Electronic Components, Technology and Materials
Department of Microelectronics

prof.dr. C.I.M. Beenakker

Professor
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

Expertise: Emeritus professor

Biography

Kees Beenakker was born in Leiden in 1948. In 1971 he got his M. Sc.in chemistry and physics at Leiden University and joined as an Ph. D. student the FOM-Institute for Atomic and Molecular Physics in Amsterdam. After graduation in 1974 he joined Philips Research Laboratories in Eindhoven. There he was involved in various research projects related to IC technology. In 1982 he moved to the Philips Semiconductor Division in Nijmegen to become head of the corporate assembly process and equipment development. In that position first intensive contacts were established with the microelectronics industry in the Far East.

In 1987 he resigned at Philips and became cofounder of Eurasem, a European hi-rel IC assembly company.

In 1989 Kees Beenakker joined Dimes and is since 1990 full professor at the faculty of EEMCS (Electrical Engineering, Mathematics and Computer Science). From 1990 till 2004 he was chairman of the ECTM laboratory. From 1999 till 2009 he was chairman of the department of Microelectronics and Computer Engineering and from March 2007 till May 2012 he was scientific director of DIMES, the Delft institute of microsystems and nanoelectronics. Since May 2012 he is director of the TU Delft-Beijing Research Centre in Beijing and is alternately located in Delft and in Beijing.

Kees Beenakker is a member of the national Medea advisory committee, member of the scientific board of the Debije Institute, the ENIAC scientific council and board member of the Advanced Packaging Centre at Boschman Technologies. He is a founder of the Else Kooi Foundation, the SAFE conference, the Tsing Hua-TU Delft training centre of microelectronics technology in Beijing and the Fudan-TU Delft International school of microelectronics in Shanghai. Since March 2006 he holds a honorary guest professorship at the Tsinghua University in Beijing and since 2012 also from the Institute of Semiconductors of the Chinese Academy of Sciences in Beijing. Since June 2008 he is elected chaiman of the academic council of Point-One, the national initiative on nanoelectronics and embedded systems. His specific research interests include technology for thin films and integrated circuits.

Publications

  1. Manufacturing uniform field silicon drift detector using double boron layer
    Negin Golshani; C.I.M Beenakker; Ryoichi Ishihara;
    Nuclear Instruments and Methods in Physics Research Section A,
    Volume 794, pp. 206-214, 2015.

  2. High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
    Negin Golshani; Jaber Derakhshandeh; C.I.M. Beenakker; R. Ishihara;
    Solid-State Electronics,
    Volume 105, pp. 6-11, 2015.

  3. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications
    Golshani, Negin; Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.;
    APL Materials,
    Volume 2, Issue 10, pp. 100702, 2014.
    document

  4. Dominant thermal boundary resistance in multi-walled carbon nanotube bundles fabricated at low temperature
    Vollebregt, Sten; Banerjee, Sourish; Chiaramonti, Ann N; Tichelaar, Frans D; Beenakker, Kees; Ishihara, Ryoichi;
    Journal of Applied Physics,
    Volume 116, Issue 2, pp. 023514, 2014.

  5. Carbon nanotube vertical interconnects fabricated at temperatures as low as 350 �C
    Vollebregt, Sten; Tichelaar, FD; Schellevis, H; Beenakker, CIM; Ishihara, R;
    Carbon,
    Volume 71, pp. 249--256, 2014.

  6. Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics:
    Ryoichi ISHIHARA; Jin ZHANG; Miki TRIFUNOVIC; Jaber DERAKHSHANDEH; Negin GOLSHANI; Daniel M.R. TAJARI MOFRAD; Tao CHEN; Kees BEENAKKER; Tatsuya SHIMODA;
    IEICE Transactions on Electronics,
    Volume E97.C, Issue 4, pp. 227--237, 2014.

  7. Carbon Nanotube Vertical Interconnects: Prospects and Challenges
    Vollebregt, S; Beenakker, CIM; Ishihara, R;
    In Micro-and Nanoelectronics: Emerging Device Challenges and Solutions,
    CRC Press, 2014.

  8. Size-Dependent Effects on the Temperature Coefficient of Resistance of Carbon Nanotube Vias
    Vollebregt, Sten; Banerjee, Sourish; Beenakker, Kees; Ishihara, Ryoichi;
    Electron Devices, IEEE Transactions on,
    Volume 60, Issue 12, pp. 4085--4089, 2013.

  9. Thermal conductivity of low temperature grown vertical carbon nanotube bundles measured using the three-ω method.
    S. Vollebregt; S. Banerjee; C.I.M. Beenakker; R. Ishihara;
    Applied Physics Letters,
    Volume 102, Issue 19, pp. 1-4, 2013.

  10. Towards the integration of carbon nanotubes as vias in monolithic three-dimensional integrated circuits
    S. Vollebregt; Chiaramonti A.N.; J. van der Cingel; C.I.M. Beenakker; R. Ishihara;
    Japanese Journal of Applied Physics. Part 1, Regular Papers Brief Communications & Review Papers,
    Volume 52, Issue 1-5, 2013.

  11. Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si.
    Jin Zhang; M. Trifunovic; M. van der Zwan; H. Takagishi; R. Kawajiri; T. Shimoda; C.I.M. Beenakker; R. Ishihara;
    Applied Physics Letters,
    Volume 102, Issue 24, pp. 1-4, 2013.

  12. Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology
    Sten Vollebregt; Ryoichi Ishihara; Jaber J. Derakhshandehohan van der Cingel; Hugo Schellevis; C.I.M. Beenakker;
    In Nanoelectronic Device Applications Handbook,
    Taylor and Francis, 2013.

  13. Carbon Nanotubes as Interconnects in Integrated Circuits
    Vollebregt, S; Ishihara, R; Beenakker, CIM;
    In Dekker Encyclopedia of Nanoscience and Nanotechnology, Second Edition,
    Taylor and Francis, 2013.

  14. Carbon nanotube vias fabricated at back-end of line compatible temperature using a novel CoAl catalyst
    S. Vollebregt; H. Schellevis; C.I.M. Beenakker; R. Ishihara;
    In S. Ogawa (Ed.), IEEE International Interconnect Technology Conference-technical papers,
    Kyoto, Japan, Jun. 2013.

  15. Location controlled high performance single-grain Ge TFTs on glass substrate
    T. Chen; R. Ishihara; C.I.M. Beenakker;
    Solid-State Electronics,
    Volume 69, pp. 94-98, Mar. 2012. DOI 10.1016/j.sse.2011.11.027.

  16. Monolithic 3D-ICs with single grain Si thin film transistors
    R. Ishihara; J. Derakhshandeh; M.R. Tajari Mofrad; T. Chen; N. Golshani; C.I.M. Beenakker;
    Solid-State Electronics,
    Volume 71, pp. 80-87, May 2012. DOI 10.1016/j.sse.2011.10.025.

  17. Thick single grain silicon formation with microsecond green laser crystallization
    A. Arslan; H.J. Kahlert; P. Oesterlin; D.T. Mofrad; R. Ishihara; C.I.M. Beenakker;
    ECS Transactions,
    Volume 50, Issue 8, pp. 35-42, Oct. 2012. ISBN 978-1-62332-007-2.

  18. Fast etching of molding compound by an Ar/O2/CF4 plasma and process improvements for semiconductor package decapsulation
    Jiaqi Tang; D. Gruber; J.B.J. Schelen; H.-J. Funke; C.I.M. Beenakker;
    ECS Journal of Solid State Science and Technology,
    Volume 1, Issue 4, pp. P175-P178, Aug. 2012. DOI 10.1149/2.019204jss.

  19. Influence of the growth temperature on the first and second-order Raman band ratios and widths of carbon nanotubes and fibers
    S. Vollebregt; R. Ishihara; F.D. Tichelaar; Y. Hou; C.I.M. Beenakker;
    Carbon,
    Volume 50, Issue 10, pp. 3542-3554, Aug. 2012. DOI 10.1016/j.carbon.2012.03.026.

  20. Integrating carbon nanotubes as vias in a monolithic 3DIC process
    S. Vollebregt; R. Ishihara; A.N. Chiaramonti; J. van der Cingel; C.I.M. Beenakker;
    In Proc. International Conference on Solid State Devices and Materials (SSDM 2012),
    Kyoto, Japan, pp. 1170-1171, Sep 2012.

  21. Reliability of single-grain silicon TFTs fabricated from spin-coated liquid-silicon
    Z. Jin; R. Ishihara; H. Takagishi; R. Kawajiri; T. Shimoda; C.I.M. Beenakker;
    In Proc. 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),
    Kyoto, Japan, pp. 309-312, Jul. 2012. ISBN: 978-1-4673-0399-6.

  22. Electrical characterization of carbon nanotube vertical interconnects with different lengths and widths
    S. Vollebregt; R. Ishihara; F.D. Tichelaar; J. van der Cingel; C.I.M. Beenakker;
    In IEEE International Interconnect Technology Conference (IITC 2012),
    San Jose, CA, USA, pp. 1-3, Jun. 2012. DOI 10.1109/IITC.2012.6251578.

  23. Single-grain Si TFTs fabricated by liquid-Si and long-pulse excimer-laser
    R. Ishihara; Jin Zhang; M. Trifunovic; M. van der Zwan; H. Takagishi; R. Kawajiri; T. Shimoda; C.I.M. Beenakker;
    In Y. Kuo (Ed.), ECS Transactions,
    Honolulu, USA, pp. 49-53, Oct. 2012. ISBN 978-1-62332-007-2.

  24. High-sensitivity single-grain Si PIN photodiode with thick-silicon and deep doped regions
    A. Arslan; R. Ishihara; C.I.M. Beenakker;
    In 8th International Thin-Film Transistor Conference,
    Lisbon, Portugal, Jan. 2012.

  25. Single-Grain Germanium TFTs
    R. Ishihara; T. Chen; A. Baiano; M.R. Tajari Mofrad; C.I.M. Beenakker;
    In Y. Kuo; G. Bersuker (Ed.), ECS Transactions: Challenges Si- and Ge-based TFT Technology,
    Hong Kong, China, pp. 65-74, Jun. 2012. DOI 10.1149/1.3600725.

  26. Flexible system for real-time plasma decapsulation of copper wire bonded IC packages
    Jiaqi Tang; J.B.J. Schelen; C.I.M. Beenakker;
    In 62nd IEEE Electronic Components and Technology Conference (ECTC 2012),
    San Diego, US, pp. 1764-1769, May 2012. ISBN 978-1-4673-1966-9; DOI 10.1109/ECTC.2012.6249076.

  27. Low-temperature bottom-up integration of carbon nanotubes for vertical interconnects in monolithic 3D integrated circuits
    S. Vollebregt; R. Ishihara; J. van der Cingel; C.I.M. Beenakker;
    In 3rd IEEE International 3D Systems Integration Conference (3DIC 2011),
    Osaka, Japan, Jan. 2012. DOI 10.1109/3DIC.2012.6262989.

  28. Contact resistance of low-temperature carbon nanotube vertical interconnects
    S. Vollebregt; A.N. Chiaramonti; R. Ishihara; H. Schellevis; C.I.M. Beenakker;
    In K. Jiang (Ed.), 2012 12th IEEE Conference on Nanotechnology (IEEE-NANO),
    Birmingham, UK, Aug. 2012. ISBN 978-1-4673-2198-3; DOI 10.1109/NANO.2012.6321985.

  29. Monolithic 3D- ICs with Single Grain Si Thin Film Transistors
    R. Ishihara; M. R. T. Mofrad; J. Derakhshandeh; N. Golshani; C. I. M. Beenakker;
    In IEEE 11th International Conference on Solid-State and Integrated Circuit Technology,
    2012.

  30. Excimer laser crystallization of InGaZnO4 on SiO2 substrate
    T. Chen; M.Y. Wu; R. Ishihara; K. Nomura; T. Kamiya; H. Hosono; C.I.M Beenakker;
    Journal of Materials Science: Materials Electronics,
    Volume 22, pp. 1694-1696, 2011. DOI 10.1007/s10854-011-0347-4.

  31. Hot carrier effect and tunneling effect of location- and orientation-controlled (100)- and (110)-oriented single-grain Si TFTs without seed substrate
    T. Chen; R. Ishihara; C.I.M. Beenakker;
    IEEE Transactions on Electron Devices,
    Volume 58, Issue 1, pp. 216-223, 2011. DOI 10.1109/TED.2010.2084089.

  32. Monolithic 3-D integration of SRAM and image sensor using two layers of single-grain silicon
    J.Derakhshandeh; N.Golshani; R. Ishihara; M.R. Tajari Mofrad; M. Robertson; T. Morrison; C.I.M. Beenakker;
    IEEE Transactions on Electron Devices,
    pp. 3954-3961, 2011.

  33. Monolithic 3D Integration of SRAM and Image Sensor Using Two Layers of Single Grain Silicon
    Jaber Derakhshandeh; Negin Golshani; Ryoichi Ishihara; Mohammad Reza Tajari Mofrad; Michael Robertson; Thomas Morrison; C.I.M Beenakker;
    IEEE Transactions on Electron Devices,
    Volume 58, Issue 11, pp. 3954-3961, 2011.

  34. Design and fabrication of single grain (SG) TFTs and lateral PIN photodiodes for low dose X-ray detection
    A. Arslan; R. Ishihara; J. Derakhshandeh; C.I.M. Beenakker;
    In Proc. of SPIE Medical Imaging Conference,
    Lake Buena Vista, Orlando, USA, pp. 79614N-1-79614N, Feb. 2011. DOI 10.1117/12.877959.
    document

  35. Electrical characterisation of low temperature aligned carbon nanotubes for vertical interconnects
    S. Vollebregt; R. Ishihara; J. van der Cingel; H. Schellevis; C.I.M. Beenakker;
    In Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011),
    Veldhoven, The Netherlands, Nov. 2011.

  36. Single grain TFTs and lateral photodiodes for large area X-ray detection
    A. Arslan; R. Ishihara; C.I.M. Beenakker;
    In Proc. 2011 International Image Sensor Workshop (IISW),
    Hokkaido, Japan, pp. 301-304., Jun. 2011.

  37. Monolithic 3D-ICs with single grain Si thin film transistors
    R. Ishihara; N. Golshani; J. Derakhshandeh; M.R. Tajari Mofrad; C.I.M. Beenakker;
    In Proc. 12th International Conference on Ultimate Integration on Silicon (ULIS),
    Cork, Ireland, pp. 1-4, Mar. 2011. ISBN 978-1-4577-0090-3; DOI 10.1109/ULIS.2011.5758004.

  38. Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology
    S. Vollebregt; R. Ishihara; J. J. Derakhshandeh. van der Cingel; H. Schellevis; C.I.M. Beenakker;
    In Proc. 11th IEEE International Conference on Nanotechnology (NANO 2011),
    Portland, OR, pp. 985-990, Aug. 2011.

  39. Single-grain Si TFTs for high-speed flexible electronics
    R. Ishihara; T. Chen; M. van der Zwan; M. He; H. Schellevis; C.I.M. Beenakker;
    In K. Blankenbach; L.C. Chien (Ed.), Proc. of SPIE: Advances Display Technologies and E-papers and Flexible Displays,
    San Francisco, CA, SPIE, Jan. 2011. ISBN 9780819484932; DOI 10.1117/12.876649.

  40. Plasma etching for failure analysis of integrated circuit packages
    Jiaqi Tang; J.B.J. Schelen; C.I.M. Beenakker;
    In ECS Transactions: China Semiconductor Technology International Conference 2011 (CSTIC 2011),
    Shanghai, China, pp. 913-918, Mar. 2011. ISSN 1938-5862; DOI 10.1149/1.3567691.

  41. Patterned aligned carbon nanotubes for vertical interconnects in 3D integrated TFT circuits
    S. Vollebregt; R. Ishihara; J. J. Derakhshandeh. van der Cingel; W.H.A. Wien; C.I.M. Beenakker;
    In 7th International Thin-Film Transistor Conference,
    Cambridge, United Kingdom, Mar. 2011.

  42. Plasma decapsulation of plastic IC packages with copper wire bonds for failure analysis
    Jiaqi Tang; H. Ye; J.B.J. Schelen; C.I.M. Beenakker;
    In Proc. 12th International Conference on Electronics Packaging Technology & High Density Packaging (ICEPT-HDP 2011),
    Shanghai, China, pp. 888-892, Aug. 2011. ISBN 978-1-4577-1768-0; DOI 10.1109/ICEPT.2011.6066972.

  43. Single-grain Si TFTs using spin-coated liquid-silicon
    Jin Zhang; R. Ishihara; H. Tagagishi; R. Kawajiri; T. Shimoda. C.I.M. Beenakker;
    In 2011 International Electron Device Meeting (IEDM 2011),
    Washington, DC, USA, pp. 14.5.1-14.5.4, Dec. 2011. ISBN 978-1-4577-0505-2; DOI 10.1109/IEDM.2011.6131553.

  44. Growth of high density aligned carbon nanotubes using palladium as catalyst
    S. Vollebregt; J. Derakhshandeh; R. Ishihara; M. Y. Wu; C. I. M. Beenakker;
    Journal of Electronic Materials,
    Volume 39, Issue 4, pp. 371-375, 2010.

  45. High speed 6T SRAM cells using single grain TFTs fabricated by ""angstrom""""micro""-Czochralski-Czochralski process at low temperature
    Negin Golshani; Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    Japanese Journal of Applied Physics (JJAP),
    2010.

  46. High Performance Single Grain Si- TFT X-ray Image Sensors
    A. Arslan; R. Ishihara; C.I.M. Beenakker;
    In Semiconductor Advances for Future Electronics Workshop (SAFE),
    Veldhoven, The Netherlands, Nov. 2010.

  47. Single-grain Si TFTs with high performance surpassing SOI-TFTs
    R. Ishihara; T. Chen; C.I.M. Beenakker;
    In Proceedings of International Meeting on Information Display,
    2010.

  48. Patterned growth of carbon nanotubes for vertical interconnect in 3D integrated circuits
    S. Vollebregt; R. Ishihara; J. Derakhshandeh; W. Wien; J. van der Cingel; C.E.M. Beenakker;
    In Proc. of SAFE 2010,
    pp. 184-187, 2010.

  49. Monolithic 3D Integration of SRAM and Image Sensor Using Two Layers of Single Grain Silicon
    Negin Golshani; Jaber Derakhshandeh; Ryoichi Ishihara; C.I.M Beenakker; Michael Robertson; Thomas Morrison;
    In IEEE International Conference on 3D System Integration,
    Munich, Germany, 2010.

  50. Low Subthreshold Slope and High Mobility Single Grain Silicon TFTs Using Grown Oxide
    Negin Golshani; Jaber Derakhshandeh; Shu Yi Liu; Ryoichi Ishihara; J. Van der Cingel; C.I.M Beenakker;
    In EMRS,
    2010.

  51. Direct observation of the electrical activity of coincidence-site lattice boundaries in location-controlled silicon islands using scanning spread resistance microscopy
    N. Matsuki; R. Ishihara; C.I.M. Beenakker;
    Journal of the society for information display,
    Volume 17, Issue 3, pp. 293-297, 2009.

  52. Stacking of Single-Grain Thin-Film Transistors.
    M.R. Tajari Mofrad; J. Derakhshandeh; R. Ishihara; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
    Japanese journal of applied physics,
    Volume 48, 2009. ISSN 0021-4922.

  53. Monolithic Stacking of Single-Grain Thin-Film Transistors to realize high performance three dimensional integrated circuits
    M.R Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
    Japanese Journal of Applied Physics,
    Volume 48, 2009.

  54. Strained Single Grain Silicon n- and p-channel Thin Film Transistors by Excimer Laser
    A. Baiano; R. Ishihara; J. van der Cindel; K. Beenakker;
    Accepted IEEE Electron Device Letters,
    2009.

  55. Investigating Low Temperature High Density Aligned Carbon Nanotube and Nanofilament Growth using Palladium as Catalyst
    S. Vollebregt; J. Derakhshandeh; M.Y. Wu; R. Ishihara; C.I.M. Beenakker;
    In SAFE 2009,
    STW, pp. 125-128, 2009.

  56. Comparing Single Grain and Poly silicon Lateral PIN Photodiodes
    Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    In Proceedings of SAFE 2009,
    Veldhoven, Netherlands, 2009.

  57. High speed 6T SRAM cells using single grain TFTs fabricated by ""angstrom""""micro""-Czochralski process at low temperature
    Negin Golshani; Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    In Proceedings of SAFE 2009,
    Veldhoven, Netherlands, 2009.

  58. Growth of high density aligned carbon nanotubes using palladium as catalyst
    S. Vollebregt; J. Derakhshandeh; R. Ishihara; C.I.M. Beenakker;
    In Proceedings of Electronic Material conference 2009,
    USA, 2009.

  59. A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon
    M.R. Tajari Mofrad; A. La Magna; R. Ishihara; J. Derakhshandeh; J. van der Cingel; C.I.M. Beenakker;
    In Proceedings of E-MRS Symposium Q Laser and plasma processing for advanced materials E-MRS,
    pp. 1-4, 2009.
    document

  60. Monolithic 3D-ICs with Single Grain Si TFTs
    R. Ishihara; J. Derakhshandeh; M.R. Tajari Mofrad; T. Chen; C.I.M. Beenakker;
    In Proceedings of Active-Matrix and Flat Panel Displays 2009,
    Tokyo, Japan, 2009.
    document

  61. Fabrication of 6T SRAM cell using single grain TFTs obtained by ""angstrom""""micro""-Czochralski process
    Negin Golshani; R. Ishihara; J. Derakhshandeh; C.I.M Beenakker;
    In Proceedings of Active-Matrix and Flat Panel Displays 2009,
    Nara, Japan, 2009.
    document

  62. Simulation and Experimental study of crystallographic orientation control of 2D location controlled single grain crystalline silicon
    M.R. Tajari Mofrad; R. Ishihara; J. Derakhshandeh; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
    In Proc. of SAFE 2009,
    pp. 185-188, 2009.
    document

  63. Analog and digital output lateral photodiodes fabricated by ""angstrom""""micro""-Czochralski process at low temperature
    J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; C.I.M. Beenakker;
    In Proc. of DRC 2009,
    IEEE, pp. 93-94, 2009.
    document

  64. Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscopy
    N. Matsuki; R. Ishihara; A. Baiano; Y. Hiroshima; S. Inoue; C.I.M. Beenakker;
    In Materials Research Society Symposium Proceedings,
    pp. 94-99, 2009.

  65. Integrated High Performance (100) and (110) Oriented Single-Grain Si TFTs without Seed Substrate
    T. Chen; R. Ishihara; J. van der Cingel; A. Baiano; M.R. Tajari Mofrad; H. Schellevis; C.I.M. Beenakker;
    In International Electron Devices Meeting (IEDM 2009),
    Baltimore, MD, USA: IEEE, pp. 179-182, 2009.
    document

  66. Expitaxially grown (111) oriented Si film on a crystalline InGaO3(ZnO)5 substrate
    T. Chen; M.Y. Wu; T. Kamiya; H. Hosono; C.I.M. Beenakker;
    In AMFPD 09,
    pp. 67-68, 2009.
    document

  67. Single Grain Si TFTs for RF and 3DICs
    R. Ishihara; A. Baiano; T. Chen; J. Derakhshandeh; M.R. Tajari Mofrad; M. Danesh; N. Saputra; J. Long; C.I.M. Beenakker;
    In 2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT),
    Xian, China, 2009.

  68. High Performance n- and p-channel Strained Single Grain Silicon TFTs using Excimer Laser
    A. Baiano; R. Ishihara; K. Beenakker;
    In Mater. Res. Soc. Symp. Proc,
    Warrendale, PA, Materials Research Society, pp. 1-11, 2009.
    document

  69. Single-Grain Si Thin Film Transistors SPICE Model, Analog and RF Circuit Applications
    A. Baiano; M. Danesh; N. Saputra; R. Ishihara; J. Long; W. Metselaar; C.I.M. Beenakker; N. Karaki; Y. Hiroshima; S. Inoue;
    Solid State Electronics,
    Volume 52, Issue 9, pp. 1345-1352, Aug. 2008.

  70. Single-Grain Si TFTs and Circuits Fabricated Through Advanced Excimer-Laser Crystallization
    R. Ishihara; Vikas Rana; Ming He; Y. Hiroshima; S. Inoue; Wim Metselaar; Kees Beenakker;
    Solid State Electronics,
    Volume 52, pp. 353-358, 2008.

  71. Location and Crystallographic Orientation Control of Si Grains Through Combined Metal Induced Lateral Crystallization and micro-Czochralski process
    Chen Tao; Ryoichi Ishihara; J. W .Metselaar; C.I.M Beenakker; Meng-Yue Wu;
    JJAP,
    Volume 47, Issue 3, pp. 1880-1883, 2008.

  72. Formation of Location-Controlled Germanium Grains by Excimer Laser
    A. Baiano; R. Ishihara; J. van d. Cingel; K. Beenakker;
    ECS Transactions Thin Film Transistors,
    Volume 13, Issue 9, Oct. 2008.

  73. Reliability Analysis of Single Grain Si TFT using 2D Simulation
    A. Baiano; J. Tan; R. Ishihara; K. Beenakker;
    ECS Transactions Thin Film Transistors,
    Volume 13, Issue 9, Oct. 2008.

  74. Investigation of Local Electrical Properties of Coincidence-Site-Lattice Boundaries in Location-Controlled Silicon Islands Using Scanning Capacitance Microscopy
    N. Matsuki; R. Ishihara; A. Baiano; K. Beenakker;
    Applied Physics Letters,
    Volume 93, Issue 6, Aug. 2008.

  75. CMP effect on the quality of thin silicon film crystallized by ""angstrom""""micro""-Czochralski process with excimer laser irradiation
    J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; J. van der Cingel; C.I.M Beenakker;
    In The 4th International Thin-Film Transistor Conference ITC 08,
    Seol, Korea, 2008.

  76. Monolithic Three-Dimensional Stacking of Integrated Circuits with a Low-Temperature Process
    Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; Ryoichi Ishihara; Kees Beenakker;
    In Proceedings of SAFE 2008,
    Velhoven, Netherlands, 2008.

  77. Optimizing Chemical Mechanical Polishing process in 3D-IC
    J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; J. Van der Cingel; C.I.M Beenakker;
    In Proceedings of SAFE 2008,
    Velhoven, Netherlands, 2008.
    document

  78. Monolithic Stacking of Single-Grain Thin-Film Transistors
    Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
    In Proceedings of Active-Matrix and Flat Panel Displays 2008,
    Tokyo, Japan, 2008.

  79. 2D Simulation of Hot-Carrier-Induced Degradation and Reliability Analysis for Single Grain Si TFTs
    J. Tan; A. Baiano; R. Ishihara; K. Beenakker;
    In Proceeding of SAFE,
    2008.

  80. Germanium Grains Location Control using ""angstrom""""micro""-Czochralski Process
    A. Baiano; R. Ishihara; J. van d. Cingel; K. Beenakker;
    In Proceeding of SAFE,
    2008.

  81. Monolithic 3D Integration of Single-Grain Si TFTs
    M.R. Tajari Mofrad; R. Ishihara; J. Derakhshandeh; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
    In Material Research Society Symposium Proceedings,1066,A20,2008,MRS Spring Meeting,
    San Francisco, CA, USA, 2008.

  82. Single-Grain Si TFTs for Flexible Electronics and 3D-ICs
    R. Ishihara; A. Baiano; N. Saputra; M. Danesh; N. Matsuki; T. Chen; V. Rana; M. He; J. Long; Y. Hiroshima; N. Karaki; S. Inoue; C.I.M. Beenakker;
    In International TFT Conference,
    Jan. 2008.

  83. Fabrication of Three-Dimensional Inverters Using the ""angstrom""""micro""-Czochralski
    Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
    In European Solid-State Device Research Conference 2008,
    Edinburgh, Scotland, 2008.

  84. Agglomeration of amorphous silicon film with high energy density excimer laser irradiation
    Ming He; Ryoichi Ishihara; Wim Metselaar; Kees Beenakker;
    Thin Solid Films,
    Volume 515, pp. 2872-2878, 2007.

  85. Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the micro-Czochralski (grain filter) process
    R. Ishihara; D. Danciu; F. Tichelaar; M. He; Y. Hiroshima; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    Journal of Crystal Growth,
    Volume 299, Issue 2, pp. 316-321, Feb. 2007.

  86. Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100oC
    Ming He; Ryoichi Ishihara; Ellen J. J. Neihof; Yvonne van Andel; Hugo Schellevis; Wim Metselaar; Kees Beenakker;
    Japanese Journal of Applied Physics,
    Volume 46, Issue 3B, pp. 1245-1249, Mar. 2007.

  87. High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by Micro-Czochralski Process with Capping Layer
    Rana Vikas; Ryoichi Ishihara; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    IEEE Transactions on Electron Devices,
    Volume 54, Issue 1, pp. 124-130, Jan. 2007.

  88. Single-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs
    Ryoichi Ishihara; Vikas Rana; Ming He; Wim Metselaar; Kees Beenakker; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue;
    In Society for Information Display 2007 International Symposium,
    pp. 252-255, 2007.

  89. Local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning spread resistance microscopy
    N. Matsuki; R. Ishihara; A. Baiano; Y. Hiroshima; S. Inoue; C.I.M Beenakker;
    In Proceeding of The 14th International Display Workshops,
    pp. 489-492, 2007.

  90. Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscope
    N. Matsuki; R. Ishihara; A. Baiano; Y. Hiroshima; S. Inoue; C.I.M Beenakker;
    In Proceeding of SAFE,
    2007.

  91. Orientation and Location Controlled Si Grains Through Combined MILC and ""angstrom""""micro""-Czochralski Process
    C. Tao; R. Ishihara; J. W. Metselaar; C. I. M. Beenakker;
    In Proceeding of The 14th International Display Workshops,
    pp. 2011-2012, 2007.

  92. Single-Grain Si Thin-Film Transistors for Analog and RF Circuit Applications
    N. Saputra; M. Danesh; A. Baiano; R. Ishihara; J.R. Long; J.W. Metselaarand; C.I.M. Beenakker; N. Karaki; Y. Hiroshima; S. Inoue;
    In Proceeding of ESSDERC 2007,
    pp. 107-110, 2007.

  93. Preparation of large, location-controlled Si grains by excimer-laser crystallization of a-Si films sputtered at 100oC
    M. He; R Ishihara; C. I. M. Beenakker;
    In Mater. Res. Soc. Proc.,
    2007.

  94. Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy
    V. Nadazdy; V. Rana; R. Ishihara; S. Lanyi; R. Durny; J.W. Metselaar; C.I.M. Beenakker;
    In Mater. Res. Soc. Proc.,
    2007.

  95. DC modeling of Single-Grain Si TFTs using BSIMSOI
    A. Baiano; R. Ishihara; N. Karaki; S. Inoue; W. Metselaar; K. Beenakker;
    In International TFT Conference,
    pp. 200-203, Jan. 2007.

  96. Local electrical properties of coincidence site lattice boundaries in location-controlled silicon islands by scanning capacitance microscopy
    Nobuyuki Matsuki; Ryoichi Ishihara; Chen Tao; Yasushi Hiroshima; J. W .Metselaar; C.I.M Beenakker;
    In AMFPD07,
    pp. 251-253, 2007.

  97. Location and Orientation Control of Si Grains Through Combined MILC and �_-Czochralski process
    Chen Tao; Ryoichi Ishihara; J. W .Metselaar; C.I.M Beenakker;
    In AM-FPD07,
    pp. 271-273, 2007.

  98. Single-grain Si TFTs fabricated at 100oC for microelectronics on a plastic substrate
    M. He; R. Ishihara; C. I. M. Beenakker;
    In 2007 MRS Proceedings: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology,
    2007.

  99. Textured Self-assembled Square-shaped Poly-Si Grains by Multiple Shots Excimer Laser Crystallization
    Ming He; Ryoichi Ishihara; Wim Metselaar; Kees Beenakker;
    Journal of Applied Physics,
    Volume 100, 2006.

  100. Capping Layer on Thin Si Film for mu-Czochralski Process with Excimer Laser Crystallization
    Rana Vikas; Ryoichi Ishihara; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; Wim Metselaar; Kees Beenakker;
    Japanese Journal of Applied Physics,
    Volume 45, Issue 5, pp. 4340-4343, 2006.

  101. A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
    R. Ishihara; A. Glazer; Y. Raab; P. Rusian; M. Dorfan; B. Lavi; I. Leizerson; A. Kishinevsky; Y. van Andel; X. Cao; J. W. Metselaar; C. I. M. Beenakker; S. Stolyarova; Y. Nemirovsky;
    Journal of IEICE,
    Volume E89-C, Issue 10, pp. 136-140, 2006.

  102. Effects of Capping Layer on Grain Growth with mu-Czochralski Process during Excimer Laser Crystallization
    Ming He; Ryoichi Ishihara; Yasushi Hiroshima; Satoshi Inoue; Tatsuya Shimoda; Wim Metselaar; Kees Beenakker;
    Japanese Journal of Applied Physics,
    Volume 45, Issue 1, 2006.

  103. Preferred <100> surface and in-plane orientations in self-assembled poly-Si by multiple excimer-laser irradiation
    M. He; R Ishihara; C. I. M. Beenakker;
    Electrochemical Society Transaction,
    Volume 3, Issue 8, pp. 167-172, Oct. 2006.

  104. Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy
    V. Nadazdy; V. Rana; R. Ishihara; S. Lanyi; R. Durny; J.W. Metselaar; C.I.M. Beenakker;
    In Polycrystalline Thin-Film Silicon Science and Technology,
    2006.
    document

  105. Preparation of Large Poly-Si Grains by Excimer Laser Crystallization of Sputtered a-Si film with Processing Temperature of 100 �C
    M. He; R. Ishihara; E.J.J. Neihof; Y. van Andel; H. Schellevis; C.I.M. Beenakker;
    In Proc. AM-FPD 06,
    2006.
    document

  106. Preparation of large, location-controlled Si grains by excimer laser crystallization of �-Si film sputtered at 100 �C
    M. He; E.J.J. Neihof; Y. van Andel; H. Schellevis; R. Ishihara; J.W. Metselaar; C.I.M. Beenakker;
    In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006,
    2006.
    document

  107. Automated Digital Circuits Design Based on Single-Grain Si TFTs Fabricated Through mu-Czochralski (Grain Filter) Process
    W. Fang; A. van Genderen; R. R. Ishihara Vikas; N. Karaki; Y. Hiroshima; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    In Proc. AM-FPD 06,
    2006.

  108. Preferred <100> Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation
    M. He; R. Ishihara; W. Metselaar; Kees Beenakker;
    In 2006 Joint International Meeting of the Electrochemical Society, Symposium Thin Film Transistors 8 (TFT8),
    Cancun, Mexico, Oct. 2006.
    document

  109. Single-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs
    Ryoichi Ishihara; Vikas Rana; Ming He; Wim Metselaar; Kees Beenakker;
    In 2006 8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT),
    Shanghai, China, pp. 174-177, Oct. 2006.
    document

  110. Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization
    R. Ishihara; M. He; V. Rana; Y. Hiroshima; S. Inoue; T. Shimoda; J.W. Metselaar; C. I. M. Beenakker;
    Thin Solid Films,
    Volume 487, Issue 1-2, pp. 97-101, Sep. 2005.

  111. Dependence of Single-Crystalline Si Thin-Film Transistor Characteristics on the Channel Position inside a Location-Controlled Grain
    V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda; J.W.Metselaar; C. I.M. Beenakker;
    IEEE Transactions on Electron Devices,
    Volume 52, Issue 12, Dec. 2005.

  112. High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by �_-Czochralski Process with Capping Layer
    Rana Vikas; Ryoichi Ishihara; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    In IEDM 2005,
    2005.

  113. A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
    R. Ishihara; A. Glazer; Y. Raab; P. Rusian; M. Dorfan; B. Lavi; I. Leizerson; A. Kishinevsky; Y. van Aandel; X. Cao; J. W. Metselaar; C. I. M. Beenakker; S. Stolyarova; Y. Nemirovsky;
    In IDW05,
    2005.

  114. Capping Layer on Thin Si Film for micro-Czochralski Process with Excimer Laser Crystallization
    R. Vikas; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    In AMLCD05,
    2005.

  115. Phase-Field Modelling of Excimer Laser Lateral Crustallization of Silicon Thin Films
    A. Burtsev; M. Apel; R. Ishihara; C.I.M. Beenakker;
    Thin Solid Films,
    Volume 427, Issue 1-2, pp. 309-313, Mar. 2003.

  116. Advanced excimer-laser crystallization process for single-crystalline thin film transistors
    R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; J.W. Metselaar; C.I.M. Beenakker;
    Thin Solid Films,
    Volume 427, Issue 1-2, pp. 77-85, Mar. 2003.

  117. Single-crystalline Si TFTs fabricated by the µ-Czochralski (grain-filter) process
    Y. Hiroshima; R. Ishihara; V. Rana; D. Abe; S. Inoue; T. DShimoda; J.W. Metselaar; C.I.M. Beenakker;
    In 2003 Int. Workshop on Active-Matrix Liquid-Crystal Displays,
    Tokyo, Japan, pp. 157-158, Jul. 2003.
    document

  118. High-performance TFTs fabricated inside a location-controlled grain by µ-Czochralski (grain-filter) process
    V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Higashi; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    In Proc. 3rd International Meeting on Information Display,
    Deagu, Korea, pp. 1-4, Jul. 2003.
    document

  119. High Performance P-Channel Single-Crystalline Si TFTs Fabricated Inside a Location-Controlled Grain by mu-Czochralski Process
    V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda; J.W. Metselaar; C. I.M. Beenakker;
    In Proc. SAFE 2003,
    Veldhoven, The Netherlands, pp. 639-642, Nov. 2003. ISBN 90-73461-39-1.
    document

  120. Energy Density Window for Location-Controlled Si Grains by Dual-Beam Excimer-Laser
    A. Burtsev; R. Ishihara; C. I. M. Beenakker;
    In Thin Solid Films,
    pp. 199-206, Nov. 2002. ISSN 0040-6090.

  121. Single-Crystalline Si Thin-Film Transistors Fabricated with mu-Czochralski (Grain-Filter) Process
    R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; J.W. Metselaar; C.I.M. Beenakker;
    In M. Matsumura (Ed.), Tech Dig. 2002 Intern. Workshop on Active-Matrix LCDs - TFT Technologies and Rel. Materials,
    Tokyo, Japan, pp. 53-56, Jul. 2002 2002.

  122. DIMES: a success story of microelectronics research, education and industry cooperation
    C.I.M. Beenakker;
    In Proc. International Conference on Microelectronics and Nanotechnology,
    Beijing, China, pp. 11-15, Sep. 2002.

  123. Single-crystalline Si thin film transistors with electron cyclotron resonance plasma enhanced chemical vapor deposited gate SiO2
    R. Ishihara; Y. Hiroshima; D. Abe; B.D. van Dijk; P.Ch. van der Wilt; S. Higashi; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    In Proc. Eurodisplay 2002,
    Nice, France, pp. 407-409, Oct. 2002. ISBN 2-9507804-3-1.

  124. Single-Crystalline Si TFTs Fabricated with Micro-Czochralski (grain-filter) process
    R. Ishihara; B.D. van Dijk; P.Ch. van der Wilt; J.W. Metselaar; C.I.M. Beenakker;
    In Y.B. Kim; I.G. Kang (Ed.), Proc. 2nd International Meeting on Information Display,
    Daegu, Korea, pp. 159-162, Aug. 2002. ISSN 1598-3196.

  125. Location-control of large grains by micro-Czochralski (grain filter) process and its application to single-crystalline silicon thin-film transistors
    R. Ishihara; P.C. van der Wilt; B.D. van Dijk; J.W. Metselaar; C.I.M. Beenakker;
    In Proc. 202nd Meeting of the Electrochemical Societey, Thin Film Transistor Technologies VI,
    pp. 63-74, 2002.

  126. Formation of location-controlled crystalline islands using substrate-embedded-seeds in excimer-laser crystallization of silicon films
    P.Ch. van der Wilt; B.D. van Dijk; G.J. Bertens; R. Ishihara; C.I.M. Beenakker;
    Appl. Phys. Lett.,
    Volume 72, Issue 12, pp. 1819, 2001.

  127. Advanced Excimer-Laser Crystallization Techniques of Si Thin-Film for Location Control of Large Grain on Glass
    R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; F.C. Voogt; G.J. Bertens; J.W. Metselaar; C.I.M. Beenakker;
    In Proc. SPIE Flat Panel Display Technology and Display Metrology II,
    pp. 14-23, 2001.

  128. An Anisotropic U-shape SF6 Based Plasma Silicon Trench Etching Investigation
    A. Burtsev; X.Y. Li; H.W. van Zeijl; C.I.M. Beenakker;
    Microelectronic Engineering,
    Volume 40, pp. 85-97, 1998. ISSN 0167-9317.

  129. Copper Electroplating for Integrated RF Devices
    E. Boelaard; J. N. Burghartz; C.I.M. Beenakker;
    In Proc. SAFE99,
    pp. 733-738, 1998.

  130. Stability of oriented silicalite- 1 films in view of zeolite membrane preparation
    M.J. den Exter; F. Kapteijn; C.J.M. Rijn; H. van Bekkum; J.A. Moulijn; H. Schellevis; C.I.M. Beenakker;
    Zeolites,
    Volume 1997, Issue 19, pp. 13-20, 1997. ISSN: 0144-2449/97.

  131. Random-matrix theory of parametric correlations in the spectra of disordered metals and chaotic billiards
    C.W.J. Beenakker; B. Rejaei;
    Physica A: Statistical and Theoretical Physics,
    Volume 203, Issue 1, pp. 61-90, Feb. 1994.

  132. Exact solution for the distribution of transmission eigenvalues in a disordered wire and comparison with random-matrix theory
    C.W.J. Beenakker; B. Rajaei;
    Phys. Re. B,
    pp. 7499-7510, 1994.

  133. Scaling theory of conduction through a normal-superconductor microbridge
    C.W.J. Beenakker; B. Rejaei; J.A. Melsen;
    Phys. Re. Lett.,
    Volume 72, pp. 2470-2473, 1994.

  134. Single-electron tunneling in the fractional quantum Hall effect regime
    C.W.J. Beenakker; B. Rejaei;
    Physica B: Condensed Matter,
    Volume 189, Issue 1-4, pp. 147-156, Jun. 1993.

  135. Nonlogarithmic repulsion of transmission eigenvalues in a disordered wire
    C.W.J. Beenakker; B. Rejaei;
    Phys. Re. Lett.,
    Volume 71, pp. 3689-3692, 1993.

  136. Vector-mean-field theory of the fractional quantum Hall effect
    B. Rejaei; C.W.J. Beenakker;
    Phys. Re. B,
    Volume 46, pp. 15566-15569, 1992.

  137. Superconductivity in the mean-field anyon gas
    B. Rejaei; C.W.J. Beenakker;
    Phys. Re. B,
    Volume 43, pp. 11392-11395, 1991.

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Last updated: 7 Oct 2020

Kees Beenakker

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