficiency silicon photodiode detector for sub-keV electron microscopy
   A. Sakic; G. van Veen; K. Kooijman; P. Vogelsang; T.L.M. Scholtes; W.B. de Boer; J. Derakhshandeh; W.H.A. Wien; S. Milosavljevic; L.K. Nanver;
   IEEE Transactions on Electron Devices,
   Volume 59, Issue 10, pp. 2707-2714, Oct. 2012. DOI 10.1109/TED.2012.2207960.

3. Epitaxial growth of large-area p+n diodes at 400 �C by aluminum-induced crystallization
   A. Sakic; L. Qi; T.L.M. Scholtes; J. van der Cingel; L.K. Nanver;
   In Proc. of the 42th European Solid-State Device Research Conference (ESSDERC 2012),
   Bordeaux, France, pp. 145-148, Sept. 2012. ISBN 978-1-4673-1707-8; DOI 10.1109/ESSDERC.2012.6343354.

4. Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions
   T. Knezevic; T. Suligoj; A. Sakic; L.K. Nanver;
   In Proc. of the 35th International Convention MIPRO 2012,
   Opatija, Croatia, pp. 36-41, May 2012. ISBN 978-1-4673-2577-6.

5. Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices
   L.K. Nanver; A. Sammak; V. Mohammadi; K.R.C. Mok; L. Qi; A. Sakic; N. Golshani; J. Derakhshandeh; T.M.L. Scholtes; W.D. de Boer;
   In ECS Trans. 2012: 27th Symposium on Microelectronics Technology and Devices (SBMicro2012),
   Brazil, Brasilia, pp. 25-33, Aug. 2012. DOI 10.1149/04901.0025ecst.

6. Silicon technology for integrating high-performance low-energy electron photodiode detector
   A. Sakic;
   PhD thesis, Delft University of Technology, Nov. 2012. ISBN 978-94-6203-260-6; Promotor: prof.dr. L.K. Nanver.

7. Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes
   A. Sakic; T.L.M. Scholtes; W. de Boer; N. Golshani; J. Derakhshandeh; L.K. Nanver;
   Materials,
   Volume 4, Issue 12, pp. 2092-2107, Dec. 2011. DOI 10.3390/ma4122092.

8. On the uniformity of pure-boron-layer depositions
   V. Mohammadi; W.D. de Boer; T.L.M. Scholtes; A. Sakic; C. Heerkens; L.K. Nanver;
   In Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011),
   Veldhoven, The Netherlands, pp. 73-75, Nov. 2011.

9. Radiation Detector
   Lis K. Nanver; T. Ludovicus; M. Scholtes; Agata Sakic; C. Sander Kooijman; Gerard Nicolaas Anne Van Veen;
   Patent application, 2011.

10. Ultrashallow junction silicon photdiodes for detection of low energy electrons
    A. Sakic; L.K. Nanver; T.L.M. Scholtes; C.T.H. Heerkens; G. van Veen; K. Kooijman; P. Vogelsang;
    In STW-SAFE2010 Conference Proceeding,
    Veldhoven, pp. 150-153, 2010.

11. The influence of stacking faults on the leakage current of B-layer p+n diodes.
    Golshani; N; W.B. de Boer; T.L.M. Scholtes; A. Sakic; L.K. Nanver;
    In Proceedings of STW-SAFE 2010,
    Veldhoven, Nederland, pp. 81-84, 2010.

12. Silicon Photodiodes for High-Efficiency Low-Energy Electron Detection
    Agata Sakic; Lis K. Nanver; T. L. M. Scholtes; Carel Th. H. Heerkens; Gerard van Veen; Kees Kooijman; Patrick Vogelsang;
    In Proceedings of IEEE 40th European Solid-State Device Research Conference (ESSDERC 2010),
    Seville, Spain, pp. 102-105, Sep. 2010.

13. Characterization of amorphous boron layers as diffusion barrier for pure aluminium
    Agata Sakic; Vladimir Jovanovic; Parastoo Maleki; Tom L.M. Scholtes; Silvana Milosavljevic; Lis K. Nanver;
    In MIPRO 2010 International Conference,
    Opatija, Croatia, pp. 52-55, May 2010.

14. Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator
    Agata Sakic; Yann Civale; Lis K. Nanver; Cleber Biasotto; Vladimir Jovanovic;
    In MRS Spring Meeting Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology,
    San Francisco, Apr. 2010.

15. Versatile Silicon Photodiode Detector Technology for Scanning Electron Microscopy with High-Efficiency Sub-5 keV Electron Detection
    A. Sakic; L. K. Nanver; G. van Veen; K. Kooijman; P. Vogelsang; T. L.M. Scholtes; W. de Boer; W. H. A. Wien; S. Milosavljevic; C. Th. H. Heerkens; T. Kne_evi_; I. Spee;
    In International Electron Devices Meeting (IEDM),
    San Francisco, CA, 2010.

16. Pure-Boron Chemical-Vapor-Deposited Layers: a New Material for Silicon Device Processing
    L.K. Nanver; T. L. M. Scholtes; F. Sarubbi; W.B. de Boer; G. Lorito; A. Sakic; S. Milosavljevic; C. Mok; L. Shi; S. Nihtianov; K. Buisman;
    In 18th Annual Conference on Advanced Thermal Processing of Semiconductors-RTP 2010,
    Gainesville, FL, Sep. 2010.

17. New Solid State Detector Design for Ultra-Sensitive Back-Scattered Electron Detection
    Ingo Gestmann; Kees Kooijman; Agata Sakic; Lis Nanver; Gerard van Veen;
    In 17th International Microscopy Congress (IMC17),
    Rio de Janeiro, Brazil, Sep. 2010.

18. Application of amorphous boron layer as diffusion barrier for pure aluminium
    A. Sakic; G. Lorito; F. Sarubbi; T.L.M. Scholtes; J. van der Cingel; L.K. Nanver;
    In Proc. of SAFE 2009,
    Veldhoven, The Netherlands, pp. 112-115, 2009.
    document

19. Influence of Scaling and Source/Drain Series Resistance on the Characteristics of Ultra-Thin Body FinFETs
    A. Sakic; M. Poljak; V. Jovanovic; T. Suligoj;
    In Proceedings of the 31st International Convention MIPRO,
    Zagreb, pp. 84-89, 2008.
    document

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