MSc Jiarui Mo
PhD student
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics Themes: Advanced sensor materials, Micro/Nano System Integration and Reliability
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics Themes: Advanced sensor materials, Micro/Nano System Integration and Reliability
Biography
Jiarui was born in Mianyang, Sichuan, China. He received his B.Sc degree from Chongqing Univerity, China, in 2017, and the M.Sc degree in Electrical Engineering from the Delft University of Technology, Netherland, in 2019. After graduation, he shortly worked in the National Centre for High-Resolution Electron Microscopy.
Since July 2020, he started working as a Ph.D. researcher in the group of Electronic, Components, Technology, and Materials. His main research interest is silicon carbide sensors and electronics for harsh environments
Projects history
Intelligent Reliability 4.0
- A Fully Integrated Sequential Synchronized Switch Harvesting on Capacitors Rectifier Based on Split-Electrode for Piezoelectric Energy Harvesting
Xinling Yue; Jiarui Mo; Zhiyuan Chen; Sten Vollebregt; Guoqi Zhang; Sijun Du;
IEEE Transactions on Power Electronics,
Volume 39, Issue 6, pp. 7643-7653, 2024. DOI: 10.1109/TPEL.2024.3369728 - A high aspect ratio surface micromachined accelerometer based on a SiC-CNT composite material
Jiarui Mo; Shreyas Shankar; Roberto Pezone; Guoqi Zhang; Sten Vollebregt;
Microsystems & Nanoengineering,
Volume 10, Issue 42, 2024. DOI: 10.1038/s41378-024-00672-x - An Analog to Digital Converter in a SiC CMOS Technology for High-temperature Applications
Jiarui Mo; Yunfan Niu; Alexander May; Mathias Rommel; Chiara Rossi; Joost Romijn; Guoqi Zhang; Sten Vollebregt;
Applied Physics Letters,
Volume 124, Issue 15, 2024. DOI: 10.1063/5.0195013 - Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology
Jiarui Mo; Jinglin Li; Alexander May; Mathias Rommel; Sten Vollebregt; Guoqi Zhang;
IEEE Transactions on Electron Devices,
Volume 71, Issue 10, pp. 5881-5887, 2024. DOI: 10.1109/TED.2024.3450828 - Investigating Mechanical Properties of Silicon Carbide Coated Carbon Nanotube Composite at Elevated Temperatures
Jiarui Mo; Gerald J.K. Schaffar; Leiming Du; Verena Maier-Kiener; Daniel Kiener; Sten Vollebregt; Guoqi Zhang;
In IEEE 37th Intl. Conf. on Micro Electro Mechanical Systems (MEMS2024),
2024. DOI: 10.1109/MEMS58180.2024.10439455 - A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology
Jiarui Mo; Jinglin Li; Yaqian Zhang; Joost Romijn; Alexander May; Tobias Erlbacher; Guoqi Zhang; Sten Vollebregt;
IEEE Electron Device Letters,
Volume 44, Issue 6, pp. 995-998, 2023. DOI: 10.1109/LED.2023.3268334 - Design and Characterization of a Data Converter in
a SiC CMOS Technology for Harsh Environment
Sensing Applications
Yunfan Niu; Jiarui Mo; Alexander May; Mathias Rommel; Chiara Rossi; Joost Romijn; Guoqi Zhang; Sten Vollebregt;
In Proc. of IEEE Sensors,
2023. DOI: 10.1109/SENSORS56945.2023.10325061 - Silicon carbide reinforced vertically aligned carbon nanotube composite for harsh environment MEMS
Jiarui Mo; Shreyas Shankar; Guoqi Zhang; Sten Vollebregt;
In IEEE 36th Intl. Conf. on Micro Electro Mechanical Systems (MEMS2023),
2023. DOI: 10.1109/MEMS49605.2023.10052162 - Electromigration-induced local dewetting in Cu films
Yaqian Zhang; Jiarui Mo; Zhen Cui; Sten Vollebregt; GuoQi Zhang;
In Proc. of the IEEE International Interconnect Technology Conference,
2023. DOI: 10.1109/IITC/MAM57687.2023.10154761 - High-performance Silicon Carbide-on-insulator Thermoresistive High-temperature Sensor Up To 750 C
Baoyun Sun; Jiarui Mo; Willem D. van Driel; GuoQi Zhang;
In 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2023),
2023.
document - MOSFET-based And P-N Diode Based Temperature Sensors In A 4H-sSiC CMOS Technology
Jiarui Mo; Jinglin Li; Yaqian Zhang; Alexander May; Tobias Erlbacher; Guoqi Zhang; Sten Vollebregt;
In 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2023),
2023.
document - Silicon Carbide-on-Insulator Thermal-Piezoresistive Resonator for Harsh Environment Application
Baoyun Sun; Jiarui Mo; Hemin Zhang; Henk W. van Zeijl; Willem D. van Driel; GuoQi Zhang;
In IEEE 36th Intl. Conf. on Micro Electro Mechanical Systems (MEMS2023),
2023. DOI: 10.1109/MEMS49605.2023.10052401 - Time Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS technology
Yaqian Zhang; Jiarui Mo; Sten Vollebregt; GuoQi Zhang;
In 24th International Conference on Electronic Packaging Technology (ICEPT),
2023. DOI: 10.1109/ICEPT59018.2023.10492218 - Surface-micromachined Silicon Carbide Pirani Gauges for Harsh Environments
Jiarui Mo; Luke Middelburg; Bruno Morana; H.W. Van Zeijl; Sten Vollebregt; GuoQi Zhang;
IEEE Sensors Letters,
Volume 21, Issue 2, pp. 1350-1358, 2021. DOI: 10.1109/JSEN.2020.3019711
BibTeX support
Last updated: 24 Nov 2023
Jiarui Mo
- +31 15 27 8
- j.mo@tudelft.nl
- Room: LB 01.630
- List of publications
MSc students
- Yunfan Niu
Alumni
- Zhenhua Zhang (2023)