dr.ir. R. van der Toorn

1. RF-noise modeling in advanced CMOS technologies
   Smit, GDJ; Scholten, AJ; Pijper, RMT; Tiemeijer, LF; van der Toorn, R; Klaassen, D.B.M;
   IEEE Transactions on Electron Devices,
   Volume 61, Issue 2, pp. 245-254, 2014.

2. Geometric-mechanical origin of global planetary angular momentum dynamics
   R. van der Toorn;
   Journal of Sea Research,
   Volume 74, pp. 45-51., Nov. 2012. DOI 10.1016/j.seares.2012.08.006.

3. Impact of the emitter stored charge on RF noise of junction bipolar transistors
   F. Vitale; R. van der Toorn;
   In Proc. 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2012),
   Portland, Oregon, USA, pp. 1-4, Sept. 2012. ISBN 978-1-4673-3020-6; DOI 10.1109/BCTM.2012.6352625.

4. Compact noise modeling of SiGe heterojunction bipolar transistors: Relevance of base-collector shot noise correlation and non-quasi static effects in the quasi-neutral emitter
   F. Vitale; R. Pijper; R. van der Toorn;
   In Proc. 2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM 2011),
   Atlanta, GA, pp. 179-182, Oct. 2011.

5. Angular momentum dynamics and the intrinsic drift of monopolar vortices on a rotating sphere
   Ramses van der Toorn; Joseph T. F. Zimmerman;
   Journal of Mathematical Physics,
   Volume 51, 2010. DOI 10.1063/1.3455315.

6. A Verilog-A Implementation for Correlated Noise in HBTs
   F. Vitale; Ramses van der Toorn;
   In Proceedings of SAFE 2010,
   Veldhoven, Netherlands, pp. 180-183, Nov. 2010.

7. Base Resistance Distribution in Bipolar Transistors: Relevance to Compact Noise Modeling and Extraction from Admittance Parameters
   F. Vitale; R. Pijper; Ramses van der Toorn;
   In Proceedings of IEEE BCTM 2010,
   Austin, TX, pp. 161-164, Oct. 2010.

8. Compact Model of Zener tunneling Current in Bipolar Transistors featuring a Smooth Transition to Zero Forward Bias Current
   V. Milovanovic; R. van der Toorn; P. Huphries; D. Vidal; A. Vafanejad;
   In Proc. of Bipolar/BiCMOS Circuits and Technology Meeting,
   Capri, Italy, IEEE, pp. 99-102, 2009.
   document

9. Matlab toolkit for semiconductor device characterization and model.
   Vidal; D; Vitale; F; R. van der Toorn;
   In P.J. French (Ed.), Proc. 12th Annual Workshop on Semiconductor Advances for Future,
   Veldhoven, The Netherlands, STW, pp. 174-177, 2009. ISBN 978-90-73461-62-8.

10. Statistical Analysis of Diode Ideal Current Parameter Extraction Procedures
    V. Milovanovic; R. van der Toorn;
    In Proc. 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE 2009),
    Veldhoven, The Netherlands, pp. 163-166, 2009.

11. RF Small Signal Avalanche Characterization and Repercussions on Bipolar Transistor Circuit Design
    Vladimir Milovanovic; Ramses van der Toorn;
    In Proc. IEEE EUROCON 2009,
    St. Petersburg, Russia, IEEE, pp. 230-233, 2009.
    document

12. On the Spherical Approximation of the Geopotential in Geophysical Fluid Dynamics and the use of a Spherical Coordinate System
    Ramses van der Toorn; and Joseph T.F. Zimmerman;
    Geophysical and Astrophysical Fluid Dynamics,
    Volume 102, Issue 4, pp. 349-371, 2008.

13. Evaluation of Al-doped SPE ultrashallow P+N Junctions for use as PNP SiGe HBT Emitters
    Yann Civale; Gianpaolo Lorito; Cuiqin Xu; Lis K. Nanver; Ramses van der Toorn;
    In Proceedings of IEEE International Workshop on Junction Technology (IWJT 2008),
    Shanghai, China, pp. 97-100, May 2008.
    document

14. Modeling Advanced Avalanche Effects for Bipolar Transistor Circuit Design
    Vladimir Milovanovic; Ramses van der Toorn;
    In Proc. 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE),
    Veldhoven, The Netherlands, Nov. 2008.

15. Threshold Current for the Onset of Kirk Effect in Bipolar Transistors With a Fully Depleted Nonuniformly Doped Collector
    R. van der Toorn;
    IEEE Electron Device Letters,
    Volume 28, Issue 1, pp. 54-57, Jan. 2007.

16. Distribution of the Collector Resistance of Planar Bipolar Transistors: Impact on Small Signal Characteristics and Compact Modeling
    R. van der Toorn; J.J. Dohmen; O. Hubert;
    In Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 07),
    IEEE, pp. 184-187, Sept. 2007.

17. Compact Modeling of GaAs Heterojunction Bipolar Transistors using the new Mextram 3500 model
    R. van der Toorn; J.C.J. Paasschens; J.J. Dohmen; R.M.T. Pijper; B.N. Balm;
    In Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 1-4, Oct. 2006.
    document

18. Analysis of the Kirk effect in silicon-based bipolar transistors with a nonuniform collector profile
    R.J.E. Hueting; R. van der Toorn;
    IEEE Trans. Electron Devices,
    Volume 52, Issue 11, pp. 2489-2495, 2005.

19. Physically based analytical modeling of base-collector charge, capacitance and transit time of III-V HBTs
    R. van der Toorn; J.C.J. Paasschens; R.J. Havens;
    In Compound Semiconductor Integrated Circuit Symposium,
    IEEE, pp. 283-286, Oct. 2004.
    document

20. A physically based analytical model of the collector charge of III-V heterojunction bipolar transistors
    R. van der Toorn; J.C.J. Paasschens; R.J. Havens and;
    In Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual 2003. IEEE 2003,
    pp. 111-114, 2003.

21. Geometry, Angular Momentum and the Intrinsic Drift of Oceanic Monopolar Vortices
    Ramses van der Toorn;
    PhD thesis, Nederlands Instituut voor Onderzoek der Zee, Texel / Faculteit Natuur- en Sterrenkunde, Universiteit Utrecht, 1997.

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