dr. A. Sammak

1. Integrated SiGe Detectors for Si Photonic Sensor Platforms
   Gregory Pandraud; Silvana Milosavljevic; Amir Sammak; Matteo Cherchi; Aleksandar Jovic; Pasqualina Sarro;
   In Proceedings of Eurosensors,
   pp. 559, 2017.

2. Robust UV/VUV/EUV PureB Photodiode Detector Technology with High CMOS Compatibility
   L.K. Nanver; L. Qi; V. Mohammadi; K.R.M. Mok; W.B. de Boer; N. Golshani; A. Sammak; T.L.M. Scholtes; A. Gottwald; U. Kroth; F. Scholze;
   Journal of Selected Topics in Quantum Electronics,
   Volume 20, Issue 6, pp. pp.1-11, 2014.

3. A 270�1 Ge-on-Si photodetector array for sensitive infrared imaging
   Sammak, A; Aminian, M; Lin Qi; Charbon, E; Nanver, LK;
   In Optical Sensing and Detection III Vol. 9141. Proceedings of SPIE- International Society for Optical Engineering,
   pp. 1-7, 2014.

4. VUV/Low-Energy-Electron Si Photodiodes with Post-Metal 400�C PureB Deposition
   V. Mohammadi; L. Qi; N. Golshani; K. R. C. Mok; W. B. de Boer; A. Sammak; J. J. Derakhshandeh. van der Cingel; L. K. Nanver;
   IEEE Electron Device Letters,
   Volume 34, Issue 12, 2013. DOI 10.1109/LED.2013.2287221.

5. PureGaB p+n Ge diodes grown in large windows to Si with a sub-300 nm transition region
   A. Sammak; W.B. de Boer; L. L. Qi K. Nanver;
   Journal of Solid-State Electronics,
   Volume 74, Issue 1, pp. 126-133, Aug. 2012. DOI 10.1016/j.sse.2012.04.023.

6. A Ge-on-Si single-photon avalanche diode operating in Geiger mode at infrared wavelengths
   M. Aminian; A. Sammak; L. L. Qi K. Nanver; E. Charbon;
   In Proc. SPIE: Advanced Photon Counting Techniques VI,
   Baltimore, Maryland, Apr 2012. DOI 10.1117/12.920561.

7. Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor
   A. Sammak; W.B. de Boer; L.K. Nanver;
   In Electro-Chemical Society (ECS) Meeting Abstracts,
   Honolulu, Hawaii, Oct. 2012.

8. Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices
   L.K. Nanver; A. Sammak; V. Mohammadi; K.R.C. Mok; L. Qi; A. Sakic; N. Golshani; J. Derakhshandeh; T.M.L. Scholtes; W.D. de Boer;
   In ECS Trans. 2012: 27th Symposium on Microelectronics Technology and Devices (SBMicro2012),
   Brazil, Brasilia, pp. 25-33, Aug. 2012. DOI 10.1149/04901.0025ecst.

9. Silicon-based integration of groups III, IV, V chemical vapor deposition in high quality photodiodes
   A. Sammak;
   PhD thesis, Delft University of Technology, Dec. 2012. ISBN 9789462032705; Promotor: prof.dr. L.K. Nanver.

10. Large-area selective CVD epitaxial growth of Ge on Si substrates
    A. Sammak; W.B. de Boer; L. L. Qi K. Nanver;
    In Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011),
    Veldhoven, The Netherlands, pp. 96-99, Nov. 2011.
    document

11. High-quality p+n Ge diodes selectively grown on Si with a sub-300nm transition region
    A. Sammak; W.B. de Boer; L. L. Qi K. Nanver;
    In Proc. European Solid-State Device Research Conference (ESSDERC 2011),
    Helsinki, Finland, pp. 359-362, Sep. 2011. ISBN 978-1-4577-0707-0; DOI 10.1109/ESSDERC.2011.6044160.

12. A CMOS compatible Ge-on-Si APD operating in proportional and geiger modes at infrared wavelengths
    A. Sammak; M. Aminian; L. Qi; W.B. de Boer; E. Charbon; L.K. Nanver;
    In International Electron Device Meeting (IEDM 2011),
    Washington DC, Dec. 2011.

13. Merging standard CVD techniques for GaAs and Si epitaxial growth.
    A. Sammak; W.B. de Boer; Boogaard; A van den; L.K. Nanver;
    ECS Transactions,
    Volume 28, Issue 5, pp. 237-244, 2010.

14. Unifying GaAs and Si epitaxial growth in a standard Si/SiGe CVD system.
    A. Sammak; W.B. de Boer; L.K. Nanver;
    In STW-SAFE 2010 Conference Proceeding,
    Veldhoven, pp. 147-154, 2010.

15. Chemical vapor deposition of Ga dopants for fabricating ultrashallow pn junctions at 400
    A. Sammak; L. Qi; W.B. de Boer; L.K. Nanver;
    In 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010),
    Shanghai, China, pp. 969-971, 2010.
    document

16. Chemical Vapor Deposition of Gallium on Silicon and SiO2. In PJ French
    A. Sammak; W.B. de Boer; L.K. Nanver; L. Qi; G. Lorito;
    In Proc. of SAFE 2009,
    Veldhoven, The Netherlands, pp. 538-541, 2009.
    document

17. Hyrogenation Assisted Lateral Micromachining of (111) Silicon Wafers
    S. Darbari; S. Azimi; S. Mohajerzadeh; A. Sammak; N. Izadi; S. Famini;
    IEEE Journal of Microelectromechanical systems,
    Volume 17,, Issue 6, pp. 1489-1494, Dec. 2008.

18. On the Aluminum-Mediated Solid-Phase Epitaxy of Silicon at 300C
    A. Sammak; Y. Civale; L. K. Nanver;
    In Proc. 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE),
    Veldhoven, The Netherlands, Nov. 2008.

19. Deep vertical etching of silicon wafers using a hydrogenation assisted reactive ion etching
    A. Sammak; S. Azimi; N. Izadi; B. Khadem Hosseinieh; S. Mohajerzadeh;
    IEEE Journal of Microelectromechanical Systems,
    Volume 16, Issue 4, pp. 912-918, Aug. 2007.

20. Smart etch or plasma hydrogenation-assisted high aspect ratio etching of silicon
    S. Azimi; A. Sammak; B. Khadem Hosseinieh; S. Mohajerzadeh; R. Faez; N. Izadi;
    In ICEE 2007,
    ITRC, Iran, 2007.

21. Silicon Nanowire Fabrication Using Novel Hydrogenation-Assisted Deep Reactive Ion Etching
    A. Sammak; S. Azimi; B. Khadem Hosseinieh; S. Mohajerzadeh; E. Asl Soleimani;
    In ISDRS 2007,
    College Park MD, USA, Dec. 2007.

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