dr. R. Ishihara

Associate Professor
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

Expertise: Thin Film Transistors

Biography

Ryoichi Ishihara was born in 1967 in Japan. He received the B.E., M. E., and Ph. D. degrees from Department of Physical Electronics, Tokyo Institute of Technology, Japan in 1991, 1993, and 1996, respectively. His main research activities were low-temperature chemical vapor deposition of silicon nitride film, fabrication of amorphous-Si and poly-Si thin-film transistors (TFTs), and excimer-laser crystallization of Si films. Since 1996, he has been with Delft Institute of Microsystems and Nanoelectronics, Delft University of Technology, Delft, The Netherlands, where he is currently an Associate Professor.

His research has been focusing on location control of grains through a novel excimer-laser crystallization process and fabrication and characterization of high-performance TFTs inside a single grain. He is in charge of a number of projects related to laser crystallization of Si film and thin film transistor technologies. He is a member of the Society for Information Display, the Material Research Society, and the Japan Society of Applied Physics. In 2014 he was chair of the 10th International TFT Conference (ITC 2014).

In 2014 Dr. Ishihara moved to the Quantum Integration Technology department, his current website can be found here.

Projects history

Carbon nanotubes as vertical interconnect in 3D integrated circuits

  1. Carbon Nanotube Array: Scaffolding Material for Opto, Electro, Thermo, and Mechanical Systems
    Amir M. Gheytaghi; H. van Zeijl; S. Vollebregt; R.H. Poelma; C. Silvestri; R. Ishihara; G. Q. Zhang; P. M. Sarro;
    Innovative Materials,
    Volume 3, pp. 22-25, 2018.

  2. Vacuum Assisted Liquified Metal (VALM) TSV Filling Method With Superconductive Material
    J.A. Alfaro; P.M. Sberna; C. Silvestri; M. Mastrangeli; R. Ishihara; P.M. Sarro;
    In 31th IEEE International Conference on Micro Electro Mechanical Systems (MEMS),
    2018.

  3. Carbon Nanotubes as Vertical Interconnects for 3D Integrated Circuits
    Sten Vollebregt; Ryoichi Ishihara;
    In Carbon Nanotubes for Interconnects,
    Springer International Publishing, 2017.
    document

  4. The growth of carbon nanotubes on electrically conductive ZrN support layers for through-silicon vias
    Sten Vollebregt; Sourish Banerjee; Frans D. Tichelaar; Ryoichi Ishihara;
    Microelectronic Engineering,
    Volume 156, pp. 126-130, 2016.
    document

  5. Effect of excimer laser annealing on a -InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers
    Juan Paolo Bermundo; Yasuaki Ishikawa; Mami N Fujii; Toshiaki Nonaka; Ryoichi Ishihara; Hiroshi Ikenoue; Yukiharu Uraoka;
    Journal of Physics D: Applied Physics,
    Volume 49, Issue 3, pp. 035102-1-7, 2016.

  6. The Direct Growth of Carbon Nanotubes as Vertical Interconnects in 3D Integrated Circuits
    Sten Vollebregt; Ryoichi Ishihara;
    Carbon,
    Volume 96, pp. 332-338, 2016.
    document

  7. Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
    S. Vollebregt; R. Ishihara;
    Journal of Visual Experiments,
    Volume 106, pp. e53260, 2015.
    document

  8. Solution-processed polycrystalline silicon on paper
    M. Trifunovic; T. Shimoda; R. Ishihara;
    Applied Physics Letters,
    Volume 106, pp. 163502, 2015.

  9. Manufacturing uniform field silicon drift detector using double boron layer
    Negin Golshani; C.I.M Beenakker; Ryoichi Ishihara;
    Nuclear Instruments and Methods in Physics Research Section A,
    Volume 794, pp. 206-214, 2015.

  10. Impact of the atomic layer deposition precursors diffusion on solid-state carbon nanotube based supercapacitors performances
    G Fiorentino; S Vollebregt; FD Tichelaar; R Ishihara; PM Sarro;
    IOP Nanotechnology,
    Volume 26, Issue 6, pp. 064002, 2015.
    document

  11. High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
    Negin Golshani; Jaber Derakhshandeh; C.I.M. Beenakker; R. Ishihara;
    Solid-State Electronics,
    Volume 105, pp. 6-11, 2015.

  12. Solution-Processed Poly-Si TFTs at Paper Compatible Temperatures
    Miki Trifunovic; Jin Zhang; Michiel van der Zwan; Tatsuya Shimoda; Ryoichi Ishihara;
    In SID Symposium Digest of Technical Papers,
    pp. 415-418, 2015.

  13. Solution-Processed LTPS on Paper
    Ryoichi Ishihara; Miki Trifunovic; Paolo Sberna; Tatsuya Shimoda;
    In Proceeding of IDW 15, The 22nd International Display Workshop,
    2015.

  14. Design dependent SRAM PUF robustness analysis
    M. Cortez; S. Hamdioui; R. Ishihara;
    In 16th IEEE Latin-American Test Symposium,
    2015.

  15. Carbon nanotubes TSV grown on an electrically conductive ZrN support layer
    Sten Vollebregt; Sourish Banerjee; Frans D. Tichelaar; Ryoichi Ishihara;
    In IEEE International Interconnect Technology Conference,
    pp. 281-283, 2015.

  16. Doped Carbon Nanotubes for Interconnects
    J. Robertson; S. Esconjauregui; L. D’Arsie; J. Yang; H. Sugime; G. Zhong; Y. Guo; S. Vollebregt; R. Ishihara; C. Cepek; G. Duesberg; T. Hallam;
    In Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM),
    2015.

  17. Dominant thermal boundary resistance in multi-walled carbon nanotube bundles fabricated at low temperature
    Vollebregt, Sten; Banerjee, Sourish; Chiaramonti, Ann N; Tichelaar, Frans D; Beenakker, Kees; Ishihara, Ryoichi;
    Journal of Applied Physics,
    Volume 116, Issue 2, pp. 023514, 2014.

  18. Carbon nanotube vertical interconnects fabricated at temperatures as low as 350 C
    Vollebregt, Sten; Tichelaar, FD; Schellevis, H; Beenakker, CIM; Ishihara, R;
    Carbon,
    Volume 71, pp. 249--256, 2014.

  19. Failure Analysis and Reliability of Low-Temperature-Grown Multi-Wall Carbon Nanotube Bundles Integrated as Vias in Monolithic Three-Dimensional Integrated Circuits
    Chiaramonti, Ann N; Vollebregt, Sten; Sanders, Aric W; Ishihara, Ryoichi; Read, David T;
    Microsc. Microanal,
    Volume 20, pp. 1762-1763, 2014.

  20. Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics:
    Ryoichi ISHIHARA; Jin ZHANG; Miki TRIFUNOVIC; Jaber DERAKHSHANDEH; Negin GOLSHANI; Daniel M.R. TAJARI MOFRAD; Tao CHEN; Kees BEENAKKER; Tatsuya SHIMODA;
    IEICE Transactions on Electronics,
    Volume E97.C, Issue 4, pp. 227--237, 2014.

  21. Single-Grain Si TFTs Fabricated From Sputtered Si on a Polyimide Substrate
    Jin Zhang; Michiel van der Zwan; Ryoichi Ishihara;
    Journal of Display Technology,
    Volume 10, Issue 11, pp. 945-949, 2014.

  22. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications
    Golshani, Negin; Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.;
    APL Materials,
    Volume 2, Issue 10, pp. 100702, 2014.
    document

  23. A Flexible Ultrathin-Body Single-Photon Avalanche Diode With Dual-Side Illumination
    Pengfei Sun; Charbon, E.; Ishihara, R.;
    IEEE Journal of Selected Topics in Quantum Electronics,
    Volume 20, Issue 6, pp. 1-8, Nov 2014.
    document

  24. Carbon Nanotube Vertical Interconnects: Prospects and Challenges
    Vollebregt, S; Beenakker, CIM; Ishihara, R;
    In Micro-and Nanoelectronics: Emerging Device Challenges and Solutions,
    CRC Press, 2014.

  25. Excimer Laser Annealing of Amorphous Oxide Thin-Film Transistors Passivated with Hybrid Passivation Layer
    J. P. S. Bermundo; Y. Ishikawa; M. N. Fujii; M. V. D. Zwan; T. Nonaka; R. Ishihara; Y. Uraoka;
    In The 21st International Display Workshops,
    2014.

  26. Solution-processed Poly-Si TFTs Fabricated at a Maximum Temperature of 150 C
    M. Trifunovic; Jin Zhang; M. van der Zwan; R. Ishihara;
    In Technical Digest International Electron Devices Meeting,
    pp. 26.5.1-4, 2014.

  27. Single-Grain Si TFTs fabricated on a Precursor from Doctor-Blade Coated Liquid-Si
    Jin Zhang; M. Trifunovic; M. van der Zwan; H. Takagishi; T. Shimoda; R. Ishihara;
    In ECS and SMEQ Joint International Meeting,
    2014.

  28. Solution processed single-grain Si TFTs on a plastic substrate
    Ishihara, R; Jin Zhang,; Zwan, M van der; Trifunovic, M; Takagishi, H; Shimoda, T;
    In SID International symposium digest of technical papers Vol. 45. SID International Symposium. Digest of Technical Papers,
    pp. 439-442, 2014.

  29. 3D solid-state supercapacitors obtained by ALD coating of high-density carbon nanotubes bundles
    Fiorentino, Giuseppe; Vollebregt, Sten; Tichelaar, FD; Ishihara, Ryoichi; Sarro, Pasqualina M;
    In Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on,
    IEEE, pp. 342--345, 2014.

  30. Manufacture a submicron structure using a liquid precursor
    R. Ishihara; M. van der Zwam; M. Trifunovic;
    Patent no. 2010199, 08 2014.

  31. Method of forming silicon on a substrate
    Ishihara, R.; Trifunovic, M.; Van der Zwan, M.;
    European Patent Office WO 2014175740 (A1), 2014.
    document

  32. Size-Dependent Effects on the Temperature Coefficient of Resistance of Carbon Nanotube Vias
    Vollebregt, Sten; Banerjee, Sourish; Beenakker, Kees; Ishihara, Ryoichi;
    Electron Devices, IEEE Transactions on,
    Volume 60, Issue 12, pp. 4085--4089, 2013.

  33. Thermal conductivity of low temperature grown vertical carbon nanotube bundles measured using the three-ω method.
    S. Vollebregt; S. Banerjee; C.I.M. Beenakker; R. Ishihara;
    Applied Physics Letters,
    Volume 102, Issue 19, pp. 1-4, 2013.

  34. Towards the integration of carbon nanotubes as vias in monolithic three-dimensional integrated circuits
    S. Vollebregt; Chiaramonti; AN; J. van der Cingel; C.I.M. Beenakker; R. Ishihara;
    Japanese Journal of Applied Physics. Part 1, Regular Papers Brief Communications & Review Papers,
    Volume 52, Issue 1-5, 2013.

  35. Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si.
    Jin Zhang; M. Trifunovic; M. van der Zwan; H. Takagishi; R. Kawajiri; T. Shimoda; C.I.M. Beenakker; R. Ishihara;
    Applied Physics Letters,
    Volume 102, Issue 24, pp. 1-4, 2013.

  36. Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing
    Fujii; M; Ishikawa; Y; R. Ishihara; J. van der Cingel; Mofrad; MRT; Horita; M; Uraoka; Y;
    Applied Physics Letters,
    Volume 102, Issue 12, pp. 1-4, 2013.

  37. Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology
    Sten Vollebregt; Ryoichi Ishihara; Jaber J. Derakhshandehohan van der Cingel; Hugo Schellevis; C.I.M. Beenakker;
    In Nanoelectronic Device Applications Handbook,
    Taylor and Francis, 2013.

  38. Carbon Nanotubes as Interconnects in Integrated Circuits
    Vollebregt, S; Ishihara, R; Beenakker, CIM;
    In Dekker Encyclopedia of Nanoscience and Nanotechnology, Second Edition,
    Taylor and Francis, 2013.

  39. Flexible single-grain Si TFTs
    R. Ishihara;
    In The 13th International Meeting on Information Display (IMID2013),
    Deagu, Korea, 2013.
    document

  40. Carbon nanotube vias fabricated at back-end of line compatible temperature using a novel CoAl catalyst
    S. Vollebregt; H. Schellevis; C.I.M. Beenakker; R. Ishihara;
    In S. Ogawa (Ed.), IEEE International Interconnect Technology Conference-technical papers,
    Kyoto, Japan, Jun. 2013.

  41. Flexible single-grain Si TFTs
    Ryoichi Ishihara;
    In 4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT),
    Grenoble (France), 2013.

  42. A Flexible Ultra-Thin-Body SOI Single-Photon Avalanche Diode
    Pengfei Sun; Benjamin Mimoun; Edoardo Charbon; Ryoichi Ishihara;
    In IEEE International Electron Device Meeting (IEDM),
    Washington, DC, USA, 2013.

  43. Improvement on MIS Properties of Single-Grain Germanium by Pulsed-Laser Annealing
    Pengfei Sun; M. van der Zwan; A. Arslan; E. Charbon; R. Ishihara;
    In 44th IEEE Semiconductor Interface Specialists Conference,
    Arlington, USA, 2013.

  44. Monolithic 3D-ICs with single grain Si thin film transistors
    R. Ishihara; J. Derakhshandeh; M.R. Tajari Mofrad; T. Chen; N. Golshani; C.I.M. Beenakker;
    Solid-State Electronics,
    Volume 71, pp. 80-87, May 2012. DOI 10.1016/j.sse.2011.10.025.

  45. Location controlled high performance single-grain Ge TFTs on glass substrate
    T. Chen; R. Ishihara; C.I.M. Beenakker;
    Solid-State Electronics,
    Volume 69, pp. 94-98, Mar. 2012. DOI 10.1016/j.sse.2011.11.027.

  46. Analysis of u-Czochralski technique using two-dimensional crystallization simulator
    K. Matsuki; R. Saito; S. Tsukamoto; M. Kimura; R. Ishihara;
    Journal of Crystallization Process and Technology,
    Volume 2, Issue 1, pp. 12-15., Jan. 2012. DOI 10.4236/jcpt.2012.21002.

  47. Thick single grain silicon formation with microsecond green laser crystallization
    A. Arslan; H.J. Kahlert; P. Oesterlin; D.T. Mofrad; R. Ishihara; C.I.M. Beenakker;
    ECS Transactions,
    Volume 50, Issue 8, pp. 35-42, Oct. 2012. ISBN 978-1-62332-007-2.

  48. Influence of the growth temperature on the first and second-order Raman band ratios and widths of carbon nanotubes and fibers
    S. Vollebregt; R. Ishihara; F.D. Tichelaar; Y. Hou; C.I.M. Beenakker;
    Carbon,
    Volume 50, Issue 10, pp. 3542-3554, Aug. 2012. DOI 10.1016/j.carbon.2012.03.026.

  49. Integrating carbon nanotubes as vias in a monolithic 3DIC process
    S. Vollebregt; R. Ishihara; A.N. Chiaramonti; J. van der Cingel; C.I.M. Beenakker;
    In Proc. International Conference on Solid State Devices and Materials (SSDM 2012),
    Kyoto, Japan, pp. 1170-1171, Sep 2012.

  50. Reliability of single-grain silicon TFTs fabricated from spin-coated liquid-silicon
    Z. Jin; R. Ishihara; H. Takagishi; R. Kawajiri; T. Shimoda; C.I.M. Beenakker;
    In Proc. 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),
    Kyoto, Japan, pp. 309-312, Jul. 2012. ISBN: 978-1-4673-0399-6.

  51. OTFT with PNDT3BT-20 dispersed solution by drop casting method
    M. Trifunovic; T. Yokota; Y. Kato; T. Tokuhara; I. Hirata; I. Osaka; K. Takimiya; T. Sekitani; T. Someya; R. Ishihara;
    In Proc. 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),
    Kyoto, Japan, pp. 203-206, Jul 2012. ISBN: 978-1-4673-0399-6.

  52. Electrical characterization of carbon nanotube vertical interconnects with different lengths and widths
    S. Vollebregt; R. Ishihara; F.D. Tichelaar; J. van der Cingel; C.I.M. Beenakker;
    In IEEE International Interconnect Technology Conference (IITC 2012),
    San Jose, CA, USA, pp. 1-3, Jun. 2012. DOI 10.1109/IITC.2012.6251578.

  53. Single-grain Si TFTs fabricated by liquid-Si and long-pulse excimer-laser
    R. Ishihara; Jin Zhang; M. Trifunovic; M. van der Zwan; H. Takagishi; R. Kawajiri; T. Shimoda; C.I.M. Beenakker;
    In Y. Kuo (Ed.), ECS Transactions,
    Honolulu, USA, pp. 49-53, Oct. 2012. ISBN 978-1-62332-007-2.

  54. Single-Grain Germanium TFTs
    R. Ishihara; T. Chen; A. Baiano; M.R. Tajari Mofrad; C.I.M. Beenakker;
    In Y. Kuo; G. Bersuker (Ed.), ECS Transactions: Challenges Si- and Ge-based TFT Technology,
    Hong Kong, China, pp. 65-74, Jun. 2012. DOI 10.1149/1.3600725.

  55. High-sensitivity single-grain Si PIN photodiode with thick-silicon and deep doped regions
    A. Arslan; R. Ishihara; C.I.M. Beenakker;
    In 8th International Thin-Film Transistor Conference,
    Lisbon, Portugal, Jan. 2012.

  56. Low-temperature bottom-up integration of carbon nanotubes for vertical interconnects in monolithic 3D integrated circuits
    S. Vollebregt; R. Ishihara; J. van der Cingel; C.I.M. Beenakker;
    In 3rd IEEE International 3D Systems Integration Conference (3DIC 2011),
    Osaka, Japan, Jan. 2012. DOI 10.1109/3DIC.2012.6262989.

  57. Multilayer conformal coating of highly dense Multi-Walled Carbon Nanotubes bundles
    G. Fiorentino; S. Vollebregt; R. Ishihara; P.M. Sarro;
    In 2012 12th IEEE Conference on Nanotechnology (IEEE-NANO),
    Birmingham, UK, Aug. 2012. ISBN 978-1-4673-2198-3; DOI 10.1109/NANO.2012.6322054.

  58. Contact resistance of low-temperature carbon nanotube vertical interconnects
    S. Vollebregt; A.N. Chiaramonti; R. Ishihara; H. Schellevis; C.I.M. Beenakker;
    In K. Jiang (Ed.), 2012 12th IEEE Conference on Nanotechnology (IEEE-NANO),
    Birmingham, UK, Aug. 2012. ISBN 978-1-4673-2198-3; DOI 10.1109/NANO.2012.6321985.

  59. Monolithic 3D- ICs with Single Grain Si Thin Film Transistors
    R. Ishihara; M. R. T. Mofrad; J. Derakhshandeh; N. Golshani; C. I. M. Beenakker;
    In IEEE 11th International Conference on Solid-State and Integrated Circuit Technology,
    2012.

  60. Excimer laser crystallization of InGaZnO4 on SiO2 substrate
    T. Chen; M.Y. Wu; R. Ishihara; K. Nomura; T. Kamiya; H. Hosono; C.I.M Beenakker;
    Journal of Materials Science: Materials Electronics,
    Volume 22, pp. 1694-1696, 2011. DOI 10.1007/s10854-011-0347-4.

  61. Hot carrier effect and tunneling effect of location- and orientation-controlled (100)- and (110)-oriented single-grain Si TFTs without seed substrate
    T. Chen; R. Ishihara; C.I.M. Beenakker;
    IEEE Transactions on Electron Devices,
    Volume 58, Issue 1, pp. 216-223, 2011. DOI 10.1109/TED.2010.2084089.

  62. Monolithic 3-D integration of SRAM and image sensor using two layers of single-grain silicon
    J.Derakhshandeh; N.Golshani; R. Ishihara; M.R. Tajari Mofrad; M. Robertson; T. Morrison; C.I.M. Beenakker;
    IEEE Transactions on Electron Devices,
    pp. 3954-3961, 2011.

  63. Monolithic 3D Integration of SRAM and Image Sensor Using Two Layers of Single Grain Silicon
    Jaber Derakhshandeh; Negin Golshani; Ryoichi Ishihara; Mohammad Reza Tajari Mofrad; Michael Robertson; Thomas Morrison; C.I.M Beenakker;
    IEEE Transactions on Electron Devices,
    Volume 58, Issue 11, pp. 3954-3961, 2011.

  64. Design and fabrication of single grain (SG) TFTs and lateral PIN photodiodes for low dose X-ray detection
    A. Arslan; R. Ishihara; J. Derakhshandeh; C.I.M. Beenakker;
    In Proc. of SPIE Medical Imaging Conference,
    Lake Buena Vista, Orlando, USA, pp. 79614N-1-79614N, Feb. 2011. DOI 10.1117/12.877959.
    document

  65. Electrical characterisation of low temperature aligned carbon nanotubes for vertical interconnects
    S. Vollebregt; R. Ishihara; J. van der Cingel; H. Schellevis; C.I.M. Beenakker;
    In Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011),
    Veldhoven, The Netherlands, Nov. 2011.

  66. Single grain TFTs and lateral photodiodes for large area X-ray detection
    A. Arslan; R. Ishihara; C.I.M. Beenakker;
    In Proc. 2011 International Image Sensor Workshop (IISW),
    Hokkaido, Japan, pp. 301-304., Jun. 2011.

  67. Monolithic 3D-ICs with single grain Si thin film transistors
    R. Ishihara; N. Golshani; J. Derakhshandeh; M.R. Tajari Mofrad; C.I.M. Beenakker;
    In Proc. 12th International Conference on Ultimate Integration on Silicon (ULIS),
    Cork, Ireland, pp. 1-4, Mar. 2011. ISBN 978-1-4577-0090-3; DOI 10.1109/ULIS.2011.5758004.

  68. Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology
    S. Vollebregt; R. Ishihara; J. J. Derakhshandeh. van der Cingel; H. Schellevis; C.I.M. Beenakker;
    In Proc. 11th IEEE International Conference on Nanotechnology (NANO 2011),
    Portland, OR, pp. 985-990, Aug. 2011.

  69. Single-grain Si TFTs for high-speed flexible electronics
    R. Ishihara; T. Chen; M. van der Zwan; M. He; H. Schellevis; C.I.M. Beenakker;
    In K. Blankenbach; L.C. Chien (Ed.), Proc. of SPIE: Advances Display Technologies and E-papers and Flexible Displays,
    San Francisco, CA, SPIE, Jan. 2011. ISBN 9780819484932; DOI 10.1117/12.876649.

  70. Patterned aligned carbon nanotubes for vertical interconnects in 3D integrated TFT circuits
    S. Vollebregt; R. Ishihara; J. J. Derakhshandeh. van der Cingel; W.H.A. Wien; C.I.M. Beenakker;
    In 7th International Thin-Film Transistor Conference,
    Cambridge, United Kingdom, Mar. 2011.

  71. Single-grain Si TFTs using spin-coated liquid-silicon
    Jin Zhang; R. Ishihara; H. Tagagishi; R. Kawajiri; T. Shimoda. C.I.M. Beenakker;
    In 2011 International Electron Device Meeting (IEDM 2011),
    Washington, DC, USA, pp. 14.5.1-14.5.4, Dec. 2011. ISBN 978-1-4577-0505-2; DOI 10.1109/IEDM.2011.6131553.

  72. Growth of high density aligned carbon nanotubes using palladium as catalyst
    S. Vollebregt; J. Derakhshandeh; R. Ishihara; M. Y. Wu; C. I. M. Beenakker;
    Journal of Electronic Materials,
    Volume 39, Issue 4, pp. 371-375, 2010.

  73. High speed 6T SRAM cells using single grain TFTs fabricated by ""angstrom""""micro""-Czochralski-Czochralski process at low temperature
    Negin Golshani; Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    Japanese Journal of Applied Physics (JJAP),
    2010.

  74. High Performance Single Grain Si- TFT X-ray Image Sensors
    A. Arslan; R. Ishihara; C.I.M. Beenakker;
    In Semiconductor Advances for Future Electronics Workshop (SAFE),
    Veldhoven, The Netherlands, Nov. 2010.

  75. Single-grain Si TFTs with high performance surpassing SOI-TFTs
    R. Ishihara; T. Chen; C.I.M. Beenakker;
    In Proceedings of International Meeting on Information Display,
    2010.

  76. Patterned growth of carbon nanotubes for vertical interconnect in 3D integrated circuits
    S. Vollebregt; R. Ishihara; J. Derakhshandeh; W. Wien; J. van der Cingel; C.E.M. Beenakker;
    In Proc. of SAFE 2010,
    pp. 184-187, 2010.

  77. Monolithic 3D Integration of SRAM and Image Sensor Using Two Layers of Single Grain Silicon
    Negin Golshani; Jaber Derakhshandeh; Ryoichi Ishihara; C.I.M Beenakker; Michael Robertson; Thomas Morrison;
    In IEEE International Conference on 3D System Integration,
    Munich, Germany, 2010.

  78. Low Subthreshold Slope and High Mobility Single Grain Silicon TFTs Using Grown Oxide
    Negin Golshani; Jaber Derakhshandeh; Shu Yi Liu; Ryoichi Ishihara; J. Van der Cingel; C.I.M Beenakker;
    In EMRS,
    2010.

  79. Direct observation of the electrical activity of coincidence-site lattice boundaries in location-controlled silicon islands using scanning spread resistance microscopy
    N. Matsuki; R. Ishihara; C.I.M. Beenakker;
    Journal of the society for information display,
    Volume 17, Issue 3, pp. 293-297, 2009.

  80. Stacking of Single-Grain Thin-Film Transistors.
    M.R. Tajari Mofrad; J. Derakhshandeh; R. Ishihara; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
    Japanese journal of applied physics,
    Volume 48, 2009. ISSN 0021-4922.

  81. Monolithic Stacking of Single-Grain Thin-Film Transistors to realize high performance three dimensional integrated circuits
    M.R Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
    Japanese Journal of Applied Physics,
    Volume 48, 2009.

  82. Strained Single Grain Silicon n- and p-channel Thin Film Transistors by Excimer Laser
    A. Baiano; R. Ishihara; J. van der Cindel; K. Beenakker;
    Accepted IEEE Electron Device Letters,
    2009.

  83. Investigating Low Temperature High Density Aligned Carbon Nanotube and Nanofilament Growth using Palladium as Catalyst
    S. Vollebregt; J. Derakhshandeh; M.Y. Wu; R. Ishihara; C.I.M. Beenakker;
    In SAFE 2009,
    STW, pp. 125-128, 2009.

  84. High speed 6T SRAM cells using single grain TFTs fabricated by ""angstrom""""micro""-Czochralski process at low temperature
    Negin Golshani; Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    In Proceedings of SAFE 2009,
    Veldhoven, Netherlands, 2009.

  85. Comparing Single Grain and Poly silicon Lateral PIN Photodiodes
    Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    In Proceedings of SAFE 2009,
    Veldhoven, Netherlands, 2009.

  86. Growth of high density aligned carbon nanotubes using palladium as catalyst
    S. Vollebregt; J. Derakhshandeh; R. Ishihara; C.I.M. Beenakker;
    In Proceedings of Electronic Material conference 2009,
    USA, 2009.

  87. A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon
    M.R. Tajari Mofrad; A. La Magna; R. Ishihara; J. Derakhshandeh; J. van der Cingel; C.I.M. Beenakker;
    In Proceedings of E-MRS Symposium Q Laser and plasma processing for advanced materials E-MRS,
    pp. 1-4, 2009.
    document

  88. Monolithic 3D-ICs with Single Grain Si TFTs
    R. Ishihara; J. Derakhshandeh; M.R. Tajari Mofrad; T. Chen; C.I.M. Beenakker;
    In Proceedings of Active-Matrix and Flat Panel Displays 2009,
    Tokyo, Japan, 2009.
    document

  89. Fabrication of 6T SRAM cell using single grain TFTs obtained by ""angstrom""""micro""-Czochralski process
    Negin Golshani; R. Ishihara; J. Derakhshandeh; C.I.M Beenakker;
    In Proceedings of Active-Matrix and Flat Panel Displays 2009,
    Nara, Japan, 2009.
    document

  90. Simulation and Experimental study of crystallographic orientation control of 2D location controlled single grain crystalline silicon
    M.R. Tajari Mofrad; R. Ishihara; J. Derakhshandeh; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
    In Proc. of SAFE 2009,
    pp. 185-188, 2009.
    document

  91. Analog and digital output lateral photodiodes fabricated by ""angstrom""""micro""-Czochralski process at low temperature
    J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; C.I.M. Beenakker;
    In Proc. of DRC 2009,
    IEEE, pp. 93-94, 2009.
    document

  92. Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscopy
    N. Matsuki; R. Ishihara; A. Baiano; Y. Hiroshima; S. Inoue; C.I.M. Beenakker;
    In Materials Research Society Symposium Proceedings,
    pp. 94-99, 2009.

  93. Integrated High Performance (100) and (110) Oriented Single-Grain Si TFTs without Seed Substrate
    T. Chen; R. Ishihara; J. van der Cingel; A. Baiano; M.R. Tajari Mofrad; H. Schellevis; C.I.M. Beenakker;
    In International Electron Devices Meeting (IEDM 2009),
    Baltimore, MD, USA: IEEE, pp. 179-182, 2009.
    document

  94. Single Grain Si TFTs for RF and 3DICs
    R. Ishihara; A. Baiano; T. Chen; J. Derakhshandeh; M.R. Tajari Mofrad; M. Danesh; N. Saputra; J. Long; C.I.M. Beenakker;
    In 2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT),
    Xian, China, 2009.

  95. High Performance n- and p-channel Strained Single Grain Silicon TFTs using Excimer Laser
    A. Baiano; R. Ishihara; K. Beenakker;
    In Mater. Res. Soc. Symp. Proc,
    Warrendale, PA, Materials Research Society, pp. 1-11, 2009.
    document

  96. Single-Grain Si Thin Film Transistors SPICE Model, Analog and RF Circuit Applications
    A. Baiano; M. Danesh; N. Saputra; R. Ishihara; J. Long; W. Metselaar; C.I.M. Beenakker; N. Karaki; Y. Hiroshima; S. Inoue;
    Solid State Electronics,
    Volume 52, Issue 9, pp. 1345-1352, Aug. 2008.

  97. Single-Grain Si TFTs and Circuits Fabricated Through Advanced Excimer-Laser Crystallization
    R. Ishihara; Vikas Rana; Ming He; Y. Hiroshima; S. Inoue; Wim Metselaar; Kees Beenakker;
    Solid State Electronics,
    Volume 52, pp. 353-358, 2008.

  98. Location and Crystallographic Orientation Control of Si Grains Through Combined Metal Induced Lateral Crystallization and micro-Czochralski process
    Chen Tao; Ryoichi Ishihara; J. W .Metselaar; C.I.M Beenakker; Meng-Yue Wu;
    JJAP,
    Volume 47, Issue 3, pp. 1880-1883, 2008.

  99. An Assessment of angstrom micro-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integation
    N. Saputra; M. Danesh; A. Baiano; R. Ishihara; J.R. Long; N. Karaki; S. Inoue;
    IEEE Journal of Solid-State Circuits,
    Volume 43, Issue 7, pp. 1563-1576, Jul. 2008.

  100. An Assessment of _-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration
    N. Saputra; M. Danesh; A. Baiano; R. Ishihara; J. R. Long; N. Karaki; S. Inoue;
    IEEE Journal of Solid State Circuits,
    Volume 43, Issue 7, pp. 1563-1576, 2008.

  101. Formation of Location-Controlled Germanium Grains by Excimer Laser
    A. Baiano; R. Ishihara; J. van d. Cingel; K. Beenakker;
    ECS Transactions Thin Film Transistors,
    Volume 13, Issue 9, Oct. 2008.

  102. Reliability Analysis of Single Grain Si TFT using 2D Simulation
    A. Baiano; J. Tan; R. Ishihara; K. Beenakker;
    ECS Transactions Thin Film Transistors,
    Volume 13, Issue 9, Oct. 2008.

  103. Investigation of Local Electrical Properties of Coincidence-Site-Lattice Boundaries in Location-Controlled Silicon Islands Using Scanning Capacitance Microscopy
    N. Matsuki; R. Ishihara; A. Baiano; K. Beenakker;
    Applied Physics Letters,
    Volume 93, Issue 6, Aug. 2008.

  104. CMP effect on the quality of thin silicon film crystallized by ""angstrom""""micro""-Czochralski process with excimer laser irradiation
    J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; J. van der Cingel; C.I.M Beenakker;
    In The 4th International Thin-Film Transistor Conference ITC 08,
    Seol, Korea, 2008.

  105. Monolithic Three-Dimensional Stacking of Integrated Circuits with a Low-Temperature Process
    Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; Ryoichi Ishihara; Kees Beenakker;
    In Proceedings of SAFE 2008,
    Velhoven, Netherlands, 2008.

  106. Optimizing Chemical Mechanical Polishing process in 3D-IC
    J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; J. Van der Cingel; C.I.M Beenakker;
    In Proceedings of SAFE 2008,
    Velhoven, Netherlands, 2008.
    document

  107. Monolithic Stacking of Single-Grain Thin-Film Transistors
    Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
    In Proceedings of Active-Matrix and Flat Panel Displays 2008,
    Tokyo, Japan, 2008.

  108. 2D Simulation of Hot-Carrier-Induced Degradation and Reliability Analysis for Single Grain Si TFTs
    J. Tan; A. Baiano; R. Ishihara; K. Beenakker;
    In Proceeding of SAFE,
    2008.

  109. Germanium Grains Location Control using ""angstrom""""micro""-Czochralski Process
    A. Baiano; R. Ishihara; J. van d. Cingel; K. Beenakker;
    In Proceeding of SAFE,
    2008.

  110. A Flexible Active-Matrix Electronic Paper with Integrated Display Driver using the -Czochralski Single Grain TFT Technology
    W. M. Chim; N. Saputra; A. Baiano; R. Ishihara; A. van Genderen;
    In Proceeding of PRORISC,
    2008.

  111. Monolithic 3D Integration of Single-Grain Si TFTs
    M.R. Tajari Mofrad; R. Ishihara; J. Derakhshandeh; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
    In Material Research Society Symposium Proceedings,1066,A20,2008,MRS Spring Meeting,
    San Francisco, CA, USA, 2008.

  112. Single-Grain Si TFTs for Flexible Electronics and 3D-ICs
    R. Ishihara; A. Baiano; N. Saputra; M. Danesh; N. Matsuki; T. Chen; V. Rana; M. He; J. Long; Y. Hiroshima; N. Karaki; S. Inoue; C.I.M. Beenakker;
    In International TFT Conference,
    Jan. 2008.

  113. Fabrication of Three-Dimensional Inverters Using the ""angstrom""""micro""-Czochralski
    Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
    In European Solid-State Device Research Conference 2008,
    Edinburgh, Scotland, 2008.

  114. Agglomeration of amorphous silicon film with high energy density excimer laser irradiation
    Ming He; Ryoichi Ishihara; Wim Metselaar; Kees Beenakker;
    Thin Solid Films,
    Volume 515, pp. 2872-2878, 2007.

  115. Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the micro-Czochralski (grain filter) process
    R. Ishihara; D. Danciu; F. Tichelaar; M. He; Y. Hiroshima; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    Journal of Crystal Growth,
    Volume 299, Issue 2, pp. 316-321, Feb. 2007.

  116. Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100oC
    Ming He; Ryoichi Ishihara; Ellen J. J. Neihof; Yvonne van Andel; Hugo Schellevis; Wim Metselaar; Kees Beenakker;
    Japanese Journal of Applied Physics,
    Volume 46, Issue 3B, pp. 1245-1249, Mar. 2007.

  117. High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by Micro-Czochralski Process with Capping Layer
    Rana Vikas; Ryoichi Ishihara; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    IEEE Transactions on Electron Devices,
    Volume 54, Issue 1, pp. 124-130, Jan. 2007.

  118. Simulation of twin boundary effect on characteristics of single-grain silicon thin film transistors
    F. Yan; P. Migliorato; R. Ishihara;
    Applied Physics Letters,
    Volume 91, pp. 073509, 2007.

  119. Single-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs
    Ryoichi Ishihara; Vikas Rana; Ming He; Wim Metselaar; Kees Beenakker; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue;
    In Society for Information Display 2007 International Symposium,
    pp. 252-255, 2007.

  120. Local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning spread resistance microscopy
    N. Matsuki; R. Ishihara; A. Baiano; Y. Hiroshima; S. Inoue; C.I.M Beenakker;
    In Proceeding of The 14th International Display Workshops,
    pp. 489-492, 2007.

  121. Orientation and Location Controlled Si Grains Through Combined MILC and ""angstrom""""micro""-Czochralski Process
    C. Tao; R. Ishihara; J. W. Metselaar; C. I. M. Beenakker;
    In Proceeding of The 14th International Display Workshops,
    pp. 2011-2012, 2007.

  122. Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscope
    N. Matsuki; R. Ishihara; A. Baiano; Y. Hiroshima; S. Inoue; C.I.M Beenakker;
    In Proceeding of SAFE,
    2007.

  123. SPICE Modeling with NQS effect of Single-Grain Si TFTs using BSIMSOI
    Alessandro Baiano; Ryoichi Ishihara; Nobuo Karaki; Satoshi Inoue; Wim Metselaar; Kees Beenakeer;
    In Proceeding of SAFE,
    2007.

  124. Analog and RF Design Using the _-Czochralski Single Grain TFT Technology
    Nitz Saputra; Mina Danesh; Alessandro Baiano; Ryoichi Ishihara; Satoshi Inoue; Nobuo Karaki; John R. Long;
    In Proceeding of PRORISC,
    2007.

  125. Single-Grain Si Thin-Film Transistors for Analog and RF Circuit Applications
    N. Saputra; M. Danesh; A. Baiano; R. Ishihara; J.R. Long; J.W. Metselaarand; C.I.M. Beenakker; N. Karaki; Y. Hiroshima; S. Inoue;
    In Proceeding of ESSDERC 2007,
    pp. 107-110, 2007.

  126. Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy
    V. Nadazdy; V. Rana; R. Ishihara; S. Lanyi; R. Durny; J.W. Metselaar; C.I.M. Beenakker;
    In Mater. Res. Soc. Proc.,
    2007.

  127. Preparation of large, location-controlled Si grains by excimer-laser crystallization of a-Si films sputtered at 100oC
    M. He; R Ishihara; C. I. M. Beenakker;
    In Mater. Res. Soc. Proc.,
    2007.

  128. DC modeling of Single-Grain Si TFTs using BSIMSOI
    A. Baiano; R. Ishihara; N. Karaki; S. Inoue; W. Metselaar; K. Beenakker;
    In International TFT Conference,
    pp. 200-203, Jan. 2007.

  129. SPICE Modeling of Single-Grain Si TFTs using BSIMSOI
    A. Baiano; R. Ishihara; N. Saputra; J. Long; N. Karaki; S. Inoue; W. Metselaar; K. Beenakeer;
    In ECS Transactions-ULSI vs. TFT Conference,
    Jul. 2007.

  130. Single-grain Si TFTs fabricated at 100oC for microelectronics on a plastic substrate
    M. He; R. Ishihara; C. I. M. Beenakker;
    In 2007 MRS Proceedings: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology,
    2007.

  131. Local electrical properties of coincidence site lattice boundaries in location-controlled silicon islands by scanning capacitance microscopy
    Nobuyuki Matsuki; Ryoichi Ishihara; Chen Tao; Yasushi Hiroshima; J. W .Metselaar; C.I.M Beenakker;
    In AMFPD07,
    pp. 251-253, 2007.

  132. Location and Orientation Control of Si Grains Through Combined MILC and _-Czochralski process
    Chen Tao; Ryoichi Ishihara; J. W .Metselaar; C.I.M Beenakker;
    In AM-FPD07,
    pp. 271-273, 2007.

  133. Textured Self-assembled Square-shaped Poly-Si Grains by Multiple Shots Excimer Laser Crystallization
    Ming He; Ryoichi Ishihara; Wim Metselaar; Kees Beenakker;
    Journal of Applied Physics,
    Volume 100, 2006.

  134. A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
    R. Ishihara; A. Glazer; Y. Raab; P. Rusian; M. Dorfan; B. Lavi; I. Leizerson; A. Kishinevsky; Y. van Andel; X. Cao; J. W. Metselaar; C. I. M. Beenakker; S. Stolyarova; Y. Nemirovsky;
    Journal of IEICE,
    Volume E89-C, Issue 10, pp. 136-140, 2006.

  135. Capping Layer on Thin Si Film for mu-Czochralski Process with Excimer Laser Crystallization
    Rana Vikas; Ryoichi Ishihara; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; Wim Metselaar; Kees Beenakker;
    Japanese Journal of Applied Physics,
    Volume 45, Issue 5, pp. 4340-4343, 2006.

  136. Effects of Capping Layer on Grain Growth with mu-Czochralski Process during Excimer Laser Crystallization
    Ming He; Ryoichi Ishihara; Yasushi Hiroshima; Satoshi Inoue; Tatsuya Shimoda; Wim Metselaar; Kees Beenakker;
    Japanese Journal of Applied Physics,
    Volume 45, Issue 1, 2006.

  137. Preferred <100> surface and in-plane orientations in self-assembled poly-Si by multiple excimer-laser irradiation
    M. He; R Ishihara; C. I. M. Beenakker;
    Electrochemical Society Transaction,
    Volume 3, Issue 8, pp. 167-172, Oct. 2006.

  138. Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy
    V. Nadazdy; V. Rana; R. Ishihara; S. Lanyi; R. Durny; J.W. Metselaar; C.I.M. Beenakker;
    In Polycrystalline Thin-Film Silicon Science and Technology,
    2006.
    document

  139. Preparation of Large Poly-Si Grains by Excimer Laser Crystallization of Sputtered a-Si film with Processing Temperature of 100 C
    M. He; R. Ishihara; E.J.J. Neihof; Y. van Andel; H. Schellevis; C.I.M. Beenakker;
    In Proc. AM-FPD 06,
    2006.
    document

  140. Preparation of large, location-controlled Si grains by excimer laser crystallization of -Si film sputtered at 100 C
    M. He; E.J.J. Neihof; Y. van Andel; H. Schellevis; R. Ishihara; J.W. Metselaar; C.I.M. Beenakker;
    In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006,
    2006.
    document

  141. Preferred <100> Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation
    M. He; R. Ishihara; W. Metselaar; Kees Beenakker;
    In 2006 Joint International Meeting of the Electrochemical Society, Symposium Thin Film Transistors 8 (TFT8),
    Cancun, Mexico, Oct. 2006.
    document

  142. Single-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs
    Ryoichi Ishihara; Vikas Rana; Ming He; Wim Metselaar; Kees Beenakker;
    In 2006 8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT),
    Shanghai, China, pp. 174-177, Oct. 2006.
    document

  143. Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization
    R. Ishihara; M. He; V. Rana; Y. Hiroshima; S. Inoue; T. Shimoda; J.W. Metselaar; C. I. M. Beenakker;
    Thin Solid Films,
    Volume 487, Issue 1-2, pp. 97-101, Sep. 2005.

  144. Switch-on undershoot current observed in thin film transistors
    Feng Yan; Piero Migliorato; Yi Hong; V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda;
    Journal of Applied Physics,
    Volume 87, Issue 1, 2005.

  145. Dependence of Single-Crystalline Si Thin-Film Transistor Characteristics on the Channel Position inside a Location-Controlled Grain
    V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda; J.W.Metselaar; C. I.M. Beenakker;
    IEEE Transactions on Electron Devices,
    Volume 52, Issue 12, Dec. 2005.

  146. High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by _-Czochralski Process with Capping Layer
    Rana Vikas; Ryoichi Ishihara; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    In IEDM 2005,
    2005.

  147. A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
    R. Ishihara; A. Glazer; Y. Raab; P. Rusian; M. Dorfan; B. Lavi; I. Leizerson; A. Kishinevsky; Y. van Aandel; X. Cao; J. W. Metselaar; C. I. M. Beenakker; S. Stolyarova; Y. Nemirovsky;
    In IDW05,
    2005.

  148. Process Simulation of Laser Crystallization and Analysis of Crystallization Process of Si films
    M. Kimura; R. Saito; S. Tsukamoto; Y. Hiroshima; S. Inoue; T. Shimoda; R. Ishihara;
    In IDW05,
    2005.

  149. Capping Layer on Thin Si Film for micro-Czochralski Process with Excimer Laser Crystallization
    R. Vikas; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    In AMLCD05,
    2005.

  150. Advanced excimer-laser crystallization process for single-crystalline thin film transistors
    R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; J.W. Metselaar; C.I.M. Beenakker;
    Thin Solid Films,
    Volume 427, Issue 1-2, pp. 77-85, Mar. 2003.

  151. Phase-Field Modelling of Excimer Laser Lateral Crustallization of Silicon Thin Films
    A. Burtsev; M. Apel; R. Ishihara; C.I.M. Beenakker;
    Thin Solid Films,
    Volume 427, Issue 1-2, pp. 309-313, Mar. 2003.

  152. Poly-Si TFT Structures
    R. Ishihara;
    In Thin Film Transistors, Materials and Processes,
    Boston, Kluwer Academic Publishers, 2003.

  153. Single-crystalline Si TFTs fabricated by the µ-Czochralski (grain-filter) process
    Y. Hiroshima; R. Ishihara; V. Rana; D. Abe; S. Inoue; T. DShimoda; J.W. Metselaar; C.I.M. Beenakker;
    In 2003 Int. Workshop on Active-Matrix Liquid-Crystal Displays,
    Tokyo, Japan, pp. 157-158, Jul. 2003.
    document

  154. Dependence of single-crystalline Si TFT characteristics on the channel position in a location-controlled grain
    V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Higashi; S. Inoue; T. Shimoda; J.W. Metselaar;
    In 2003 Int. Workshop on Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials,
    Tokyo, pp. 17-20, Jul. 2003.
    document

  155. Dynamic behavior of polycrystalline and single grain silicon TFTs
    P. Migliorato; F. Yan; S. Inoue; T. Shimoda; R. Ishihara;
    In Proc. 10th International Display Workshop,
    Fukuoka, Japan, Dec. 2003.

  156. High-performance TFTs fabricated inside a location-controlled grain by µ-Czochralski (grain-filter) process
    V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Higashi; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    In Proc. 3rd International Meeting on Information Display,
    Deagu, Korea, pp. 1-4, Jul. 2003.
    document

  157. High Performance P-Channel Single-Crystalline Si TFTs Fabricated Inside a Location-Controlled Grain by mu-Czochralski Process
    V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda; J.W. Metselaar; C. I.M. Beenakker;
    In Proc. SAFE 2003,
    Veldhoven, The Netherlands, pp. 639-642, Nov. 2003. ISBN 90-73461-39-1.
    document

  158. Energy Density Window for Location-Controlled Si Grains by Dual-Beam Excimer-Laser
    A. Burtsev; R. Ishihara; C. I. M. Beenakker;
    In Thin Solid Films,
    pp. 199-206, Nov. 2002. ISSN 0040-6090.

  159. Single-Crystalline Si Thin-Film Transistors Fabricated with mu-Czochralski (Grain-Filter) Process
    R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; J.W. Metselaar; C.I.M. Beenakker;
    In M. Matsumura (Ed.), Tech Dig. 2002 Intern. Workshop on Active-Matrix LCDs - TFT Technologies and Rel. Materials,
    Tokyo, Japan, pp. 53-56, Jul. 2002 2002.

  160. High Performance P-Channel Single-Crystalline Si Thin Film Transistors
    V. Rana; R. Ishihara;
    In SAFE 2002,
    Veldhoven, The Netherlands, pp. 35, Nov. 2002. ISBN 90-73461-32-4.

  161. Filtered Photodiode Arrays for NADH Fluorescence Analysis
    V.P. Iordanov; J. Bastemeijer; R. Ishihara; P.M. Sarro; A. Bossche; M. Vellekoop;
    In Proc. SeSens 2002,
    Veldhoven, The Netherlands, STW, pp. 627-630, Nov. 2002. ISBN 90-73461-33-2.

  162. Single-crystalline Si thin film transistors with electron cyclotron resonance plasma enhanced chemical vapor deposited gate SiO2
    R. Ishihara; Y. Hiroshima; D. Abe; B.D. van Dijk; P.Ch. van der Wilt; S. Higashi; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    In Proc. Eurodisplay 2002,
    Nice, France, pp. 407-409, Oct. 2002. ISBN 2-9507804-3-1.

  163. Single-Crystalline Si TFTs Fabricated with Micro-Czochralski (grain-filter) process
    R. Ishihara; B.D. van Dijk; P.Ch. van der Wilt; J.W. Metselaar; C.I.M. Beenakker;
    In Y.B. Kim; I.G. Kang (Ed.), Proc. 2nd International Meeting on Information Display,
    Daegu, Korea, pp. 159-162, Aug. 2002. ISSN 1598-3196.

  164. Dynamic characteristics of single grain silicon TFTs
    F. Yan; N. Bavidge; P. Migliorato; R. Ishihara;
    In Proc. 202nd Meeting of the Electrochemical Societey, Thin Film Transistor Technologies VI,
    pp. 75-81, 2002.

  165. Location-control of large grains by micro-Czochralski (grain filter) process and its application to single-crystalline silicon thin-film transistors
    R. Ishihara; P.C. van der Wilt; B.D. van Dijk; J.W. Metselaar; C.I.M. Beenakker;
    In Proc. 202nd Meeting of the Electrochemical Societey, Thin Film Transistor Technologies VI,
    pp. 63-74, 2002.

  166. CMOS-Compatible Optical Filter for High-Throughput Enzymatic-Analysis Devices
    V.P. Iordanov; R. Ishihara; P.M. Sarro; J. Bastemeijer; A. Bossche; M.J. Vellekoop;
    In IEEE Sensors 2002,
    Hyatt Orlando, Orlando, Florida, USA, pp. 9.6/1-9.6/4, Jun. 2002. ISBN 0-7803-7455-X.

  167. A Combined TEM and Time-Resolved Optical Reflectivity Investigation Into The Excimer-Laser Crystallization of a-Si Films
    F. Voogt; R. Ishihara;
    Thin Solid Films,
    Volume 383, pp. 45-47, 2001.

  168. Formation of location-controlled crystalline islands using substrate-embedded-seeds in excimer-laser crystallization of silicon films
    P.Ch. van der Wilt; B.D. van Dijk; G.J. Bertens; R. Ishihara; C.I.M. Beenakker;
    Appl. Phys. Lett.,
    Volume 72, Issue 12, pp. 1819, 2001.

  169. Heterogeneous Nucleation from Molten-Si Induced by Excimer-Laser Melting of Si Thin-Films
    R. Ishihara; F. C. Voogt;
    In Polycrystalline Semiconductors VI - Bulk Materials, Thin Films, and Devices,
    Switzerland, Scitech Publ., 2001.

  170. Si Based Thin-Film Filter with High Visible-Over-UV Selectivity for Biochemical Fluorescence Analysis
    V.P. Iordanov; G.W. Lubking; R. R. Ishihara; R.F. Wolffenbuttel; P.M. Sarro; M.J. Vellekoop;
    In The 11th Intern. Conf. on Solid-State Sensors and Actuators (Transducers 01),
    Munich, Germany, pp. 1182-1185, Jun. 2001. ISBN 3-540-42150-5.

  171. Excimer-Laser Lateral Crystallization Scenario of Silicon Thin Films by Phase-Field Modelling
    A. Burtsev; M. Apel; R. Ishihara;
    In Proceeding for 4th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE),
    Veldhoven, pp. 8-12, 2001.
    document

  172. Properties of a Poly-Si Film Grown from a Grid of Grain Filters by Excimer-Laser Crystallization
    P.Ch. van der Wilt; B.D. van Dijk; G.J. Bertens; R. Ishihara;
    In Proc. SAFE 2001,
    Veldhoven, The Netherlands, pp. 1-8, Nov. 2001.
    document

  173. Effects of Grain-Boundaries in Excimer-Laser Crystallized Poly-Si Thin-Film Transistors
    R. Ishihara;
    In Proc. 31st Euro. Solid State Device Res. Conf.,
    Nuremberg, Germany, pp. 479-482, Sep. 2001.

  174. Advanced Excimer-Laser Crystallization Techniques of Si Thin-Film for Location Control of Large Grain on Glass
    R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; F.C. Voogt; G.J. Bertens; J.W. Metselaar; C.I.M. Beenakker;
    In Proc. SPIE Flat Panel Display Technology and Display Metrology II,
    pp. 14-23, 2001.

  175. Study of Crystal Growth in Grain-Filters for Location-Controlled Excimer-Laser Crystallization
    P.C. van der Wilt; B.D. van Dijk; G.J. Bertens; R. Ishihara;
    In Advanced Materials and Devices for Large-Area Electronics (Mat. Res. Soc. Proc.),
    2001.

  176. Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization
    B.D. van Dijk; P.Ch. van der Wilt; G.J. Bertens; L.K. Nanver; R. Ishihara;
    In Advanced Materials and Devices for Large-Area Electronics (Mat. Res. Soc. Proc.),
    2001.

  177. Location-Control of Large Si Grains by Dual-Beam Excimer-Laser and Thick Oxide Portion
    R. Ishihara; A. Burtsev; P. F. A. Alkemade;
    Jpn. Journal of Applied Physics,
    Volume 39, pp. 3872-3878, 2000. ISSN 0021-4922.

  178. Enlargement of Location Controlled Si Grain by Dual-Beam Excimer-Laser Melting with Bump Structure
    A. Burtsev; R. Ishihara;
    Applied Surface Science 154-155,
    pp. 152-158, 2000. ISSN 0169-4332.

  179. Processing window for location-controlled Si grains by dual-beam excimer-laser
    A. Burtsev; R. Ishihara;
    In Proc. SAFE 2000,
    Veldhoven, The Netherlands, 2000.

  180. Energy Density Window for Location-Controlled Si Grains by Dual-Beam Excimer-Laser
    A. Burtsev; R. Ishihara;
    In Proc. SAFE 2000,
    Veldhoven, 29 november-1 december, pp. 15-22, 2000. ISBN 90-73461-24-3.

  181. Temperature-Gradient Driven Directional Solidification of Si thin-film by Excimer-Laser Melting
    R. Ishihara;
    In Proc. of The Int. Workshop on Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials,
    2000.

  182. Effects of Grain-Boundaries on Excimer-Laser Crystallized Poly-Si Thin-Film Transistors
    R. Ishihara;
    In Proc. International Workshop on Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials,
    Tokyo, Japan, pp. 259-260, Jul. 2000.

  183. Location Control of Laterally Columnar Si Grains by Dual-Beam Excimer-Laser Melting of Si Thin-Film
    R. Ishihara;
    In Proc. Mat. Res. Soc.: Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays,
    2000.

  184. Location-Controlled Large-Grains in Near-Agglomeration Excimer-Laser Crystallized Silicon Films
    P.C. van der Wilt; R. Ishihara; J. Bertens;
    In Proc. Mat. Res. Soc.: Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays,
    2000.

  185. Dual-beam Excimer-Laser Induced Si Grain Size Enlargement in an a-Si/Structured SiO2/Metal Stack
    A. Burtsev; R. Ishihara;
    In Jean Pierre Veen (Ed.), SAFE 99,
    Mierlo, The Netherlands, 24, STW Technology Foundation, pp. 665-670, 1999. ISBN 90-73461-18-9.

  186. Modelling of Thin-Film Transistors in a Polycrystalline Silicon Layer with Large Grains
    A.J.G. Spiekerman; B.D. van Dijk; R. Ishihara;
    In Proc. of the fourth Symposium on Thin Film Transistor Technologies, the Electrochemical Society,
    Pennington, New Jersey, pp. 249-255, 1999. ISBN 1-56677-216-8.

  187. Effects of Gate Oxide Deposition Methods on Excimer Laser Crystallized poly-Si Thin Film Transistors
    B. van Dijk; J. Bertens; R. Ishihara;
    In E. Lueder (Ed.), 19th International Display Research Conference, Euro Display 99,
    Berlin, Germany, Society for Information Display, pp. 335-338, Sep. 1999. 3-8007-2478-2.

  188. Microtexture Analysis of Location Controlled Large Si Grain Formed by Excimer-Laser Crystallization Method
    R. Ishihara; P.F.A. Alkemade;
    In 1999 International Workshop on Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials -,
    Tokyo, Japan, The Japan Societies of Applied, pp. 99-102, Jul. 1999.

  189. Werkwijze voor het vervaardigen van dunne films polykristallijn silicium en volgens die werkwijze vervaardigde films
    P.C. van der Wilt; R. Ishihara;
    Nederlandse Octrooiaanvraag nr. 1013790, Dec 1999.

  190. Grain Location-Control in Excimer-Laser Crystallised Thin Silicon Films
    P. Ch. van der Wilt; R. Ishihara;
    Physica Status Solidi (a),
    Volume 166, Issue 2, pp. 619-627, 1998.

  191. Location Control of Crystal Si Grain Followed by Excimer-Laser Melting of Si Thin-Films
    R. Ishihara; P.Ch. van der Wilt;
    Jpn.J.Appl.Phys.,
    Volume 37, pp. L15-L17, Jan. 1998.

  192. Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
    R. Ishihara; A. Burtsev;
    Japan. J. Appl. Phys,
    Volume 37, Issue 1, pp. 1071-1075, 1998.

  193. Location Controlled Large Silicon Grains for New Large Area Applications
    R. Ishihara;
    In Jean Pierre Veen (Ed.), SAFE 98,
    Mierlo, The Netherlands, STW Technology Foundation, pp. 225-234, 1998. ISBN 90-73461-15-4.

  194. Location Single-Crystalline Silicon Thin Film Transistors Inside a Single, Location Controlled Grain
    B.D. van Dijk; R. Ishihara;
    In Proc. of SAFE '98,
    Mierlo, pp. 143-145, 1998.

  195. Grain Matrix Made with Excimer-Laser Crystallization of Thin Silicon Films
    P. Ch. van der Wilt; R. Ishihara;
    In Polycrystalline Semiconductors V, - Bulk Materials, Thin Films and Devices-, Proceedings of the Fifth International Conference,
    Schwabisch Gmund, Germany, Sept. 1998.

  196. Excimer-laser-produced single-crystal silicon thin-film transistors
    R. Ishihara; M. Matsumura;
    Japanese Journal of Applied Physics,
    Volume 36, pp. 6167-6170, 1997.

  197. Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
    R. Ishihara;
    In the 1997 International Conference on Solid State Devices and Materials,
    Hamamatsu, Japan, pp. 360-361, Sep. 1997.

  198. Two-dimensional location confinement of crystal Si grain followed by excimer-laser melting of Si thin films
    R. Ishihara; P.C. van der Wilt;
    In International Conference on Advanced Materials and European Materials Research Society Spring Meeting,
    Strasbourg, Jun. 1997.

  199. Dual-beam excimer-laser irradiation of a-Si film on glass substrate
    R. Ishihara; A. Burtsev;
    In Ext. Abstr. 1997, Int. Conference on Solid State Devices and Materials,
    Hamamatsu, pp. 360-365, 1997.

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Last updated: 24 Sep 2018