dr.ir. N. Golshani

1. Manufacturing uniform field silicon drift detector using double boron layer
   Negin Golshani; C.I.M Beenakker; Ryoichi Ishihara;
   Nuclear Instruments and Methods in Physics Research Section A,
   Volume 794, pp. 206-214, 2015.

2. High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
   Negin Golshani; Jaber Derakhshandeh; C.I.M. Beenakker; R. Ishihara;
   Solid-State Electronics,
   Volume 105, pp. 6-11, 2015.

3. Development of Silicon Drift Detectors using Boron layer technology
   Negin Golshani;
   PhD thesis, Delft University of Technology, 2015.
   document

4. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications
   Golshani, Negin; Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.;
   APL Materials,
   Volume 2, Issue 10, pp. 100702, 2014.
   document

5. Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics:
   Ryoichi ISHIHARA; Jin ZHANG; Miki TRIFUNOVIC; Jaber DERAKHSHANDEH; Negin GOLSHANI; Daniel M.R. TAJARI MOFRAD; Tao CHEN; Kees BEENAKKER; Tatsuya SHIMODA;
   IEICE Transactions on Electronics,
   Volume E97.C, Issue 4, pp. 227--237, 2014.

6. Robust UV/VUV/EUV PureB Photodiode Detector Technology with High CMOS Compatibility
   L.K. Nanver; L. Qi; V. Mohammadi; K.R.M. Mok; W.B. de Boer; N. Golshani; A. Sammak; T.L.M. Scholtes; A. Gottwald; U. Kroth; F. Scholze;
   Journal of Selected Topics in Quantum Electronics,
   Volume 20, Issue 6, pp. pp.1-11, 2014.

7. Temperature Dependency of the Kinetics of PureB CVD Deposition over Patterned Si/SiO2 Surfaces
   V. Mohammadi; N. Golshani; K.R.C. Mok; W.B. de Boer; J. Derakhshandeh; L.K. Nanver;
   Microelectronic Engineering,
   Volume 125, pp. 45-50, 2014.

8. VUV/Low-Energy-Electron Si Photodiodes with Post-Metal 400�C PureB Deposition
   V. Mohammadi; L. Qi; N. Golshani; K. R. C. Mok; W. B. de Boer; A. Sammak; J. J. Derakhshandeh. van der Cingel; L. K. Nanver;
   IEEE Electron Device Letters,
   Volume 34, Issue 12, 2013. DOI 10.1109/LED.2013.2287221.

9. Investigation of the Issues Arising by Lowering the Deposition Temperature of the PureB-layer on Si/SiO2 Surfaces
   V. Mohammadi; N. Golshani; K.R.C. Mok; W.B. de Boer; J. Derakhshandeh; L.K. Nanver and;
   In ICT.OPEN,
   Eindhoven, The Netherlands, Nov. 2013.

10. High-Ohmic Resistors using Nanometer-Thin Pure-Boron Chemical-Vapour-Deposited Layers
    N. Golshani; V. Mohammadi; S. Ramesh; L.K. Nanver and;
    In ESSDERC 2013,
    2013.

11. A novel silicon interposer for measuring devices requiring complex two-sided contacting
    J. Derakhshandeh; N. Golshani; L.A. Steenweg; W. van der Vlist; L.K. Nanver;
    In IEEE International Conference on Microelectronic Test Structures,
    Osaka, Japan, pp. 43-46, 2013.

12. Silicon Drift Detectors for the detection of x-rays down to energies as low as 100 eV
    Negin Golshani; Jaber Derakhshandeh; Agata Sakic; Lis Nanver;
    In Micronano conference,
    Ede, The Netherlands, 2013.

13. Monolithic 3D-ICs with single grain Si thin film transistors
    R. Ishihara; J. Derakhshandeh; M.R. Tajari Mofrad; T. Chen; N. Golshani; C.I.M. Beenakker;
    Solid-State Electronics,
    Volume 71, pp. 80-87, May 2012. DOI 10.1016/j.sse.2011.10.025.

14. Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices
    L.K. Nanver; A. Sammak; V. Mohammadi; K.R.C. Mok; L. Qi; A. Sakic; N. Golshani; J. Derakhshandeh; T.M.L. Scholtes; W.D. de Boer;
    In ECS Trans. 2012: 27th Symposium on Microelectronics Technology and Devices (SBMicro2012),
    Brazil, Brasilia, pp. 25-33, Aug. 2012. DOI 10.1149/04901.0025ecst.

15. Applications of PureB and PureGaB ultrashallow junction technologies
    L.K. Nanver; A. _akic; V. Mohammadi; J. Derakhshandeh; K.R.C. Mok; L. Qi; N. Golshani; T.M.L. Scholtes; W.B. de Boer;
    In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSCT 2012),
    Xi'an, pp. 303-306., Oct. 2012.
    document

16. Monolithic 3D- ICs with Single Grain Si Thin Film Transistors
    R. Ishihara; M. R. T. Mofrad; J. Derakhshandeh; N. Golshani; C. I. M. Beenakker;
    In IEEE 11th International Conference on Solid-State and Integrated Circuit Technology,
    2012.

17. Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes
    A. Sakic; T.L.M. Scholtes; W. de Boer; N. Golshani; J. Derakhshandeh; L.K. Nanver;
    Materials,
    Volume 4, Issue 12, pp. 2092-2107, Dec. 2011. DOI 10.3390/ma4122092.

18. Monolithic 3D Integration of SRAM and Image Sensor Using Two Layers of Single Grain Silicon
    Jaber Derakhshandeh; Negin Golshani; Ryoichi Ishihara; Mohammad Reza Tajari Mofrad; Michael Robertson; Thomas Morrison; C.I.M Beenakker;
    IEEE Transactions on Electron Devices,
    Volume 58, Issue 11, pp. 3954-3961, 2011.

19. Monolithic 3D-ICs with single grain Si thin film transistors
    R. Ishihara; N. Golshani; J. Derakhshandeh; M.R. Tajari Mofrad; C.I.M. Beenakker;
    In Proc. 12th International Conference on Ultimate Integration on Silicon (ULIS),
    Cork, Ireland, pp. 1-4, Mar. 2011. ISBN 978-1-4577-0090-3; DOI 10.1109/ULIS.2011.5758004.

20. High speed 6T SRAM cells using single grain TFTs fabricated by ""angstrom""""micro""-Czochralski-Czochralski process at low temperature
    Negin Golshani; Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    Japanese Journal of Applied Physics (JJAP),
    2010.

21. The influence of stacking faults on the leakage current of B-layer p+n diodes.
    Golshani; N; W.B. de Boer; T.L.M. Scholtes; A. Sakic; L.K. Nanver;
    In Proceedings of STW-SAFE 2010,
    Veldhoven, Nederland, pp. 81-84, 2010.

22. Monolithic 3D Integration of SRAM and Image Sensor Using Two Layers of Single Grain Silicon
    Negin Golshani; Jaber Derakhshandeh; Ryoichi Ishihara; C.I.M Beenakker; Michael Robertson; Thomas Morrison;
    In IEEE International Conference on 3D System Integration,
    Munich, Germany, 2010.

23. Low Subthreshold Slope and High Mobility Single Grain Silicon TFTs Using Grown Oxide
    Negin Golshani; Jaber Derakhshandeh; Shu Yi Liu; Ryoichi Ishihara; J. Van der Cingel; C.I.M Beenakker;
    In EMRS,
    2010.

24. High speed 6T SRAM cells using single grain TFTs fabricated by ""angstrom""""micro""-Czochralski process at low temperature
    Negin Golshani; Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    In Proceedings of SAFE 2009,
    Veldhoven, Netherlands, 2009.

25. Fabrication of 6T SRAM cell using single grain TFTs obtained by ""angstrom""""micro""-Czochralski process
    Negin Golshani; R. Ishihara; J. Derakhshandeh; C.I.M Beenakker;
    In Proceedings of Active-Matrix and Flat Panel Displays 2009,
    Nara, Japan, 2009.
    document

26. Field Aided Germanium Induced Crystallization of Silicon on glass
    J. Derakhshandeh,��S. Mohajerzadeh; N. Golshani; M.D.Robertson;
    In MRS,
    2003.
    document

27. Current Assisted Germanium Induced Crystallization of amorphous silicon on glass
    J. Derakhshandeh; N. Golshani; S. Mohajerzadeh;
    Journal of Thin Solid Films,
    2002.

28. Low temperature Germanium Induced Crystallization of silicon in the presence of electric current
    J. Derakhshandeh; N. Golshani; S. Mohajerzadeh;
    In EMRS,
    2002.

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