dr. Yue Sun

PhD thesis (Jun 2022): Quasi-vertical gallium nitride diodes for power microwave applications
Promotor: GuoQi Zhang, Willem van Driel

Expertise: GaN Power Diodes; Wafer Level Package; RF Applications

Yue Sun received the B.S. degree in Electrical Engineering from Hebei University of Science and Technology, China in 2015, and the M.S. degree in Mechanical and Electrical Engineering from Guilin University of Electronic Technology, China in 2018. He has substantial experience with system in package (SiP) after participating in Wafer/Panel Fan-out Package projects, as a co-training master student in the National Center of Advanced Packaging (NCAP) from 2016 to 2018.

Yue is currently pursuing a Ph.D. degree in Department of Microelectronics, Delft University of Technology, The Netherlands, with a focus on Gallium Nitride (GaN) RF devices. Since 2018 he is also a co-training student in the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS). His current research interests include vertical GaN devices for high-power RF applications (limiter, detector, rectifier, et al.).

Project:Vertical GaN Diodes for Microwave Power Limiter and Detector

Many modern communication system architectures require that signals be routed from the antenna to the receiver or from the transmitter to the antenna. In the case of electromagnetic pulse (EMP) radiation, front-end components in RF receiver of sensitive equipment are easy to be damaged. A protect limiter can protect these sensitive components in receiver circuit. As a binary III/V wide direct bandgap semiconductor material, Gallium Nitride (GaN) has a variety of excellent intrinsic materials properties such as a large energy band gap, high critical electrical field and high electron saturation velocity than Si. The operation of GaN devices at high voltages, high currents, and high temperatures offers a superior performance for RF functions including high-power control components and high-performance transceivers. The PIN diodes are used extensively in microwave and millimeter wave circuits for amplitude modulation and leveling functions. The main objective within this project is to investigate the high-power RF performance of GaN-based PiN diode.

Last updated: 30 Jun 2022